50 UM PHOTODIODE Search Results
50 UM PHOTODIODE Result Highlights (4)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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OPT101P-JG4 |
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Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 |
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OPT301M |
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Integrated Photodiode and Amplifier In Hermetically Sealed Package 8-TO -55 to 125 |
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OPT101P-J |
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Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 |
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OPT101P |
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Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP 0 to 70 |
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50 UM PHOTODIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: HAMAMATSU CURRENT OUTPUT TYPE MOS LINEAR IMAGE SENSORS S3901, S3904 SERIES TECHNICAL DATA Wide Sensitive Area 2.5mm Pixel Height , High UV Sensitivity, Excellent Photometric Capabilities, Low Power Consumption FEATURES • Wide photosensitive area Pixel pitch : 50|.im (S3901), 25|um (S3904) |
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S3901, S3904 S3901) S3904) S3901 | |
PN 9-140
Abstract: hewlett packard application bulletin 73 HFBR24X4 HFBR-24X4 hp quadrature encoder detector quadrature IC marking jw marking code jw analog
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4447SA4 HFBR-24X4 HFBR-14XX HFBR-14X2 HFBR-14X4 HFBR-24X2 HFBR-24X6 PN 9-140 hewlett packard application bulletin 73 HFBR24X4 hp quadrature encoder detector quadrature IC marking jw marking code jw analog | |
hfbr4411
Abstract: hewlett packard application bulletin 73
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HFBR-24X4 HFBR-14XX HFBR-14X2 HFBR-14X4 HFBR-24X2 HFBR-24X6 hfbr4411 hewlett packard application bulletin 73 | |
Selection guideContextual Info: Selection guide - March 2015 InGaAs Photodiodes Near infrared detectors with low noise and superb frequency characteristics HAMAMATSU PHOTONICS K.K. InGaAs Photodiodes Based on unique, in-house compound semiconductor process technology, Hamamatsu has designed and developed advanced InGaAs photodiodes that feature high speed, high |
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KIRD0005E02 Selection guide | |
Contextual Info: Two-color detector K12729-010K Wide spectral response range: 0.9 to 2.55 m Compact ceramic package The K12729-010K is a two-color detector in a compact ceramic package, covering a wide spectral response range. Like the current K11908-010K, it incorporates two InGaAs PIN photodiodes with different spectral response, along the same optical |
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K12729-010K K12729-010K K11908-010K, B1201, KIRD1129E01 | |
K1190
Abstract: KIRD1116E01 InGaAs InGaAs PIN photodiode Long Wavelength 2.6
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K11908-010K KIRD1116E01 K1190 InGaAs InGaAs PIN photodiode Long Wavelength 2.6 | |
InGaAs pinContextual Info: Two-color detector K11908-010K Two InGaAs PIN PD with different spectral response are arranged one above the other to cover a broad wavelength range The K11908-010K incorporates an InGaAs PIN photodiode cutoff wavelength: λc=1.7 m mounted over a long wavelength |
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K11908-010K K11908-010K KIRD1116E01 InGaAs pin | |
InGaAs pinContextual Info: Two-color detector K11908-010K Two InGaAs PIN PD with different spectral response are arranged one above the other to cover a broad wavelength range The K11908-010K incorporates an InGaAs PIN photodiode cutoff wavelength: λc=1.7 m mounted over a long wavelength |
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K11908-010K K11908-010K KIRD1116E01 InGaAs pin | |
EMCORE APD
Abstract: avalanche photodiode photodiode Avalanche photodiode APD photodiode 25G 2.5G APD APD 1550 nm bare die avalanche Photodiode 300 nm avalanche photodiode oc48 1550 fiber 2.5 bare die receiver avalanche 1550 fiber 2.5
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OC-48, STM-16, OC-48 STM-16 EMCORE APD avalanche photodiode photodiode Avalanche photodiode APD photodiode 25G 2.5G APD APD 1550 nm bare die avalanche Photodiode 300 nm avalanche photodiode oc48 1550 fiber 2.5 bare die receiver avalanche 1550 fiber 2.5 | |
850nm photodiode pigtail 50/125
Abstract: 8300 PD-8300 fiber multi-mode 850 850nm photodiode pigtail pd831
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PD-8300 PD-8300 PD-8310 PD-8320 850nm photodiode pigtail 50/125 8300 fiber multi-mode 850 850nm photodiode pigtail pd831 | |
