4U SOT 23 Search Results

BC137

Abstract: LM3661TL-1.40 G2025 LOW-POWER SILICON PNP ST8500 BC137 800 BCY90 NB021 BCY91 2N85
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 NB023FL NB023FZ 2N4285 2SA987F NB021EV NB021FV NB023EV NB023FV 2SA987E 2SA880 ~~~j~~ 15 20 25 30 35 40 2SA721 2N1223 2S3010 2S3010 2N4937 2N4938 2N4939 2N4940 2N4941 2N4942 2N935 2S3210 2N5110 TIPP32 2S3020

MV2105

Abstract: MMBV2108LT1G
Contextual Info: MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209 Preferred Device Silicon Tuning Diodes These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications. They provide solid−state

SOT23 MARKING code 4W

Abstract: MV2109 MMBV2105L 65t marking diode mv2105 sot-23 297 marking marking 297 sot-23 marking code 4h diode SOT23 65T MMBV2109LT1 equivalent
Contextual Info: MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209 Preferred Device Silicon Tuning Diodes These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications. They provide solid−state

SML-LX15SOC-TR

Abstract: 037J
Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. SM L-LX15SOC-TR RÛ.35 [R0.014] 3 PLS. 3.00 [0.118] 3 lf=2DmA ELECTRO-OPTICAL CHARACTERISTICS Ta =25'G \ N J j PARAMETER MIN PEAK WAVELENGTH \ 1,10 [0,043] 1.90 [0.075] (3 PLS 230 MAX. 2D0 175 150 125 100 75 bU 25 8 SEC. MAX.\

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. S M L - L X 15 H C - T R RÛ.35 ERO.014] 3 PLS. 3.00 [0.118] 3 lf=2DmA ELECTRO-OPTICAL CHARACTERISTICS Ta =25'G \ N } j PARAMETER MIN PEAK WAVELENGTH \ 1,10 [0,043] (3 P L S 1.90 [0.075] 230 MAX. 2D0 175 150 125 100

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. S ML —LX1 5 S U G C - T R RÛ.35 [R0.014] 3 3.00 [0.118] PLS . 3 lf=2DmA ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 T \ N } j PARAMETER MIN PEAK WAVELENGTH \ 1,10 [0,043] (3 1.90 [0.075] PLS 230 MAX. 2D0 175 150 125

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. S M L —L X 15 S I C - T R RÛ.35 [R0.014] 3 3.00 [0.118] PLS . 3 lf=2DmA ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 T \ N J j PARAMETER MIN PEAK WAVELENGTH \ 1,10 [0,043] (3 1.90 [0.075] PLS 230 MAX. 2D0 175 150 125

LM3661TL-1.40

Abstract: motorola MJ480 PN3054 2SC756 PN30 acrian inc MJE2482 MJE2480 MJE5190J MJ480
Contextual Info: POWER SILICON NPN Item Number Part Number I C . 5 10 20 25 30 044C3 80461 044C2 40621 80435 80735 80735 2N6205 2N6205 2N6205 S30•28 40310 40324 80463 SK3041 SK3041 S15·12 AP15·12 ~f~j:A 35 40 80X24 40316 1571·0420 80163 MJE2480 MJE2482 40250Vl 40250Vl

2N4250 motorola

Abstract: bc154 KT501S LOW-POWER SILICON PNP BC313-16
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 20 TMPT956H4 2N5255 2N5256 TMPT812M4 2SA1037KFR 2SA1037KFR MMBA812M6 MMBA812M6 ~~g~~~~~: 25 30 35 . 40 45 50 BC479 2SA733 2SB819 TMPT956H5 2SA493G•TM· Y 2SB435G PN4250 A5T4250 2N4250 MPS4250 D29E7 BC313·1a

transistor Bc 542

Abstract: transistor bc 564 marking EB 202 transistor transistor A 564 Transistors marking WZ PM564 2574 transistor transistor BF 52 SOT-23 marking aeg 883S
Contextual Info: « I TELEFUNKEN ELECTRONIC 17E D 0 *1 2 0 0 ^ O D D ^ S * BF 883 S TT1 IL1 IRUIMIKI1M electronic C ru fta Ttahnofog*« T -3 3 -0 € T Silicon NPN Epitaxial Planar RF Transistor Applications: Video B-class power stages in TV receivers Features: No /?F£-drift dependent of temperature

BF681

Abstract: BF272 BF272A BC116 KT361G BF679 BFR38 KT361E BF509 LOW-POWER SILICON PNP
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 30 ~~~~~ +~~~~~~~EFC BFR38 BFR38 BF516 BF272A BF272A BF272S BF970A BF970A MPS4248 MPS4248 IMBT3905 2SA523A 2N2904 2N2906 PN2904 SF220 NthAmerSemi Semelab NthAmerSemi SGS•Ates NthAmerSemi

