500V 100A THYRISTORS Search Results

Contextual Info: N AUER PHILIPS/DISCRETE BSE D • bbSBTBl DOlbBOfl 5 ■ X - 2 S '- O l Power Devices GENERAL PURPOSE THYRISTORS in order of current rating * REPETITIVE N O N -R EP ETtT IV E PEAK PEAK ON-STATE R EVER SE VOLTAGE C U R R EN T lTsHmax.t2) V RHiyimax. RATE O F

BT145-500R

Abstract: PHILIPS BT152-400R BTW38-600R 400v 50A Transistor BT148-400R SOT-186 600RU BTW38-600RU 600v BTW38
Contextual Info: N AMER PHILIPS/DISCRETE 30 BSE D • b b S B ' m GOlbSQÖ 5 ■ T -Z S '-O l Power Devices GENERAL PURPOSE THYRISTORS in order of current rating PACKAGE OUTLINE AVERAGE ON-STATE CURRENT fT(RMS)m a x - lT (A V )m a x .< l> 2N5064 BT169B D E G TO-92 0.8A TO-92

BT151-500R

Abstract: fjs 500 BT136-500E BT136 500 BT136-500
Contextual Info: Power Devices General Purpose Thyristors in order of current rating (cont.) Package Outline Type No. RMS On-State Current Average On-State Current h iR M S t max- lT(AV)"'ax.(1) Repetitive Peak Reverse Voltage Non-Repetitive Peak On-State Current VRRMmax.

DO-2144AA

Contextual Info: World Products Inc. 19654 8th St. East, Sonoma, CA, USA, 95476 . . Phone: 707 996-5201 . . Fax: (707) 996-3380 Thyristors - SMTBJ Specifications FEATURES • · · · Bi-directional transient voltage protection. Nano second clamping response. Surge capability up to 250 amps.

NTE5685

Abstract: NTE5683 NTE5687 100A TRIAC NTE5680 NTE5681 NTE5682 NTE5684 NTE5686
Contextual Info: NTE5680 thru NTE5687 TRIAC, 25 Amp Description: The NTE5680 thru NTE5687 series of medium power TRIACs are bidirectional triode thyristors which may be switched from off–state to conduction for either polarity of applied voltage with positive or negative gate triggering. Theses devices are designed for control of AC loads in applications such as

NTE5673

Abstract: NTE5677 NTE5675 100A TRIAC triac 100a NTE5676 triac 600V 100A
Contextual Info: NTE5673 thru NTE5677 TRIAC – 15 Amp Description: The NTE5673 through NTE5677 series of meduim power TRIACs are bidirectional triode thyristors which may be switched from off–state to conduction for either polarity od applied voltage with positive or negative gate triggering. These devices are designed for control of AC loads in applications such

CR diode transient

Abstract: 064c
Contextual Info: SiBOD Thyristors Description The CR range of protectors are based on the proven technology of the T10 thyristor product. Designed for transient voltage protection of telecommunications equipment, it provides higher power handling than a conventional avalanche diode TVS and

DO-2144AA

Abstract: 500V 100A thyristors
Contextual Info: Thyristors SiBOD Breakover Devices SMTBJ Series “Crow Bar” Protection MECHANICAL CHARACTERISTICS To protect sensitive telecommunications • Transfer molded, void free epoxy body circuitry, Crydom Thyristors (SiBOD • Terminals: modified ‘J’ bend for large

NTE5621

Abstract: NTE5622 NTE5623 NTE5627
Contextual Info: NTE5621 thru NTE5627 TRIAC – 10 Amp Description: The NTE5621 through NTE5627 TRIACs are designed primarily for full–wave AC control applications, such as light dimmers, motor controls, heating controls, and power supplies; or wherever full– wave silicon gate controlled solid–state devices are needed. TRIAC type thyristors switch from a

ferraz protistor

Abstract: PROTISTOR FERRAZ PROTISTOR FERRAZ 1000V ferraz protistor fuse 600 CP ferraz protistor fuse ferraz protistor 600v protistor fuse IEC 60269-4 ferraz ferraz shawmut fuse 14x51 DIN43620
Contextual Info: Semiconductor Fuses Your guide to high speed fuse protection Semiconductor fuses that meet every major standard. Standards may change from country to country, but the need for safe, reliable circuit protection for semiconductor applications is the same the world over. That’s why Ferraz

AOR 3000

Abstract: D0214 pax thyristor marking aor 1cv5 22J 1KV Thyristor 100A,100V thyristor 150A
Contextual Info: T h y r i s t o r s SiBOD B r e a k o v e r D e v i c e s C 3 Y D O M I Control overpower T "Crow B sr” Prolsctlan MECHANICAL CHARACTB1ST1CS 76 protect sensitive teieconYnunications • Transfer molded, void free epoxy body circuitry, Qydcsm Thyristors (SiBCST

galvanized iron thermal conductivity

Abstract: 122.04.02 dps 350 power supply schematic reliance thyristor 400V motor operated valves wiring diagrams reliance thyristor wiring diagram 135.12.02 automax dps 450 power supply schematic 1620a 17
Contextual Info: AutoMax DPS DC Power Module Instruction Manual User Manual: 49 1335-e 06 Publication: AMXDPS-UM003D-EN TABLE OF CONTENTS GENERAL NOTES Chapter 1. Chapter 2. DESCRIPTION WITH SCHEMATIC DIAGRAM 1.5 Features .

