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    onsemi 4N50ZG

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    4N 50ZG Datasheets Context Search

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    4N 50ZG

    Contextual Info: NDD04N50Z N-Channel Power MOSFET 500 V, 2.7 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS RDS on (MAX) @ 1.5 A


    Original     		NDD04N50Z NDD04N50Z/D 4N 50ZG PDF

    4N 50ZG

    Abstract: 50ZG ndd04n50zt4g BFR 965 369AA
    Contextual Info: NDD04N50Z N-Channel Power MOSFET 500 V, 2.7 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS RDS on (MAX) @ 1.5 A


    Original     		NDD04N50Z JESD22-A114) NDD04N50Z/D 4N 50ZG 50ZG ndd04n50zt4g BFR 965 369AA PDF

    4N 50ZG

    Abstract: diode marking code 4n 369D A114 JESD22 NDD04N50ZT4G ndd04n50
    Contextual Info: NDP04N50Z, NDD04N50Z N-Channel Power MOSFET 500 V, 2.7 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant http://onsemi.com ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise noted


    Original     		NDP04N50Z, NDD04N50Z NDD04N50Z/D 4N 50ZG diode marking code 4n 369D A114 JESD22 NDD04N50ZT4G ndd04n50 PDF