Gps circuit diagram
Abstract: POWER DIVIDER 3GHz
Text: SFC2282-50 ChipClampΤΜ Flip Chip TVS Diode with T-Filter PRELIMINARY PROTECTION PRODUCTS Description Features Flip Chip bidirectional EMI/RFI filter with integrated ESD protection ESD protection to The SFC2282-50 is a low pass T-filter with integrated
|
Original
|
SFC2282-50
10MHz)
100MHz
SFC2282-50
Gps circuit diagram
POWER DIVIDER 3GHz
|
PDF
|
MARKING CODE SMD IC
Abstract: SMD IC CODE EEL
Text: SFC2282-50 ChipClampΤΜ Flip Chip TVS Diode with T-Filter PRELIMINARY PROTECTION PRODUCTS Description Features The SFC2282-50 is a low pass T-filter with integrated TVS diodes. It is designed to provide bidirectional filtering of EMI/RFI signals and electrostatic discharge
|
Original
|
SFC2282-50
SFC2282-50
/-15kV
100MHz
MARKING CODE SMD IC
SMD IC CODE EEL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SFC2282-50 ChipClampΤΜ Flip Chip TVS Diode with T-Filter PRELIMINARY PROTECTION PRODUCTS Description Features The SFC2282-50 is a low pass filter with integrated TVS diodes. It is designed to provide bidirectional filtering of EMI/RFI signals and electrostatic discharge
|
Original
|
SFC2282-50
10MHz)
100MHz
|
PDF
|
diode S4 05
Abstract: smd diode S4 diode smd JS 8 BAP51-02
Text: General purpose PIN diode BAP51 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79 1 CATHODE 2 ANODE
|
Original
|
BAP51
OD523
SC-79
diode S4 05
smd diode S4
diode smd JS 8
BAP51-02
|
PDF
|
BAP51-02
Abstract: smd diode S4 diode S4 05 AS 15 f
Text: LESHAN RADIO COMPANY, LTD. General purpose PIN diode BAP51 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79
|
Original
|
BAP51
OD523
SC-79
BAP51-02
smd diode S4
diode S4 05
AS 15 f
|
PDF
|
diode DB 3 C
Abstract: BAP50 BAP50-02
Text: LESHAN RADIO COMPANY, LTD. General purpose PIN diode BAP50 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79
|
Original
|
BAP50
OD523
SC-79
diode DB 3 C
BAP50
BAP50-02
|
PDF
|
DIODE S4 74
Abstract: BAP50 BAP50-02 diode DB 3 C
Text: General purpose PIN diode BAP50 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79 1 CATHODE 2 ANODE
|
Original
|
BAP50
OD523
SC-79
DIODE S4 74
BAP50
BAP50-02
diode DB 3 C
|
PDF
|
BAV74
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV74 High-speed double diode Product specification Supersedes data of 1999 May 11 2004 Jan 14 Philips Semiconductors Product specification High-speed double diode BAV74 PINNING FEATURES • Small plastic SMD package
|
Original
|
M3D088
BAV74
BAV74
SCA76
R76/04/pp9
|
PDF
|
PMBD6050
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD6050 High-speed diode Product specification Supersedes data of 1999 May 11 2004 Jan 14 Philips Semiconductors Product specification High-speed diode PMBD6050 PINNING FEATURES • Small plastic SMD package
|
Original
|
M3D088
PMBD6050
PMBD6050
SCA76
R76/04/pp10
|
PDF
|
LL103A
Abstract: LL103B LL103C DIODE WITH SOD CASE sod-80 with green band
Text: Formosa MS SMD Schottky Barrier Diode LL103A / B / C List List. 1 Package outline. 2
|
Original
|
LL103A
MIL-STD-750D
METHOD-1051
METHOD-1056
METHOD-4066-2
1000hrs.