Contextual Info: Thyristors S i B O D “ B r e a k o v e r D e v i c e s ? S MTB J Control overpower T "Cro w B a r" Protection MECHANICAL CHARACTERISTICS To protect sensitive telecom m unications • Transfer molded, void free epoxy body circuitry, Crydom Thyristors (SiBOD "

ST103S

Abstract: rc 3150 20UNF
Contextual Info: Bulletin I25183 rev. B 03/94 ST103S SERIES Stud Version INVERTER GRADE THYRISTORS Features 105A All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance

Contextual Info: OMNIREL CORP 43E ] m b7fltiQ73 QQDQTQfl Q . JS 8 S S E M CUSTOM PRODUCTS Circuit design, process design and quality engineers at Omnirel combine their talents along with our customer’s technical team to design application specific Power Hybrid Circuits . . , typified as follows:

SCR 15A 500V PWM DC motor

Abstract: IC Triac/SCR Zero Voltage Switch l 120 "MOS Controlled Thyristors" HALF BRIDGE NPN DARLINGTON POWER MODULE MOS-Controlled Thyristor Omnirel 10a 400v power amplifier bipolar transistor 2KW bldc half bridge converter 2kw MOS Controlled Thyristor
Contextual Info: OMNIREL CORP 43E j m b70^073 OQQCHDÔ 0 . JS 8 S S E M CUSTOM PRODUCTS Circuit design, process design and quality engineers at Omnirel combine their talents along with our customer’s technical team to design application specific Power Hybrid Circuits . . , typified as follows:

ST083S

Abstract: CS 15 thyristor EK 1E1
Contextual Info: Bulletin I25185 rev. B 03/94 ST083S SERIES Stud Version INVERTER GRADE THYRISTORS Features 85A All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance

AL 2450 dv

Abstract: ST083S thyristor cp 04 95
Contextual Info: Previous Datasheet Index Next Data Sheet Bulletin I25185/B ST083S SERIES Stud Version INVERTER GRADE THYRISTORS Features 85A All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance

Contextual Info: Bulletin I25238 10/06 ST333CPbF SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-200AB E-PUK 720A All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt

RC snubber thyristor design

Abstract: 200AB ST333C
Contextual Info: Bulletin I25170 rev. A 05/94 ST333C.C SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-200AB E-PUK All diffused design Center amplifying gate 720A Guaranteed high dV/dt Guaranteed high dI/dt

Contextual Info: Bulletin I25183 rev. B 03/94 ST103S SERIES Stud Version INVERTER GRADE THYRISTORS Features 105A All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance

"MOS Controlled Thyristors"

Abstract: MCT thyristor MOS Controlled Thyristor M65P100F1 MCTV65P100F1 MOS-Controlled Thyristor 1000V MCT MCTA65P100F1 2000A MOS MCTV65P1
Contextual Info: Semiconductor S April 1999 CES PRO NS N RAW W DESIG D H T T WI O NE PAR ETE - N OL OBS MCTV65P100F1, MCTA65P100F1 65A, 1000V P-Type MOS Controlled Thyristor MCT Features Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC ANODE ANODE

M65P100F1

Abstract: RHRG75120 equivalent MCT thyristor 1000v
Contextual Info: MCTV65P100F1, MCTA65P100F1 NS SIG E D S E M I C O N D U C T O R 0F2 EW R N 65P10 O F D CT3 DED MEN 00F2, M M O 1 REC 65P NOT MCT3A P-Type April 1998 See Features 65A, 1000V MOS Controlled Thyristor MCT Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC

"mos controlled thyristor"

Abstract: MOS Controlled Thyristor MCTA65P100F1 1000V MCT M65P100F1 MCTV65P100F1 MCT thyristor MCT thyristor 1000v
Contextual Info: MCTV65P100F1, MCTA65P100F1 S E M I C O N D U C T O R 65A, 1000V P-Type MOS Controlled Thyristor MCT April 1995 Features Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC ANODE ANODE CATHODE GATE RETURN CATHODE (FLANGE) • 2000A Surge Current Capability