50 VOLT POWER SUPPLY Search Results

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts

Contextual Info: Universal +5 Volt Power Supply 110/220 VAC, 50/60 Hz Warranty: 1 year after date of purchase Part #: 701001 Universal +5 Volt Power Supply Safety Approvals Hardware Features DC Output: 5 Volts, 4.0 Amps AC Input: 90 - 264 VAC, 47 - 63 Hz., AC Input current: 1 Arms

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, com mon emitter, class AB linear am plifier applications. • Specified 26 Volt, 960 MHz C haracteristics Output Power = 50 W atts

Contextual Info: HY29F400A 4 Megabit 512Kx8/256Kx16 5 Volt-only Flash Memory KEY FEATURES 5 Volt Read, Program, and Erase – Minimizes system-level power requirements High Performance – Access times as fast as 50 ns Low Power Consumption – 20 mA typical active read current in byte

PSD4862450-3E

Contextual Info: 24 VOLT DC POWER SUPPLY daykin ENCLOSED 50 AMP - ELECTRIC CORPORATION Features Copper wound low tem perature rise transformer Electrostatically shielded transformer AC INPUT 460V 3 PH 60 Hz 2.01 AMPS 24 VOLT DC POWER SUPPLY High quality bridge rectifier N o n -v e n tila te d e n c lo s u re w ith

HY29F800ATT

Abstract: hynix 1.8 memory flash 0x78000
Contextual Info: HY29F800A 8 Megabit 1Mx8/512Kx16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 50 ns n Low Power Consumption – 20 mA typical active read current in byte

BUY60

Abstract: MOTOROLA TRANSISTOR 736
Contextual Info: MOTOROLA The RF Line MRF6414 NPN Silicon RF Power Transistor LIFETIME BUY The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts Minimum Gain = 8.5 dB @ 960 MHz, Class AB

smd transistor a9

Contextual Info: MODEL : TO-SMD SERIES SURFACE MOUNT CLOCK OSCILLATOR 3V~5V LOW POWER O 50. ST A9 00M Hz 50. A9 00M Hz % Super small size % Full ceramic package with metalized surface % Supply voltage 3~5 volt # ELECTRICAL SPECIFICATIONS SMD SERIES "100ppm ("50ppm) ("30ppm)

diode 1n4007

Abstract: motorola rf Power Transistor Motorola 1N4007 1N4007 BD135 MRF6414 transistor rf m 1104
Contextual Info: MOTOROLA Order this document by MRF6414/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts

150 j47

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Pow er Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 50 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4351 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 50 Amp Capability at 110°C Fully Isolated Bridge

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 50 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4351 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 50 Amp Capability at 110°C Fully Isolated Bridge

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 50 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4351 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 50 Amp Capability at 110°C Fully Isolated Bridge

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 50 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4351 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 50 Amp Capability at 110°C Fully Isolated Bridge

Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. 50 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4351 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 50 Amp Capability at 110°C Fully Isolated Bridge

MSK4351

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 50 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4351 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 50 Amp Capability at 110°C Fully Isolated Bridge

P channel 50A IGBT

Abstract: isolated voltage sensor 1mhz diode bridge BY 26 CV MSK4351 IGBT 500V 50A use igbt for 3 phase induction motor Bv 42 transistor
Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. 50 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4351 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 50 Amp Capability at 110°C Fully Isolated Bridge

MSK4351

Abstract: three phase IGBT Bridge driving ic
Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 50 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4351 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 50 Amp Capability at 110°C Fully Isolated Bridge

S25FL

Abstract: S25FL004D
Contextual Info: S25FL Family Serial Peripheral Interface S25FL004D 4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface ADVANCE INFORMATION Distinctive Characteristics ARCHITECTURAL ADVANTAGES PERFORMANCE CHARACTERISTICS „ Single power supply operation „

DCS1800

Abstract: MRFIC0914 MRFIC0917 MRFIC1818 PCS1900 PFP-16 MRFIC0910 Integrated Device Technology, Inc Freq Products
Contextual Info: RF Integrated Power Amplifiers Analog Cellular Supply Volt. Vdc Power Added Efficiency % Min Power Gain dB (Min) Harmonic Output 2fo dBc Pout/Pin dBm (Min) Package Semiconductor Technology 824 – 905 4.8 50 17.8 – 40 30.8/13 PFP–16 LDMOS 824 – 905

P channel 50A IGBT

Abstract: MSK4351 use igbt for 3 phase induction motor
Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 50 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4351 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: MIL-PRF-38534 CERTIFIED 500V, 50 Amp Capability at 110°C

Contextual Info: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY M.S.KENNEDY CORP. 50 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4351 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 50 Amp Capability at 110°C Fully Isolated Bridge

power one 15 volt power supply

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 50 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4351 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: MIL-PRF-38534 CERTIFIED 500V, 50 Amp Capability at 110°C

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 50 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4351 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: MIL-PRF-38534 CERTIFIED 500V, 50 Amp Capability at 110°C