high power laser diode price list
Abstract: 904nm
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RLT405-10MG, DL-4146-301D, GLP-405-5, GLP-405-10, GLP-405-20, RLDE405-12-6, PLD904-4-T, PLD904-5-T, PLD904-10-T, high power laser diode price list 904nm | |
Contextual Info: InGaAs PIN photodiode arrays G12430 series 16/32/46 element InGaAs array for near IR detection The G12430 series is one-dimensional InGaAs PIN photodiode array in a ceramic DIP dual inline package . It can be used to perform simple spectroscopic analysis. |
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G12430 G12430-016D G12430-032D G12430-046D 40-pin 48-pin 18-pin KIRD1124E01 | |
Contextual Info: BLUE ENHANCED PIN PHOTODIODES SPECIFICATIONS Responsivity: Series Resistance: Part Number 0.20 A/W minimum, 0.28 A/W typical @ 450nm 100i2m axim um m easured by applying +10m A to photodiode and m easuring voltage across anode and cathode Total Area (mm2) |
OCR Scan |
450nm 100i2m 172-12-22-D21 | |
InGaAs apd photodiode
Abstract: photodiode preamplifier AGC 55nm photodiode Avalanche photodiode FU-319SPA-C6 FU-319SPP-C6 STM-16 mitsubishi fu 1.31 ber
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FU-319SPA-C6 FU-319SPP-C6 -33dBm OC-48, STM-16) bS4102T InGaAs apd photodiode photodiode preamplifier AGC 55nm photodiode Avalanche photodiode FU-319SPA-C6 FU-319SPP-C6 STM-16 mitsubishi fu 1.31 ber | |
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InGaAs APD photodiode 1550
Abstract: InGaas PIN photodiode, 1550 inGaAs photodiode 1550 InGaAs apd photodiode InGaAs pin
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1100nm PDINBU045G00A-0-0-01 InGaAs APD photodiode 1550 InGaas PIN photodiode, 1550 inGaAs photodiode 1550 InGaAs apd photodiode InGaAs pin | |
InGaAs PIN photodiode Wavelength .6 to 1.7Contextual Info: InGaAs PIN photodiodes G10899 series Wide spectral response range 0.5 to 1.7 m The G10899 series is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm to 1.7 μm. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 μm to 1.7 μm, the G10899 series has sensitivity extending |
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G10899 SE-171 KIRD1109E01 InGaAs PIN photodiode Wavelength .6 to 1.7 | |
Contextual Info: InGaAs PIN photodiodes G10899 series Wide spectral response range 0.5 to 1.7 m The G10899 series is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm to 1.7 μm. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 μm to 1.7 μm, the G10899 series has sensitivity extending |
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G10899 SE-171 KIRD1109E01 | |
G10899-003K
Abstract: G10899 InGaAs PIN photodiode Wavelength .6 to 1.7
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G10899 G10899-003K G10899-005K G10899: SE-171 KIRD1109E02 G10899-003K InGaAs PIN photodiode Wavelength .6 to 1.7 | |
Contextual Info: InGaAs PIN photodiode arrays G12430 series 16/32/46 element InGaAs array for near IR detection The G12430 series is one-dimensional InGaAs PIN photodiode array in a ceramic DIP dual inline package . It can be used to perform simple spectroscopic analysis. |
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G12430 G12430-016D G12430-032D G12430-046D 40-pin 48-pin 18-pin KIRD1124E02 | |
InGaAs photodiode array chip
Abstract: charge amplifier array G11135 Image Sensors G11135-512DE
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G11135 SE-171 KMIR1018E06 InGaAs photodiode array chip charge amplifier array Image Sensors G11135-512DE | |
G12072-54Contextual Info: InGaAs PIN photodiode with preamp G12072-54 ROSA type, 1.3 m, 10 Gbps Features Applications φ1.25 mm sleeve type ROSA receiver optical sub-assembly 8 gigabit fiber channel 10 gigabit ethernet (LR) High-speed response: 11.3 Gbps SFP + transceiver correspondence |
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G12072-54 SE-171 KIRD1115E01 G12072-54 | |
InGaAs apd photodiode
Abstract: APD Ghz LA 1260 APD-1300 APD 1300 2,5 GHz
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APD-1300 InGaAs apd photodiode APD Ghz LA 1260 APD-1300 APD 1300 2,5 GHz | |
Contextual Info: InGaAs PIN photodiode with preamp G12072-54 ROSA type, 1.3 m, 10 Gbps Features Applications φ1.25 mm sleeve type ROSA receiver optical sub-assembly 8 gigabit fiber channel 10 gigabit ethernet (LR) High-speed response: 11.3 Gbps SFP + transceiver correspondence |
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G12072-54 SE-171 KIRD1115E01 | |
Contextual Info: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range. |
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SAE230NS SAE500NS SAE23 |