50 ZL 220 Search Results

of IC 9290

Abstract: NE52118 NE52118-T1 S21E transistor c 5287 ca 3140 ic
Contextual Info: L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • NE52118 PACKAGE DIMENSIONS Units in mm HIGH POWER GAIN: GA = 15 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω LOW NOISE: NF = 1.0 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω

Contextual Info: SPECIFICATION Part No. : PC30.07.0100A Product Name : FR4 Penta-band GSM Antenna Feature : High antenna RF efficiency Avg 50% across all bands RoHS compliant SPE-12-8-057/A/ZL Page 1 of 7 I. Introduction This dipole antenna delivers high efficiency, averaging 50% across all bands, in

sav40

Abstract: S-AV40
Contextual Info: S-AV40 TOSHIBA RF POWER AMPLIFIER MODULE S-AV40 FM RF POWER AMPLIFIER MODULE FOR 30W COMMERCIAL VHF RADIO APPLICATIONS ･Power Gain: 34.7 dB Min. ･Total Efficiency: 40% (Min.) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C, IT < 8 A, ZG = ZL = 50Ω) CHARACTERISTICS

7415 ic pin details

Abstract: C10535E NE52118 NE52118-T1
Contextual Info: PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52118 L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω

C10535E

Abstract: NE52318 NE52318-T1 NPN transistor 9418 26364
Contextual Info: PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52318 L to S BAND LOW NOISE, HIGH GAIN AMPLIFIER NPN GaAs HBT FEATURES • Ideal for low noise and high gain amplifier NF = 1.1 dB TYP., Ga = 16 dB TYP., MSG = 18.0 dB TYP. @ f = 2 GHz, VCE = 2.0 V, IC = 3 mA, ZS = ZL = 50 Ω

Contextual Info: PD - 95489 IRF2907ZPbF IRF2907ZS IRF2907ZL AUTOMOTIVE MOSFET Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax TO-220 is available in PbF as a Lead-Free

Contextual Info: PD - 95446 IRL1404ZPbF IRL1404ZS IRL1404ZL AUTOMOTIVE MOSFET Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax TO-220 is available in PbF as Lead-Free

Contextual Info: MITSUBISHI RF POWER MODULE M67785H 0 M 7 m , i T31 - 220-240MHZ, 9.6V, 5W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm PIN : Pin @VCC! VBB ®VCC2 ®Po ®GND : RF INPUT : 1st. DC SUPPLY : BASE BIAS SUPPLY : 2nd. DC SUPPLY : RF OUTPUT : FIN H13 ABSOLUTE MAXIMUM RATINGS Tc = 25 “C unless otherwise noted

Contextual Info: , MITSUBISHI RF POWER MODULE b24*lflET QG175G4 % 3 • M68729 220-24SMHZ, 12.5V, 30W, FM MOBILE RADIO BLOCK DIAGRAM Dimensions in mm OUTLINE DRAWING PIN : Pm : Vcc I : ®VCC 2 : ®PO : ®GND : RF INPUT 1st. DC SUPPLY 2nd. DC SUPPLY RF OUTPUT FIN H2 ABSOLUTE MAXIMUM RATINGS Tc = 25‘C unless otherwise noted

rf power transistor h2

Abstract: M57774
Contextual Info: MITSUBISHI RF POWER MODULE M57774 220-225MHZ, 12.5V, 30W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm PIN : Pin : RF INPUT VCCI : 1st. DC SUPPLY @VCC2 : 2nd. DC SUPPLY @ Po : RF OUTPUT ® GND : FIN H2 ABSOLUTE MAXIMUM RATINGS Tc = 25 “C unless otherwise noted

Contextual Info: MITSUBISHI RF POWER MODULE GG174CH Sb4 • M67748UH 220-225MHZ, 12.5V, 7W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM © ©HH- PIN : © P in RF INPUT © VCCI ® VBB ®VCC2 BASE BIAS SUPPLY 1st. DC SUPPLY ®PO 2nd. DC SUPPLY RF O UTPUT

