HPM6350IEP
|
|
HPMicro Semiconductor Co Ltd
|
32位RISC-V, 800KB SRAM, 4096位OTP, 128KB BOOT ROM, 24/32768Hz晶体, 2XPI, DRAM, SDIO, 2I2S, PDM, 2PWM, 5定时器, 9UART, USB 2.0 OTG, 百兆以太网, 2CAN, 3ADC, 12位DAC, 108GPIO, AES, SM2/3/4, SHA, TRNG. |
Original |
PDF
|
|
|
|
NCE3050I
|
|
NCEPOWER
|
NCE3050I N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 50A continuous drain current, RDS(ON) less than 11mΩ at VGS=10V, and low gate charge, suitable for power switching and high frequency applications. |
Original |
PDF
|
|
|
|
HPM6350IPA
|
|
HPMicro Semiconductor Co Ltd
|
32位RISC-V, 800KB SRAM, 4096位OTP, 128KB BOOT ROM, 24/32768Hz晶体, 2XPI, 1DRAM, 1SDIO, 2I2S, 2PWM, 5定时器, 9UART, 1USB, 1以太网, 2CAN, 3ADC, 1DAC, 108GPIO, AES/SM2/SM3/SM4/SHA-1/256, 真随机数。 |
Original |
PDF
|
|
|
|
HPM6750IVM
|
|
HPMicro Semiconductor Co Ltd
|
双核32位RISC-V，2MB SRAM，24/32768Hz振荡器，2XPI，DRAM，SD/eMMC，24位RGB，4I2S，4PWM，17UART，2USB，2千兆以太网，3/16位ADC，195GPIO，AES/SM2/SM3/SM4/SHA-1/256，TRNG。 |
Original |
PDF
|
|
|
|
HPM6750IAN
|
|
HPMicro Semiconductor Co Ltd
|
双核32位RISC-V，2MB SRAM，24/32768Hz振荡器，2XPI，DRAM，SD/eMMC，24位RGB，4I2S，4PWM，17UART，2USB，2千兆以太网，3/16位ADC，195GPIO，AES/SM2/SM3/SM4/SHA-1/256，TRNG。 |
Original |
PDF
|
|
|
|
AK6050I
|
|
AK Semiconductor
|
AK6050I N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 50A continuous drain current, RDS(ON) less than 20mΩ at VGS=10V, suitable for power switching and high frequency circuits. |
Original |
PDF
|
|
|
|
HPM6450IAN
|
|
HPMicro Semiconductor Co Ltd
|
双核32位RISC-V，2MB SRAM，24/32768Hz振荡器，2XPI，DRAM，SD/eMMC，24位RGB，4I2S，4PWM，17UART，2USB，2千兆以太网，4CAN，3/16位ADC，195GPIO，AES/SM2/SM3/SM4/SHA-1/256，TRNG。 |
Original |
PDF
|
|
|
|
AK3050I
|
|
AK Semiconductor
|
N-Channel Enhancement Mode Power MOSFET AK3050I with 30V drain-source voltage, 50A continuous drain current, RDS(ON) less than 11mΩ at VGS=10V, low gate charge, and high ESD capability in TO-251 package. |
Original |
PDF
|
|
|
|
AK6050IA
|
|
AK Semiconductor
|
AK6050IA N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 50A continuous drain current, and 20mΩ maximum RDS(ON) at 10V VGS, featuring low gate charge and high ESD capability. |
Original |
PDF
|
|
|
|
NCE6050IA
|
|
NCEPOWER
|
60V, 50A NCE6050IA N-channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 14mΩ at VGS=10V, high density cell design, and excellent thermal performance in TO-251 package. |
Original |
PDF
|
|
|
|
HPM6850IBD
|
|
HPMicro Semiconductor Co Ltd
|
32位RISC-V, 1MB SRAM, 16bit DDR2/DDR3, 2.5D GPU, 4 I2S, 9 UART, 1 USB 2.0 OTG, 1 GbE, 8 CAN, 16bit ADC, 186 GPIO, AES/SM2/SM3/SM4/SHA-1/256, TRNG. |
Original |
PDF
|
|
|
|
HPM6450IVM
|
|
HPMicro Semiconductor Co Ltd
|
双核32位RISC-V，2MB SRAM，24/32768Hz振荡器，2XPI，DRAM，SD/eMMC，24位RGB，4I2S，4PWM，17UART，2USB，2千兆以太网，3/16位ADC，195GPIO，AES/SM2/SM3/SM4/SHA-1/256，TRNG。 |
Original |
PDF
|
|
|
|
HPM6E50IGN
|
|
HPMicro Semiconductor Co Ltd
|
双核32位RISC-V, 2080KB SRAM, 千兆以太网, 4 PWM, 17 UART, 4 ADC, 206 GPIO, AES/SM2/SM3/SM4/SHA-1/256加密。 |
Original |
PDF
|
|
|
HPM6350IEP