METHOD-1038
LL103B
LL103C
DIODE WITH SOD CASE
sod-80 with green band
|
PDF
|
50MT060WHTAPBF
Abstract: E78996 datasheet bridge igbt h bridge application igbt "internal thermistor" E78996 bridge
Text: 50MT060WHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP Warp Speed IGBT , 114 A FEATURES • Generation 4 warp speed IGBT technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMD thermistor (NTC)
|
Original
|
50MT060WHTAPbF
E78996
2002/95/EC
18-Jul-08
50MT060WHTAPBF
E78996 datasheet bridge
igbt h bridge application
igbt "internal thermistor"
E78996 bridge
|
PDF
|
DIODE smd marking A4
Abstract: smd diode code A4 BAV70T SC-75
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BAV70T High-speed double diode Product specification Supersedes data of 1997 Dec 19 2004 Feb 04 Philips Semiconductors Product specification High-speed double diode BAV70T FEATURES PINNING • Very small plastic SMD package
|
Original
|
M3D173
BAV70T
SCA76
R76/03/pp9
DIODE smd marking A4
smd diode code A4
BAV70T
SC-75
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Bulletin I27190 02/05 50MT060WHA 50MT060WHTA "HALF-BRIDGE" IGBT MTP Warp Speed IGBT Features VCES = 600V • Gen. 4 Warp Speed IGBT Technology • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMD Thermistor NTC
|
Original
|
I27190
50MT060WHA
50MT060WHTA
E78996
08-Mar-07
|
PDF
|
diode g4l
Abstract: g4l smd
Text: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE5S4M U n it - m m W e ig h t 0 .3 2 6 g T y p 40V 5A Feature • SM D • Tj=150°C ' SM D ' P r RS m T V ^ V Î / i S B E ' P r r s m R ating ' T j= 1 50 °C 1 H igh Io R a tin g -S m all-R K G
|
OCR Scan
|
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon planar epitaxial high-speed double diode FEATURES • Plastic SMD envelope • High switching speed • General application. BAW56W QUICK REFERENCE DATA SYMBOL CONDITIONS MAX. UNIT Per diode Vr continuous reverse
|
OCR Scan
|
BAW56W
|
PDF
|
Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bRE » bb53R31 D D S b n ? DbT « A P X Philips Semiconductors Product specification Silicon planar epitaxial high-speed double diode FEATURES • Plastic SMD envelope • High switching speed • General application. BAW56W QUICK REFERENCE DATA
|
OCR Scan
|
bb53R31
BAW56W
OT323
|
PDF
|
Untitled
Abstract: No abstract text available
Text: N A UE R bb53R31 OQEbTTl bHl « A P X bRE » PHILIPS/DISCRETE Philips Semiconductors Product specification Silicon planar epitaxial high-speed double diode FEATURES • Plastic SMD envelope • High switching speed BAV99W QUICK REFERENCE DATA SYMBOL CONDITIONS
|
OCR Scan
|
bb53R31
BAV99W
|
PDF
|
DIODE JS.9 smd
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode m tm OUTLINE Package : STO-220 DF40SC4 u^hàLÌ°- M 40V m U nit-m m W eight 1.5g (T y p ) 10.2 DA Feature a • SMD < • Tj=150°C 1Tj=150°C • P rrsm 1 P rrs m Rating SMD 1 High lo Rating -Small-PKG 4.7 m Main Use
|
OCR Scan
|
STO-220
DF40SC4
DIODE JS.9 smd
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product specification P h ilip s Sem iconductors High-speed double diode BAV74 FEATURES DESCRIPTION • Small plastic SMD package The BAV74 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated
|
OCR Scan
|
BAV74
BAV74
MBG446
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode FEATURES • Plastic SMD envelope • High switching speed B A S 16W QUICK REFERENCE DATA SYMBOL MAX. UNIT continuous reverse voltage 75 V V RRM repetitive peak reverse
|
OCR Scan
|
OT323
BAS16W
|
PDF
|
Untitled
Abstract: No abstract text available
Text: bbSB^Bl Philips Semiconductors QQ5H351 T56 BBAPX Preliminary specification Silicon planar epitaxial high-speed switching diode — BAS216 N AUER PHILIPS/DISCRETE FEATURES b?E D QUICK REFERENCE DATA • SMD envelope SYMBOL • High speed vH continuous reverse
|
OCR Scan
|
QQ5H351
BAS216
BAS216
00BM325
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P h ilips Sem iconductors Product specification High-speed diode BAL99 FEATURES DESCRIPTION • Small plastic SMD package The BAL99 is a high-speed switching diode fabrjcaiedin planar technology, and encapsulated in the small plastic SMD SOT23 package. • High switching speed: max. 4 ns
|
OCR Scan
|
BAL99
BAL99
MBG446
|
PDF
|
df20lc30
Abstract: No abstract text available
Text: □ - □ 3 . m n?â Surface Mount Super Fast Recovery Diode Twin Diode O UTLINE D IM E N S IO N S DF20LC30 U nit • mm Package I STO-220 10 9 ±0-9 M 300V 2 0 A >SMD m s 'i'x > trr3 0 n s >SRSÜ >DC/DC > 7 5 ^ * -f-J b (2)@ <D >^BsOAw0 ,^ K H s . FA
|
OCR Scan
|
DF20LC30
STO-220
J515-5
df20lc30
|
PDF
|
10SC4M
Abstract: f10sc4
Text: S /a v M * - K U 7 S W Schottky Barrier Diode - I * O U T LIN E D IM E N S IO N S DF10SC4M U nit • mm P a c k a g e I S T O -2 2 0 10 . 2 ± a : M 40 V 10 A 0 .5 ±a @ Date code ati^i_ 2 Type No. 05 Ö 10SC4M m a Polarity >SMD Il >Tjl50°C >Prrsm t j ^ y ' j I ffiti
|
OCR Scan
|
DF10SC4M
10SC4M
Tjl50
T-74S
J515-5
10SC4M
f10sc4
|
PDF
|
