SSN SOT-23
Abstract: sot-23 ssn L6327 SN7002N PG-SOT-23
Text: SN7002N SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 60 V 5 Ω 0.2 A PG-SOT-23 Drain pin 3 Gate pin1 Source pin 2 Type Pb-free Tape and Reel Information Marking
|
Original
|
PDF
|
SN7002N
PG-SOT-23
L6327:
L6433:
SSN SOT-23
sot-23 ssn
L6327
SN7002N
PG-SOT-23
|
Untitled
Abstract: No abstract text available
Text: SN7002N SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 60 V 5 Ω 0.2 A PG-SOT-23 Drain pin 3 Gate pin1 Source pin 2 Type Pb-free Tape and Reel Information Marking
|
Original
|
PDF
|
SN7002N
PG-SOT-23
SN7002N
PG-SOT-23
L6327:
L6433:
|
marking JM
Abstract: M2 MARKING KRA731U
Text: SEMICONDUCTOR KRA731U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking JM 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark JM KRA731U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
|
Original
|
PDF
|
KRA731U
marking JM
M2 MARKING
KRA731U
|
MARKING JM
Abstract: M2 MARKING KRA731E 5-PIN MARKING JM
Text: SEMICONDUCTOR KRA731E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking JM 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark JM KRA731E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
|
Original
|
PDF
|
KRA731E
MARKING JM
M2 MARKING
KRA731E
5-PIN MARKING JM
|
FSM 28
Abstract: m83536/2-027 IDB04E120 IDP04E120 PG-TO263-3-2 smd code marking 4A
Text: IDB04E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 4 A VF 1.65 V T jmax 150 °C PG-TO263-3-2 • Low forward voltage • Easy paralleling
|
Original
|
PDF
|
IDB04E120
PG-TO263-3-2
D04E120
FSM 28
m83536/2-027
IDB04E120
IDP04E120
PG-TO263-3-2
smd code marking 4A
|
550a
Abstract: smd diode marking 6a PG-TO252-3-1 D06E60
Text: IDD06E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 6 A VF 1.5 V T jmax 175 °C • Low forward voltage • 175°C operating temperature • Easy paralleling
|
Original
|
PDF
|
IDD06E60
IDD06E60
PG-TO252-3-1
D06E60
550a
smd diode marking 6a
PG-TO252-3-1
D06E60
|
DIODE 1000a
Abstract: D15E60 IDP15E60 IEC61249-2-21
Text: IDP15E60 Fast EmCon Diode Product Summary Features VRRM 600 V IF 15 A • Fast recovery VF 1.5 V • Soft switching T jmax 175 °C • 600 V diode technology • Low reverse recovery charge PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant
|
Original
|
PDF
|
IDP15E60
PG-TO220-2
IEC61249-2-21
D15E60
DIODE 1000a
D15E60
IDP15E60
IEC61249-2-21
|
smd diode 46A
Abstract: IDP23E60 IEC61249-2-21 DIODE 1000a PG-TO220-2
Text: IDP23E60 Fast Switching Diode Product Summary Features • 600 V diode technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 23 A VF 1.5 V T jmax 175 °C PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant
|
Original
|
PDF
|
IDP23E60
PG-TO220-2
IEC61249-2-21
D23E60
smd diode 46A
IDP23E60
IEC61249-2-21
DIODE 1000a
PG-TO220-2
|
power Diode 800V 12A
Abstract: D12E120 800A IDP12E120 IEC61249-2-21
Text: IDP12E120 Fast Switching Diode Product Summary Features VRRM • 1200 V diode technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 12 A VF 1.65 V T jmax 150 °C PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant
|
Original
|
PDF
|
IDP12E120
PG-TO220-2
IEC61249-2-21
D12E120
power Diode 800V 12A
D12E120
800A
IDP12E120
IEC61249-2-21
|
D06E60
Abstract: 400v 3a low vf diode diode 400V 6A diode 6a 400v IDB06E60 IDP06E60 PG-TO263-3-2 .6A marking code
Text: IDB06E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 6 A VF 1.5 V T jmax 175 °C PG-TO263-3-2 • Low forward voltage • 175°C operating temperature
