500 V N CHANNEL MOSFET Search Results

SC-89

Abstract: Si1029X
Contextual Info: Si1029X Vishay Siliconix Complementary N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • •

w20nk50z

Abstract: W20NK50 f20nk50 W20NK b20nk50z P20NK50 STP20NK50Z STF20NK50Z P20NK50Z B20NK50
Contextual Info: STB20NK50Z, STF20NK50Z STP20NK50Z, STW20NK50Z N-channel 500 V, 0.23 Ω, 17 A SuperMESH Power MOSFET Zener - protected TO-220, TO-247, TO-220FP, D2PAK Features Type VDSS RDS on max STB20NK50Z STF20NK50Z STP20NK50Z STW20NK50Z 500 V 500 V 500 V 500 V < 0.27 Ω

SI1029X-T1GE3

Abstract: SC-89 Si1029X
Contextual Info: Si1029X Vishay Siliconix Complementary N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • •

Contextual Info: Vishay Intertechnology, Inc. HIGH-VOLTAGE MOSFETs E SERIES HIGH VOLTAGE 500 V, 600 V, and 650 V Super Junction N-Channel MOSFETs D SERIES HIGH VOLTAGE 400 V, 500 V, and 600 V Stripe Technology N-Channel MOSFETs www.vishay.com V I S H AY I N T E R T E C H N O L O G Y, I N C .

w20nk50z

Abstract: STx20NK50Z W20NK50 b20nk50z STP20NK50Z f20nk50 P20NK50 STF20NK50Z B20NK50 F20NK50Z
Contextual Info: STB20NK50Z, STF20NK50Z STP20NK50Z, STW20NK50Z N-channel 500 V, 0.23 Ω, 17 A SuperMESH Power MOSFET Zener-protected TO-220, TO-247, TO-220FP, D2PAK Features • Type VDSS RDS on max STB20NK50Z STF20NK50Z STP20NK50Z STW20NK50Z 500 V 500 V 500 V 500 V < 0.27 Ω

si1029x

Contextual Info: Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21

si1029x

Contextual Info: Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21

transistor 2432

Abstract: SC-89 Si1029X marking 2432 transistor C 2432 2432 C
Contextual Info: Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21

26nm50

Abstract: MAX220 U26NM50
Contextual Info: STW26NM50 STU26NM50, STU26NM50I N-CHANNEL 500V - 0.10Ω - 26A TO-247,Max220,Max220I Zener-Protected MDmesh Power MOSFET n n n n n TYPE VDSS RDS on ID STW26NM50 STU26NM50 STU26NM50I 500 V 500 V 500 V < 0.120 Ω < 0.120 Ω < 0.120 Ω 30 A 26 A 26 A TYPICAL RDS(on) = 0.10Ω

Contextual Info: Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21

W26NM50

Abstract: 26nm50 MAX220 STU26NM50 STU26NM50I STW26NM50
Contextual Info: STW26NM50 STU26NM50, STU26NM50I N-CHANNEL 500V - 0.10Ω - 26A TO-247,Max220,Max220I Zener-Protected MDmesh Power MOSFET n n n n n TYPE VDSS RDS on ID STW26NM50 STU26NM50 STU26NM50I 500 V 500 V 500 V < 0.120 Ω < 0.120 Ω < 0.120 Ω 30 A 26 A 26 A TYPICAL RDS(on) = 0.10Ω

Contextual Info: FQA13N50CF N-Channel QFET FRFET® MOSFET 500 V, 15 A, 480 mΩ Features Description • 15 A, 500 V, RDS on = 480 mΩ (Max.) @ VGS = 10 V, ID = 7.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar

Contextual Info: Product Overview 2SK4221: Power MOSFET 500 V, 26 A, 240 mOhm Single N-Channel TO-3PB For complete documentation, see the data sheet Product Description 2SK4221 is a 500 V, 26 A, 240 mOhm single N-channel power MOSFET for general purpose switching applications.

22NM50

Abstract: STB22NM50 STB22NM50-1 STP22NM50 STP22NM50FP
Contextual Info: STP22NM50 - STP22NM50FP STB22NM50 - STB22NM50-1 N-CHANNEL 500V - 0.16Ω - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET ADVANCED DATA TYPE VDSS RDS on Rds(on)*Qg ID STP22NM50 STP22NM50FP STB22NM50 STB22NM50-1 500 V 500 V 500 V 500 V <0.215Ω <0.215Ω

Contextual Info: FQB10N50CF N-Channel QFET FRFET® MOSFET 500 V, 10 A, 610 m Features Description • 10 A, 500 V, RDS on = 610 mΩ (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe

fqa13n50c

Abstract: FQA13N50CF_F109
Contextual Info: FQA13N50CF N-Channel QFET FRFET® MOSFET 500 V, 15 A, 48 mΩ Features Description • 15 A, 500 V, RDS on = 48 mΩ (Max.) @ VGS = 10 V, ID = 7.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar

Contextual Info: FQPF13N50CF N-Channel QFET FRFET® MOSFET 500 V, 13 A, 540 mΩ Features Description • 13 A, 500 V, RDS on = 540 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe

Contextual Info: FQB5N50C N-Channel QFET MOSFET 500 V, 5 A, 1.4 Ω Features Description • 5 A, 500 V, RDS on = 1.4 Ω (Max.) @ VGS = 10 V, ID = 2.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced

Contextual Info: FQD6N50C N-Channel QFET MOSFET 500 V, 4.5 A, 1.2 Ω Features Description • 4.5 A, 500 V, RDS on = 1.2 Ω (Max.) @VGS = 10 V, ID = 2.25 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced

DC/AC to DC smps circuit diagram

Abstract: STB5NC50 STB5NC50-1 STP5NC50 STP5NC50FP DSASW003744
Contextual Info: STP5NC50 - STP5NC50FP STB5NC50 - STB5NC50-1 N-CHANNEL 500V - 1.3Ω - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh II MOSFET TYPE STP5NC50 STP5NC50FP STB5NC50 STB5NC50-1 VDSS RDS on ID 500 V 500 V 500 V 500 V < 1.5Ω < 1.5Ω < 1.5Ω < 1.5Ω 5.5A 5.5A 5.5A 5.5A

p11nk50

Abstract: p11nk50zfp B11NK50Z p11nk50z P11NK p11nk5 STB11NK50Z STB11NK50ZT4 STP11NK50Z VDD250
Contextual Info: STB11NK50Z - STP11NK50ZFP STP11NK50Z N-CHANNEL 500V - 0.48Ω - 10A - TO220-TO220FP-D²PAK Zener-Protected SuperMESH MOSFET General features Type VDSS Package RDS on STB11NK50Z 500 V <0.52 Ω STP11NK50Z 500 V <0.52 Ω STP11NK50ZFP 500 V <0.52 Ω ID