500 VOLTS SMPS Search Results

POWER MOSFET Rise Time 1 ns

Abstract: IXZ4DF18N50 S 170 MOSFET DEIC-515 mosfet IDM 200 DEIC515 rf mosfet power amplifier 10UF IXZ318N50 deic 515
Contextual Info: IXZ4DF18N50 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC-515 Driver combined with IXZ318N50 MOSFET Gate driver matched to MOSFET 500 Volts 19 A 0.29 Ohms Features • Isolated substrate − high isolation voltage >2500V − excellent thermal transfer

pnp 500v

Contextual Info: High Voltage Transistors PNP High Voltage Transistors 300 to 500 Volts The Zetex range of 300V to 500V transistors provide optimized high performance PNP specifications in a variety of through hole and surface mount packages. Providing very efficient high voltage operation, these devices are ideally suited to line

NPN VCEO 500V sot23

Abstract: ZTX857 FZT657 ZTX458
Contextual Info: High Voltage Transistors NPN High Voltage Transistors 300 to 500 Volts The Zetex range of 300V to 500V transistors provide optimized high performance NPN specifications in a variety of through hole and surface mount packages. Providing very efficient high voltage operation, these devices are ideally suited to line

AOL1454

Contextual Info: AOL1454 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1454 uses advanced trench technology to provide excellent RDS ON , low gate charge. It is ESD protected. This device is suitable for use as a low side switch in SMPS and general purpose applications.

AOL1454

Abstract: diode 20a 40v
Contextual Info: AOL1454 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1454 uses advanced trench technology to provide excellent RDS ON , low gate charge. It is ESD protected. This device is suitable for use as a low side switch in SMPS and general purpose applications.

Contextual Info: AON7702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AON7702 uses advanced trench technology and design to provide excellent R DS ON with low gate charge. This device is suitable for use in SMPS and general purpose applications. Standard Product

AON7702

Abstract: AON7702L aon77
Contextual Info: AON7702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AON7702/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,

AO4480

Contextual Info: AO4480 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4480 uses advanced trench technology to provide excellent RDS ON , low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applications.

AO4480L

Abstract: AO4480 24 volts smps
Contextual Info: AO4480 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4480/L uses advanced trench technology to provide excellent RDS ON , low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applications.

AO4480

Contextual Info: AO4480 40V N-Channel MOSFET General Description Product Summary The AO4480 uses advanced trench technology to provide excellent RDS ON , low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applications.

Contextual Info: AO4480 40V N-Channel MOSFET General Description Product Summary The AO4480 uses advanced trench technology to provide excellent RDS ON , low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applications.

AON7702

Contextual Info: AON7702 30V N-Channel MOSFET SRFET TM General Description Features SRFETTM AON7702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,

AON7702

Contextual Info: AON7702 30V N-Channel MOSFET SRFET TM General Description Features SRFETTM AON7702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,

sony 134a

Abstract: AO4474 AO4474L smps design
Contextual Info: AO4474 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4474 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product

678D

Abstract: SPRAGUE 678D 678D108M010DM3D 678D338M010EN3D
Contextual Info: Type 678D Vishay Sprague Aluminum Capacitors + 105°C, Miniature, Radial Lead FEATURES • Improved SMPS output capacitors • Highest ripple current ratings per case size • High CV ∆ ESR ≤ 1.3 x initial specified limit. ∆ DCL ≤ 2 x initial specified limit.

AON7400

Abstract: 30v 10a smps Sony 134A
Contextual Info: AON7400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON7400 uses advanced trench technology and design to provide excellent R DS ON with low gate charge. This device is suitable for use in SMPS and general purpose applications. Standard Product

AON7406

Contextual Info: AON7406 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON7406 uses advanced trench technology and design to provide excellent R DS ON with low gate charge. This device is suitable for use in SMPS and general purpose applications. Standard Product

Contextual Info: AON7700 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AON7700 uses advanced trench technology and design to provide excellent R DS ON with low gate charge. This device is suitable for use in SMPS and general purpose applications. Standard Product

Sony 134A

Contextual Info: AO4474 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4474 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product

AO4474L

Abstract: AO4474 RJA34
Contextual Info: AO4474 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4474/L uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.

AO4718L

Abstract: AO4718
Contextual Info: AO4718L 30V N-Channel MOSFET SRFET TM General Description Features SRFET TM The AO4718L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load

aon7700l

Abstract: AON7700 Mosfet AON7700
Contextual Info: AON7700 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AON7700/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load

500a mosfet

Abstract: AO4474
Contextual Info: AO4474 30V N-Channel MOSFET General Description Product Summary The AO4474 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. VDS (V) = 30V

672D

Abstract: sprague 672D 672D227F040EK5D 672D477F025DS5D 672D108H6R3EK5C 672d336h100dm5c 672d127h060ds5c 672D337H020DM5C
Contextual Info: Type 672D Vishay Sprague Aluminum Capacitors + 105°C, Miniature, Radial Lead FEATURES • Original SMPS output capacitors • Minimal ESR change • High ripple current capability PERFORMANCE CHARACTERISTICS Shelf Test: 500 hours @ + 105°C: ∆ CAP ≤ 10% from initial measurement.