5.1 AMPLIFIER IC Search Results

RFS1003

Abstract: 5850MHZ
Contextual Info: RFS1003 5.1-5.9 GHz U-NII Power Amplifier Product Description Applications The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 GHz frequency band. With a P1dB of 29 dBm, the

Contextual Info: MGA-25203 5.1-5.9GHz 3x3mm WiFi and WiMAX Power Amplifier Data Sheet Description Features Avago Technologies MGA-25203 linear power amplifier is designed for mobile and fixed wireless data applications in the 5.1 to 5.9 GHz frequency ranges. The PA is optimized

MGA-25203

Contextual Info: MGA-25203 5.1-5.9GHz 3x3mm WiFi and WiMAX Power Amplifier Data Sheet Description Features Avago Technologies MGA-25203 linear power amplifier is designed for mobile and fixed wireless data applications in the 5.1 to 5.9 GHz frequency ranges. The PA is optimized

wifi amplifier circuit diagram

Abstract: wifi amplifier circuit MGA-25203 WiFi PA wifi power amplifier circuit 25203 11MHZ avago mga x
Contextual Info: MGA-25203 5.1-5.9GHz 3x3mm WiFi and WiMAX Power Amplifier Preliminary Data Sheet Description Features Avago Technologies MGA-25203 linear power amplifier is designed for mobile and fixed wireless data applications in the 5.1 to 5.9 GHz frequency ranges. The PA is optimized

MGA-25203

Abstract: MGA-25203-BLKG 58GH
Contextual Info: MGA-25203 5.1 - 5.9 GHz WiFi and WiMAX Power Amplifier 3x3mm Data Sheet Description Features Avago Technologies MGA-25203 linear power amplifier is designed for mobile and fixed wireless data applications in the 5.1 to 5.9 GHz frequency ranges. The PA is optimized

53GHZ/512K/533FSB

Contextual Info: MGA-25203 5.1-5.9GHz 3x3mm WiFi and WiMAX Power Amplifier Data Sheet Description Features Avago Technologies MGA-25203 linear power amplifier is designed for mobile and fixed wireless data applications in the 5.1 to 5.9 GHz frequency ranges. The PA is optimized

Contextual Info: RFS1003 5.1-5.9 GHz U-NII Power Amplifier 2 GND N/C VD2 1 GND N/C VD1 The RFS1003 power amplifier is a high-power, highperformance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 GHz frequency band. With a P1dB of 29 dBm, the device is ideal as a

JESD 95-1, SPP-012

Contextual Info: RFS1003 5.1-5.9 GHz U-NII Power Amplifier GND 3 RF IN 4 GND 5 N/C GND 2 VD2 N/C GND 1 VD1 N/C GND Product Description The RFS1003 power amplifier is a high-power, highperformance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 GHz frequency

5.1 audio amplifier board

Abstract: 5.1 surround sound dolby pcb 5.1 audio power amplifier 5.1 audio amplifier pcb 5.1 Channel audio amplifier digital dts dolby 5.1 ic LED Panel Display Signal Theory 5.1channel amplifier Lip Sync Delay ICs MAS3530H
Contextual Info: SYSTEM SOLUTION Digital 5.1 Audio Reference Design “Arena” Sept/2004 Digital 5.1 Audio Reference Design “Arena” Close-to-Production Audio Decoder/Amplifier SYSTEM SOLUTION Micronas offers complete system solutions for various Audio Market segments, based

RFSP5031

Contextual Info: Advanced RFSP5031 5.1-5.9 GHz U-NII PA with Linearizer Product Description Applications The RFSP5031 power amplifier with linearizer is a high-performance GaAs HBT IC designed for use in transmit applications in the 5.1-5.9 GHz frequency band. With a P1dB of 26

Contextual Info: 2SC4707 SILICON NPN EPITAXIAL TYPE LOW FREQUENCY AMPLIFIER APPLICATIONS. Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. 5.1 MAX SWITCHING APPLICATIONS. . Excellent hFE Linearity : h F E 2 = 3 5 (Min.), (VCE=2V, IC=300mA) . Complementary to 2SA1811 MAXIMUM RATINGS (Ta=25°C)

SC1959

Abstract: 2SC1959
Contextual Info: TOSHIBA TRANSISTOR. SEM ICONDUCTOR T O SH IB A TECHNICAL 2 S C 1 959 DATA SILICON PNP EPITAXIAL TYPE PCT PROCESS (2 SC 1959) Unit in mm AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS . 5.1 MAX.

2SA817A

Abstract: 2SC1627A
Contextual Info: 2SA817A TOSHIBA 2SA817A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONS • • 5.1 MAX. Complementary to 2SC1627A. Driver Stage Application of 30 to 35 Watts Amplifiers.

Contextual Info: 2SA817A TOSHIBA 2SA817A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. • • 5.1 MAX Complementary to 2SC1627A. Driver Stage Application of 30 to 35 Watts Amplifiers.

A965

Abstract: 2SA965 2SC2235
Contextual Info: 2SA965 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA965 Unit in mm POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • 5.1 MAX Complementary to 2SC2235. MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage

HMC408LP3

Abstract: HMC408 HMC415 FDC6323L HMC314 HMC326MS8G HMC327MS8G HMC406MS8G HMC407MS8G HMC413QS16G
Contextual Info: v00.0103 HMC408LP3 PRODUCT NOTE A Simple CMOS Power Control Circuit for The HMC408LP3 Amplifier General Description The HMC408LP3 is a 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor HBT Power Amplifier MMIC, which offers +30 dBm P1dB.

toshiba 2sa965 audio power amplifier

Abstract: 2SA965 2SC2235
Contextual Info: TOSHIBA 2SC2235 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2235 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. 5.1 M AX DRIVER STAGE AMPLIFIER APPLICATIONS. • Complementary to 2SA965. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

2SA965

Abstract: 2SC2235
Contextual Info: TOSHIBA 2SA965 2SA965 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • 5.1 M AX Complementary to 2SC2235. MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage

2SC1627A

Abstract: 2SA817A 2SA817A transistor
Contextual Info: TOSHIBA 2SC1627A 2SC1627A TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. 5.1 MAX. VOLTAGE AMPLIFIER APPLICATIONS. • • Complementary to 2SA817A. Driver Stage Application of 30 to 35 Watts Amplifiers.

2SK30ATM 0

Abstract: 2SK30ATM TOSHIBA 2SK30ATM
Contextual Info: TO SH IB A 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS U nit in mm . 5.1 M AX. • High Breakdown Voltage : V Gj g = —50 V

2SK30A

Abstract: 2SK30ATM 2SK30ATM Y 2SK30ATM 0 TOSHIBA 2SK30ATM
Contextual Info: TO SH IB A 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS U nit in mm . 5.1 M AX. High Breakdown Voltage : V Gj g = —50 V

2SA965

Abstract: 2SC2235
Contextual Info: TO SH IBA 2SC2235 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2235 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. 5.1 MAX DRIVER STAGE AMPLIFIER APPLICATIONS. • Complementary to 2SA965. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

toshiba 2sa965 audio power amplifier

Abstract: toshiba audio power amplifier 2SA965 2SC2235 transistor 2sC2235 0058669
Contextual Info: TO SH IBA 2SC2235 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2235 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS 5.1 MAX. DRIVER STAGE AMPLIFIER APPLICATIONS • Complementary to 2SA965. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

2SA817A

Abstract: 2SC1627A
Contextual Info: 2SA817A TO SH IBA 2SA817A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. • • 5.1 MAX Complementary to 2SC1627A. Driver Stage Application of 30 to 35 Watts Amplifiers.