Contextual Info: MITSUBISHI RF POWER MODULE M67785H 220-240MHZ, 9.6V, 5W, FM PORTABLE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dim ensions in mm 45± 1 2 - R 1 .5 + 0.3 © © in ¥ CD— IK +i Ol 'C 5; 4> 0.4 ± 0.2 5±1 9± 1 9± 1 PIN : 5 ± 1 8 .5 ± 1 © P in ( 3 6 .5

M67712

Abstract: m-67712
Contextual Info: MITSUBISHI RF POWER MODULE M67712 220-225MHZ, 12.5V, 30W, SSB MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm l > PIN : Pin VCC1 ®VBB ©VCC2 ©Po ©GND RF INPUT 1st. DC SUPPLY BASE BIAS SUPPLY 2nd. DC SUPPLY RF OUTPUT FIN ABSOLUTE MAXIMUM RATINGS Tc = 2 5 ‘C unless otherwise noted

NJM7815

Abstract: NJM7805FA NJM7800 NJM7815FA NJM7908 NJM7805A NJM7812FA
Contextual Info: NJM7800 3 • is s m IT y7 ± iz N JM7800 > 'J — X i , m m L tz j e & t¡ 3 »3M S £ # t t î> C u ¥ * u - t C <t ‘J , ?i c t-T o I A « _ t< 7 tÜ * ja (T0-220F) C T fêffl Ï I Í I ■ T -ro ■ it % • » « a « » » !* * * • ■y-—VJI/V-V -y h

Contextual Info: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for

J499

Contextual Info: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for

Contextual Info: PXAC201202FC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz

Contextual Info: MITSUBISHI RF POWER MODULE M67713 220~225MHz, 12.5V, 7W, FM PORTABLE RADIO BLOCK DIAGRAM — Il— — Il— © P IN : 3 Pin RF IN P U T ©VBB BASE BIAS O VCC1 DC S U P P L Y ©Po RF O U T P U T ®GND FIN ABSOLUTE MAXIMUM RATINGS (Tc = 25 T) unless otherwise noted)

Contextual Info: 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55TW-FET Common Gate GENERAL DESCRIPTION The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION

electrolytic capacitor, .1uF

Abstract: electrolytic capacitor, 1uF SIT Static Induction Transistor capacitor 330pF ATC "silicon carbide" FET CHIP transistor 348 Static Induction Transistor SIT "Static Induction Transistor" 425-450MHz static induction transistor
Contextual Info: 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55TW-FET Common Gate The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION

Contextual Info: MITSUBISHI RF POWER MODULE M 6 7 7 2 3 220-225MHZ, 12.5V, 7W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM 45±1 42±1 2 - R 1 . 5 ± 0 .3 ¥ SH r -H © 2 ¡«0.4 ± 0.2 5±1 9±1 9±1 PIN : 5 ± 1 8.5 ± 1 © P in ©VCCI ( 3 6 .5 )

Contextual Info: , „ MITSUBISHI RF POWER MODULE 0017 3 b 0 <Ì2G • M 67712 220-225MHZ, 12.5V, 30W, SSB MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm PIN : P in : RF INPUT VCC1 : 1st. DC SUPPLY @VBB : BASE BIAS SUPPLY ®VCC2 : 2nd. DC SUPPLY ®PO : RF O UTPUT

Contextual Info: MITSUBISHI RF POWER MODULE M67712 220-225MHZ, 12.5V, 30W, SSB MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm PIN : P in : RF INPUT V C C 1 : 1st. DC SUPPLY ® VC C 2 : 2nd. DC SUPPLY ® VC C 3 : 3rd. DC SUPPLY ®PO : RF O UTPUT ® G N D : FIN

436L2

Abstract: BTS436L2 Q67060-S6111-A2 Q67060-S6111-A3 Q67060-S6111-A4
Contextual Info: BTS436L2 Smart High-Side Power Switch One Channel: 38mΩ Status Feedback Product Summary On-state Resistance Operating Voltage Nominal load current Current limitation Package RON Vbb on IL(NOM) IL(SCr) 38mΩ 4.75.41V 9.8A 40A TO 220-5-11 TO-263-5-2 Standard