|
Original
|
PDF
|
IDB06E60
PG-TO263-3-2
D06E60
D06E60
400v 3a low vf diode
diode 400V 6A
diode 6a 400v
IDB06E60
IDP06E60
PG-TO263-3-2
.6A marking code
|
smd diode 46A
Abstract: IDB23E60 IDP23E60 DIODE 1000a TO-263-3 smd code marking 23a
Text: IDB23E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 23 A VF 1.5 V T jmax 175 °C PG -TO263-3-2 • Low forward voltage • 175°C operating temperature
|
Original
|
PDF
|
IDB23E60
-TO263-3-2
D23E60
smd diode 46A
IDB23E60
IDP23E60
DIODE 1000a
TO-263-3
smd code marking 23a
|
diode MARKING CODE 18A
Abstract: D18E120 IDB18E120 IDP18E120 PG-TO263-3-2 smd diode 36A
Text: IDB18E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 18 A VF 1.65 V T jmax 150 °C PG-TO263-3-2 • Low forward voltage • Easy paralleling
|
Original
|
PDF
|
IDB18E120
PG-TO263-3-2
D18E120
diode MARKING CODE 18A
D18E120
IDB18E120
IDP18E120
PG-TO263-3-2
smd diode 36A
|
Untitled
Abstract: No abstract text available
Text: 3 \ PIN 1 ID BY MARKING 1.000±0.050 L TOP V IEW 0 . 5 5 0 ± 0 . 0 5 0 j_ T 7 A '0.152 R e f J 0.000-0.050—1 Rev. A SID E VIE W PIN #1 IDENTIFICATIO N CHAMFER 0.100X45* BOTTOM VIEW NOTES: 1. A LL DIMENSIONS ARE IN MILLIMETERS, ANGLES ARE IN DEGREES. N IS THE TOTAL NUMBER OF TERMINALS.
|
OCR Scan
|
PDF
|
|
0.05mm
Abstract: No abstract text available
Text: PIN A #1 I D E N T I F I C A T I O N P I N 1 ID BY MARKING TOP VIEW BOTTOM VIEW NOTES: 1. ALL DIMENSIONS ARE IN MILLIMETERS, ANGLES ARE IN DEGREES. N IS THE TOTAL NUMBER OF TERMINALS. 2. MAX PACKAGE WARPAGE IS 0 . 0 5 m m , IS 0 . 0 7 6 0 .5 5 0 ± 0 .0 5 0 ,
|
OCR Scan
|
PDF
|
100X45'
0.05mm
|
|
|
Untitled
Abstract: No abstract text available
Text: II LL 9.52/LP 10.00/GSE 10 Series -¡BHjHBWPB | H -H H I_ _ Printed Circuit Board Terminals / 9.52/10.00/10.16 mm Pitch GSE 10/180 LP 10.00/90 Printed Circuit Board Terminals PW 1ÉÉ jMBWMBB •with . test point 4.6 c 5.25 * 9.525 m NUO O) VDE Technical data
|
OCR Scan
|
PDF
|
52/LP
00/GSE
|
LT 5239 H
Abstract: JHTR2445A Scans-008857 52390
Text: ZD50 INSTRUCTION MANUAL F I C A T LON S S P Z050: rtode jJo in ln ai üu>jpiji, VoiL.age . ;i2 - jMiniinum Output Gurrrent ¡1 j . Max ouim Output .Current_ !; 4' .jtfaxijiui] Output. [^WOI' ! n j ¡Efficiency Typ U ; .l$?ut Volt^s: K-HVS9 i,_ 7. L.j„I.n3_ut_ Current ( i.yp).
|
OCR Scan
|
PDF
|
73/23/EEC)
93/68/EEC)
EN60950.
LT 5239 H
JHTR2445A
Scans-008857
52390
|
XO-53B
Abstract: 19.6608 MHz 100PPM XO-53
Text: 4bE J> VISHAY/ DALE ELECTRONICS •IMiaSb'i GGGS'iMfl b « D E I A COMPANY MODEL XO-53B C lock O scillators OF jM tfT Hybrid C rystal, R esistance W elded M eta l P ackage Low P ro file, 2 5 0 KHz to 6 0 M Hz FEATURES • • • • • • Able to withstand flow soldering
|
OCR Scan
|
PDF
|
XO-53B
XO-53
100PPM)
19.6608 MHz
100PPM
|
Untitled
Abstract: No abstract text available
Text: DO NOT SCALE DIMENS IONS IN THIRD ANGLE METRIC mm PROJECTIO N NOTES: SECTION A A -A PLATING CONNECTOR: CONTACT AREA: 0 ,7 6 //m ACTION A PIN : 0 ,^ u m Au MIN. OVER SnPb 1 ,2 7 /jm MIN. OVER Ni 1 ,2 7 /jm MIN. Ni MIN. PLATING CONNECTOR: CONTACT AREA: 2,qtim Au
|
OCR Scan
|
PDF
|
27yum
|
Untitled
Abstract: No abstract text available
Text: DO NOT SCALE D IM E N S IO N S NOTES: SE C TIO N IN METRIC mm A A -A A A A Ê S A A A A A 11 T H IR D A N G LE P R O J E C T IO N PLATING CONNECTOR: CONTACT AREA: 0,76/^m Au MIN, OVER 1,27jum Ni MIN, ACTION PIN : 0,^m n SnPb MIN. OVER 1,27/jm Ni MIN. REDUCED CROSS-TALK SHIELD,O.^um Sn.Pb.
