5.8A, 25V, N CHANNEL MOSFET Search Results

GSS4936

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/10/31 REVISED DATE : GSS4936 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 25V 37m 5.8A Description The GSS4936 provide the designer with the best combination of fast switching, ruggedized device design, ultra

ap4936gm

Contextual Info: AP4936GM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D2 ▼ Simple Drive Requirement D1 D1 ▼ Fast Switching 25V RDS ON 37mΩ ID G2 ▼ RoHS Compliant BVDSS 5.8A S2 G1 SO-8 S1 Description

4560r

Abstract: mosfet 4812 PJ4812 SOIC-08
Contextual Info: PJ4812 25V Dual N-Channel Enhancement Mode MOSFET SOIC-08 FEATURES • RDS ON , VGS@10V,IDS@5.8A=15mΩ • RDS(ON), VGS@4.5V,IDS@4.7A=24mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters

d237m

Abstract: ap4936m
Contextual Info: AP4936M Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D2 ▼ Simple Drive Requirement D1 D1 ▼ Fast Switching BVDSS 25V RDS ON 37mΩ ID 5.8A G2 S2 SO-8 G1 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the

680MJ

Contextual Info: SSFP6N80 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 800V Simple Drive Requirement ID25 = 5.8A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability

BUZ73A equivalent

Abstract: buz73a BUZ73 ta4600 BUZ76A TB334
Contextual Info: BUZ73A Semiconductor Data Sheet 5.8A, 200V, 0.600 Ohm, N-Channel Power MOSFET October 1998 File Number 2263.1 Features • 5.8A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.600Ω (BUZ73 field effect transistor designed for applications such as

smd diode 74a

Abstract: 78 DIODE SMD KRF7319 P-channel Dual MOSFET VGS -25V
Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7319 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit V VDS 30 -30 Continuous Drain Current *5 Ta = 25

Contextual Info: P D - 9 .1 6 0 6 A International IÖ R Rectifier IRF7319 PRELIMINARY HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated N-C H A N N E L M O S F E T 51 □ !

PN channel MOSFET 10A

Contextual Info: PD - 96125 IRF7313QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N- Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 1 8 D1 G1 2

IRF7319

Abstract: 49AA
Contextual Info: International IG R Rectifier P D -9.1606 IRF7319 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fglly Avalanche Rated * -CHANNEL UOSFE* ^ "P -O L D I SI I Gt a r-*- i—.h N-Cti P-Ch

IRF7319

Abstract: 1606a 1606a mosfet 5.8A, 25V, N Channel MOSFET
Contextual Info: PD - 9.1606A IRF7319 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N E L M O S F E T 1 8 2 7 3 6 4 5 D1 D1 N-Ch P-Ch 30V -30V

IRF7319PBF

Abstract: irf MOSFET p-CH
Contextual Info: PD - 95267 IRF7319PbF l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Description

Contextual Info: PD - 95267 IRF7319PbF HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 N-Ch P-Ch 30V -30V VDSS

EIA-541

Abstract: F7101 IRF7101 PN channel MOSFET 10A
Contextual Info: PD - 96125A IRF7313QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N- Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Description

Contextual Info: AUIRF7319Q AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Low On-Resistance Logic Level Gate Drive Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive [Q101] Qualified*

1RF7319

Abstract: IRF7319 IRF7319 0 MOSFET ior 144
Contextual Info: PD - 9.1606A International I R Rectifier IRF7319 HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated N-Ch V dss 30V P-Ch -3 0 V R d S oti 0 . 0 2 9 Q 0 .0 5 8 Î2

AUIRF7319Q

Abstract: 96364B 8763A
Contextual Info: PD - 96364B AUTOMOTIVE MOSFET AUIRF7319Q HEXFET Power MOSFET Features l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Automotive [Q101] Qualified* Lead-Free, RoHS Compliant S1 N-CHANNEL MOSFET

Contextual Info: PD - 96364B AUTOMOTIVE MOSFET AUIRF7319Q HEXFET Power MOSFET Features l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Automotive [Q101] Qualified* Lead-Free, RoHS Compliant S1 N-CHANNEL MOSFET

p-channel 250V 30A power mosfet

Abstract: AUIRF7379Q
Contextual Info: PD - 96366B AUTOMOTIVE MOSFET AUIRF7379Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified

Contextual Info: PD - 96366B AUTOMOTIVE MOSFET AUIRF7379Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified

Contextual Info: AUIRF7379Q AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Logic Level Gate Drive Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified*

Transistor Mosfet N-Ch 30V

Contextual Info: PD - 96111A IRF7379QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free 6   '

Contextual Info: PD - 96111 IRF7379QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 N-CHANNEL MOSFET

Contextual Info: PD - 96366 AUTOMOTIVE MOSFET AUIRF7379Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified