50 VOLT 10 AMP SCHOTTKY DIODES Search Results

MYXD30600-10CEN

Abstract: silicon carbide
Contextual Info: SiC Schottky 3 Phase Diode Bridge 600 Volt 10 Amp Hermetic MYXD30600-10CEN y r a in Product Overview Features Benefits • Essentially no switching losses • High voltage 600V isolation • 6 off high current 10A diodes • High temperature 210°C • HMP solder tinned leads available

4amp Schottky diode

Abstract: CSD04060
Contextual Info: Reliability Study The influence of 200° C Junction Temperature Transients on ZERO RECOVERY Schottky Diode Power Cycle Reliability Objective Verification Power cycle testing was performed on a sample of 5 CSD04060 4 amp, 600 volt diodes. The K factor was measured to be

Contextual Info: WILLAS FM120-M+ BAS40x THRU FM1200-M+ SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features SCHOTTKY BARRIER DIODE design, excellent power dissipation offers • Batch process

marking CODE 56

Abstract: marking code pr
Contextual Info: WILLAS SOT-363 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM120-M+ BAT54xxWTHRU FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features SCHOTTKY BARRIER DIODE ARRAYS SOT-363 • Batch process design, excellent power dissipation offers

SOD323 diode schottky code marking 37

Abstract: MIL-STD-19500 FM160MH sod123h
Contextual Info: WILLAS FM120-M+ BAS70WSTHRU FM1200-M+ SOD-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

SOD323 diode schottky code marking 37

Abstract: willas sod123h
Contextual Info: WILLAS FM120-M+ BAS40WSTHRU FM1200-M+ SOD-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better BARRIER

Schottky barrier diode 70v 1 amp

Contextual Info: WILLAS FM120-M+ DAP202UTHRU FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features SWITCHING DIODE • Batch process design, excellent power dissipation offers FEATURES:

IGBT 50 amp 1000 volt

Abstract: Cree SiC MOSFET 12 VOLT 150 AMP smps circuit 24 volt 10 amp smps 10 amp igbt 1000 volt 12 VOLT 2 AMP smps circuit IGBT 50 amp 1200 volt Calculation of major IGBT operating parameters CPWR-AN03 IGBT JUNCTION TEMPERATURE CALCULATION
Contextual Info: APPLICATION NOTE Hard Switched Silicon IGBT’s? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes By Jim Richmond Replacing the Si Ultrafast soft recovery diode used as the freewheeling component in hard switched IGBT applications with a Silicon Carbide SiC Schottky diode

DIODE SOD-323 BAT54

Abstract: SOD323 diode schottky code marking 37
Contextual Info: WILLAS FM120-M+ BAT54:6THRU FM1200-M+ SOD-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse

Contextual Info: WILLAS FM120-M+ BAT4xWSTHRU FM1200-M+ SOD-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features FEATURES • Batch process design, excellent power dissipation offers

marking B7 sod123

Abstract: B7 sod123 sod-123 marking code B7
Contextual Info: WILLAS FM120-M+ BAT54xW THRU FM1200-M+ SOT-323 Plastic-Encapsulate 1.0A SURFACE MOUNT SCHOTTKY BARRIER Diodes RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Features SWITCHING DIODE design, excellent power dissipation offers • Batch process better reverse leakage current and thermal resistance.

schottky diode marking A7 SOD

Contextual Info: WILLAS FM120-M+ THRU DAN217U FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features SWITCHING DIODE • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

Contextual Info: WILLAS FM120-M+ BAS40W-0x THRU FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse

CMSD2004S

Contextual Info: WILLAS FM120-M+ MMBD2004SW THRU SOT-323 Plastic-Encapsulate Diodes FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse

Contextual Info: WILLAS FM120-M+ THRU BAV70DW FM1200-M+ SOT-363 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline SWITCHING DIODE Features • Batch process design, excellent power dissipation offers

74 Z 0-0-71

Abstract: marking code vr marking code 300
Contextual Info: WILLAS FM120-M+ BAS70xTHRU FM1200-M+ SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

ultrafast igbt

Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
Contextual Info: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching

Contextual Info: WILLAS SOT-323 Plastic-Encapsulate Diodes FM120-M+ BAV70W THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline SWITCHING DIODE Features FEATURES • Batch process design, excellent power dissipation offers

MYXDS0600-10AAS

Abstract: silicon carbide
Contextual Info: Silicon Carbide Schottky Diode 600 Volt 10 Amp Hermetic MYXDS0600-10AAS y r a in Product Overview Features Benefits • Essentially no switching losses • High voltage 600V isolation in a small package outline • Higher efficiency • High current 10A • High temperature 210°C

MYXDS0600-10DA0

Abstract: silicon carbide
Contextual Info: Silicon Carbide Schottky Diode 600 Volt 10 Amp Hermetic SMD MYXDS0600-10DA0 y r a in Product Overview Features Benefits • High voltage 600V isolation in a small package outline • Essentially no switching losses • Higher efficiency • High current 10A

MYXDS1200-10ABS

Abstract: silicon carbide
Contextual Info: Silicon Carbide Schottky Diode 1200 Volt 10 Amp Hermetic MYXDS1200-10ABS y r a in Product Overview Features Benefits • High voltage 1200V isolation in a small package outline • Essentially no switching losses • Higher efficiency m i l e r P • Reduction of heat sink requirements

MYXDS0600-03AAS

Abstract: silicon carbide
Contextual Info: Silicon Carbide Schottky Diode 600 Volt 3 Amp Hermetic MYXDS0600-03AAS Product Overview Features y r a in Benefits • Essentially no switching losses • High voltage 600V isolation in a small package outline • Higher efficiency • High current 3A • High temperature 210°C

MYXDS0600-05AAS

Abstract: silicon carbide
Contextual Info: Silicon Carbide Schottky Diode 600 Volt 5 Amp Hermetic MYXDS0600-05AAS y r a in Product Overview Features Benefits • Essentially no switching losses • High voltage 600V isolation in a small package outline • Higher efficiency • High current 5A • High temperature 210°C

U840 diode motorola

Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Contextual Info: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in