|
OCR Scan
|
PDF
|
27/4Ti
27/um
27jum
27jjm
27/zm
27//m
SHI0804â
EH-1725-99
|
352152-1 amp
Abstract: SR10 352152-4 Ni marking AMP 352152-4 AMP 352152-4 type B
Text: DO N OT SCALE DIM ENSIONS IN SECTION A 22 AC TI O N — PI N AREA 21 PROJECTION NOTES: A -A •1 0 x 4 , 0 = 4 0 , 0 4,0- METRIC mm 43,9- THIRD ANGLE A A PLATING CONNECTOR: CONTACT AREA: 0 ,7 6 /im ACTION : O .^um MIN. OVER Sn 1 ,27fjm Ni MIN. MIN. OVER 1 ,27/jm
|
OCR Scan
|
PDF
|
76//m
27/im
27//m
EH-1098-96
352152-1 amp
SR10
352152-4
Ni marking
AMP 352152-4
AMP 352152-4 type B
|
NMC9306
Abstract: NMC9306N COP400 M08A NMC9306M8 marking C.S nmc9306e
Text: NMC9306 m jm National Semiconductor NMC9306 256-Bit Serial Electrically Erasable Programmable Memory General Description Features The NMC9306 is a 256-bit non-volatile sequential access memory fabricated using advanced floating gate N-channel E2PROM technology. It is accessed via the simple
|
OCR Scan
|
PDF
|
NMC9306
256-Bit
COP400
tl/d/5029-15
tl/d/5029-16
90C6DI/VN
NMC9306
NMC9306N
M08A
NMC9306M8
marking C.S
nmc9306e
|
TR-NWT-001
Abstract: No abstract text available
Text: DO IN 25 PROJECTION NOTES: A A C T IO N — P IN AREA 4,0- THIRD ANGLE M ETR IC mm SECTION A - A •12 x 4 , 0 = 48 ,0 MAX. SCALE D IM E N S IO N S 49,9- •0,95 NOT PLATING CONNECTOR: A CONTACT AREA: 0,76/jm Au MIN. OVER ACTION O .^um PIN : S nP b ACTION
|
OCR Scan
|
PDF
|
76/jm
27/zm
27-MAR-01
09-NOV-OO
JUL--00
TR-NWT-001
|
4WT49
Abstract: SR10 2mm female connector
Text: DO NOT SCALE D IM E N S IO N S SECTIO N A -A NOTES: A A A A & CO NTACT A R E S H IE L D IN THIRD ANGLE METRIC mm PROJECTION PLATING CONNECTOR: CONTACT AREA: 0 ,7 6 /jm Au MIN. OVER 1,27/^m Ni MIN. ACTION PIN : 0,^urn Sn MIN, OVER 1 ,27/jm Ni MIN. REDUCED CROSS-TALK SHIELD,O.^um Sn
|
OCR Scan
|
PDF
|
76/jm
27//m
27/jm
27/im
EH-1725-99
02-9B
4WT49
SR10
2mm female connector
|
Untitled
Abstract: No abstract text available
Text: jm DC/DC Converters D4 Package ELECTRONICS, INC. GENERAL FEATURES: MOB MAX _L Ultra miniature package Input/output isolated Short circuit protection Line and load regulation Input and output filtering High efficiency and reliability Low cost Single and dual output available
|
OCR Scan
|
PDF
|
14-pin
JBMES00018
DC01-0505-D4
DC01-0509-D4
DC01-0512-D4
DC01-0515-D4
DC01-1205-D4
DC01-1212-D4
DC01-1215-D4
|
