5-334 SILICONIX Search Results

DG333

Abstract: JTW 02
Contextual Info: Temic DG333/334 S e m i c o n d u c t o r s Precision Quad SPDT Analog Switches Features • • • • • • • • • • • Benefits ± 22-V Supply Voltage Range TTL and CMOS Compatible Logic Low On-Resistance 17 Q On-Resistance Matched Between Channels (<2 Q)

4136 pc

Contextual Info: Temic DG333/334 S e m i c o n d u c t o r s Precision Quad SPDT Analog Switches Features Benefits Applications • ± 2 2 -V S upply V oltage R ange • T T L and C M O S C om patible Logic • L ow O n-R esistance 17 Q R ail-to-R ail A nalog Signal R ange

DG334

Abstract: om 334
Contextual Info: Temic DG333/334 S e m i c o n d u c t o r s Precision Quad SPDT Analog Switches Features Benefits Applications • ± 22-V S upply Voltage R ange • • A udio Sw itching • T T L and C M O S C om patible Logic • Low O n-R esistance 17 Q • S im ple Logic Interface

SiR470DP

Abstract: S-82146 S82146
Contextual Info: SPICE Device Model SiR470DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Si7880ADP

Contextual Info: SPICE Device Model Si7880ADP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4421DY

Contextual Info: SPICE Device Model Si4421DY Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SiR470DP

Abstract: S-82146 S82146
Contextual Info: SPICE Device Model SiR470DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

MAX334CPE

Contextual Info: y k i y j x i > k i High Speed Quad SPST Analog Sw itch _ Features _ ♦ ♦ Rds ON 500 (max.) Guaranteed Break-Before-Make Switching ♦ Single or Bipolar Supply Operation ♦ CMOS and TTL Logic Compatible + Faster, Lower R0N Replacement for DG201 and

CK408

Abstract: CK-408
Contextual Info: SÌ4480DY Vishay Siliconix N-Channel 80-V D-S MOSFET V d s (V) R DS(ON) (& ) Id M 0.035 @ V GS = 10 V ± 6.0 0.040 @ V QS = 6.0 V ± 5.5 D Q SO-8 <j s Ô s N-Ch an n el M O S F E T liliia y a im fiiiiiiiiH fiá fl PA RA M ETER SYM BOL LIMIT D rain-Source Voltage

2N5196

Abstract: 2N5196-9 2N5198 2N5199 2N5199CHP 2N5545-47 2NS197 U231-35 FET package TO-71
Contextual Info: 2N 5199 2N5198 2N5197 2N5196 B monolithic dual n-channel JFETs designed fo r Siliconix Perform ance Curves N N P See Section 5 . BENEFITS • Minimum System Error and Calibration 5 mV Maximum Offset 2N5196, 97 • Low Drift 5 t iV r C Maximum (2N5196)

Contextual Info: SPICE Device Model SQ4917EY www.vishay.com Vishay Siliconix Dual P-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model SiR470DP www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: . designed for B Siliconix DG161 DG163 Drivers with Differentially Driven Normally Open and Normally Closed FET Switches BENEFITS • • Switching High Frequencies ■ Switching in Satellite Applications Higher Signal Bandwidth Switching Capa­ bilities

Contextual Info: SQ4917EY www.vishay.com Vishay Siliconix Automotive Dual P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 60 RDS(on) () at VGS = - 10 V 0.0480 RDS(on) () at VGS = - 4.5 V 0.0612 ID (A) per leg -8 Configuration

DVD150T

Abstract: DV2810S DV2810W DV2805S DV2805W DV2805Z DV2810Z DV2820S DV2820W DV2820Z
Contextual Info: RF Power FETs Selector Guide RF Power FETs Selector Guide Contd 28 Volt DC — 300 MHz Series Rated Power Out (Watts) @ 28V d c Min. Gain (dB) 28 V, 175 MHz Min. BVq s s dJc (°C/W) Part Number Test Frequency* (MHz) DV2805S DV2805W DV2805Z 175 175 175 5

SI99780W

Abstract: si99780
Contextual Info: SÌ9978DW Vishay Siliconix Configurable H-Bridge Driver FEATURES • • • H-Bridge or Dual Half-Bridge Operation • C ross-Conduction Protected 20- to 40-V Supply • C urrent Limit Static dc Operation • Undervoltage Lockout • ESD Protected • Fault Output

vishay cwr09

Abstract: vishay capacitors cwr09 MIL-C-55365/4 cwr09 CWR09 VISHAY CWR06 MIL-C-55365 roederstein capacitor tantalum cwr09m105
Contextual Info: TYPE CWR09 Solid Tantalum Chip Capacitors Molded, Solid-Electrolyte, Military, MIL-C-55365/4 Qualified FEATURES • Completely interchangeable with CWR06. • Maximum capacitance. • Minimum size. • Weibull Failure Rates B, C, D; Exponential M, P, R, S.

Contextual Info: Temic SÌ4480DY S e m i c o n d u c t o r s N-Channel 80-V Rated MOSFET Product Summary V d s V I d (A ) I*DS(on) ( ß ) 0.035 @ V qS = 10 V ± 6.0 0.040 @ VGS = 6.0 V ± 5.5 80 ,0 * ' SO -8 It . 0 -'I- Top View N-Channe! M O SFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)

4425b

Abstract: V30114-T1 vishay siliconix code marking to-220 marking code 20L sot-23 sot23 to252 footprint wave soldering siliconix an808
Contextual Info: Si4421DY New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.00875 @ VGS = - 4.5 V - 14 0.01075 @ VGS = - 2.5 V - 12 0.0135 @ VGS = - 1.8 V - 11 D TrenchFETr Power MOSFET APPLICATIONS D Game Station

Contextual Info: SQ4917EY www.vishay.com Vishay Siliconix Automotive Dual P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 60 RDS(on) () at VGS = - 10 V 0.0480 RDS(on) () at VGS = - 4.5 V 0.0612 ID (A) per leg -8 Configuration

Contextual Info: SQ4917EY www.vishay.com Vishay Siliconix Automotive Dual P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET power MOSFET -60 RDS(on) (Ω) at VGS = -10 V 0.0480 RDS(on) (Ω) at VGS = -4.5 V 0.0612 ID (A) per leg -8 Configuration

Contextual Info: T em ic TN2410L, VN2406/2410 Series Semiconductors N-Channel Enhancement-Mode MOSFET Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M Product Summary Part Number n S on) M a x (Q ) V GS(th) (V) Id (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D

Contextual Info: Tem ic Si4532DY S e m ic onduc tors Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V D S (V ) N -C h a n n e ) P -C h a n n e ) r DS(on) (£2) I d (A ) 0 .0 6 5 @ V G S = 10 V ± 3 .9 0 .0 9 5 @ V GS = 4 .5 V ± 3 .1 0 .0 8 5 @ V Gs = - 1 0 V

Contextual Info: Temic SÌ4532DY S e m i c o n d u c t o r s Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V) N-Channel 30 P-Channel -30 rDS(on) (Q ) I d (A) 0.065 @ VGs = 10 V ±3.9 0.095 @ VGs = 4.5 V ±3.1 0.085 @ VGS = -10 V ±3.5 0.19 @ VGs = -4.5 V