Tip300

Abstract: 2SA8140 BCX53 Rohm 2SA8150 rohm 6AE 2SA1358Y MM4006 2SA1358-Y 2SA815 2sb631 hitachi
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M

mv2105

Abstract: marking code 4h diode
Contextual Info: MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209 Silicon Tuning Diodes 6.8–100 pF, 30 Volts Voltage Variable Capacitance Diodes http://onsemi.com These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general

ct 1061

Abstract: marking code 4h diode
Contextual Info: MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209 Silicon Tuning Diodes 6.8−100 pF, 30 Volts Voltage Variable Capacitance Diodes http://onsemi.com These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER SML—LX1 5 S P G C -R P -T R 3.00 C0.118] — H I REV. RÛ.35 [R0.014] 3 PLS. P O L A R IT Y MARK 3.00 [0.118] 3 1 \ N ELECTRO-OPTICAL CHARACTERISTICS Ta =25T } j PARAMETER PEAK WAVE[ENGTH FORWARD V0[TAGE REVERSE VOLTAGE

STi20

Abstract: SK3537
Contextual Info: POWER SILICON NPN Ie Item Number Part Number I C 5 10 15 20 >= 40346V2 40346V2 40346V2 DTL1657 2N3583 SPT3440 MPSU04 MPSU04 DTL1638 2N6721 DTl1648 TRS4926 TRS4926 TRS4926 STI2006 MST20B MST20B STI20 STI205 TRS2006 ~~kJgg8 25 30 2N5662 SK3537 2N6722 2N6722

0134B

Abstract: SML-LX15IIC-TR
Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. S M L - L X 1 5IIC—TR RÛ.35 ERO.014] 3 PLS. P O L A R IT Y MARK 3.00 [0 .118] 3 ELECTRO-OPTICAL CHARACTERISTICS Ta = 2S'C PARAMETER MIN PEAK WAVELENGTH 3 COMMON ANODE !_ 0 ,4 0 REFLOW PROFILE 1,00 [0.0 3 9 ]

BC232A

Abstract: PN544 2SC9410 TD-101 SA2716 LOW-POWER SILICON NPN ZTX223 NA31XH TD101 2MC509
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 20 BC232 ZTX223 TP4384 ZTX330 BFY68 BFY68 TP5449 2MC509 ~~g~g~ 25 30 MPS3704 BSY54 2222 PN5449 2N4383 2N4384 A8T3704 2N5449 ~~~!~~U 35 40 TED1702K 2SC352A ED1402A BC848A D4C31 4C31 ZTX238 TD101 ~g~g~tA 45 50

Contextual Info: UNCONTROLLED DOCUMENT PART NUM BER REV. S M L - L X 1 5 I Y C — R P —TR R Û .3 5 ERO.0 1 4 ] 3 P L S . P O L A R IT Y 3 .0 0 [0 .1 1 8 ] MARK RED 3 1 YELLOW 2 I f = 20mA ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 T PARAMETER MIN TYP PEAK WAVELENGTH MAX

LV2205

Abstract: LV2209 MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MV2101 MV2105 MV2109 MERIT INCH
Contextual Info: MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209 Silicon Tuning Diodes 6.8–100 pF, 30 Volts Voltage Variable Capacitance Diodes http://onsemi.com These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general

MV2104

Abstract: MV2101 MV2111 MV2115 MV2105 MMBV2109
Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode These devices are designed in the popular PLASTIC PACKAGE for high volumerequirements of FM Radio and TV tuning and AFC, general frequency control andtuning applications.They provide solid–state reliability

diode mv2105

Abstract: marking 4U diode On Semiconductor Silicon Tuning MMBV2109LT1 MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 MV2104
Contextual Info: Silicon Tuning Diode MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 These devices are designed in the popular PLASTIC PACKAGE for high volumerequirements of FM Radio and TV tuning and AFC, general frequency control andtuning applications.They provide solid–state reliability in replacement of mechanical tuning

MV2104

Abstract: MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 MV2101 MV2105 MV2108
Contextual Info: ON Semiconductort Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications. They provide solid–state reliability in replacement of mechanical tuning methods.

2y27

Abstract: 132A2 74LVC241 74LVC241D 74LVC241PW
Contextual Info: Philips Semiconductors Product Specification Octal buffer/line driver; 3-state FEATURES • Wide supply voltage range of 1.2 V to 3.6 V • In accordance with JEDEC standard no. 8-1 A. • Inputs accept voltages up to 5.5 V • CMOS low power consumption • Direct interface with TTL levels