500V 50A SCR Search Results

55n50

Abstract: ixys ixfn 55n50 IXFK50N50
Contextual Info: HiPerFETTM Power MOSFET IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die VDSS I D25 RDS on t rr 500V 500V 500V 500V 55A 80mW 250ns 50A 100mW 250ns 55A 80mW 250ns 50A 100mW 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK) Maximum Ratings

ixys ixfn 55n50

Abstract: 50n50 IXFK50N50 IXFN50N50 IXFK55N50 IXFN55N50
Contextual Info: HiPerFETTM Power MOSFET IXFN IXFN IXFK IXFK Single Die MOSFET 55N50 50N50 55N50 50N50 VDSS ID25 RDS on 500V 500V 500V 500V 55A 50A 55A 50A 80mΩ 100mΩ 80mΩ 100mΩ trr 250ns 250ns 250ns 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK)

ixys ixfn 55n50

Abstract: ixys ixfn55n50 IXFK50N50
Contextual Info: HiPerFETTM Power MOSFET IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die VDSS I D25 RDS on t rr 500V 500V 500V 500V 55A 80mW 250ns 50A 100mW 250ns 55A 80mW 250ns 50A 100mW 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK) Maximum Ratings

Contextual Info: Preliminary Data Sheet D V DSS HiPerFET Power MOSFET IXFN IXFN IXFK IXFK Single MOSFET Die 55N50 50N50 55N50 50N50 500V 500V 500V 500V K DS on ^D25 55A 50A 55A 50A 85m Q 100m£2 85m£2 100m£2 250ns 250ns 250ns 250ns TO-264 AA (IXFK) Symbol Maximum Ratings

Contextual Info: □ IXYS Preliminary Data Sheet V DSS HiPerFET Power MOSFET IXFN IXFN IXFK IXFK Single MOSFET Die 55N50 50N50 55N50 50N50 500V 500V 500V 500V D trr DS on ^D25 55A 50A 55A 50A 85m£2 100m£2 85m£2 100m£2 250ns 250ns 250ns 250ns TO-264 AA (IXFK) Symbol

Contextual Info: - 01 331 07 ODGObfib m b bOE D SENELAB PLC •SHLB '"T'3iì*3>l =^i SEME MOS POWER 4 IGBT LAB SML50G60BN SML50G50BN 600V 500V 50A 50A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Parameter Collector-Emitter Voltage

transistor TT 2146

Abstract: APT50G50BN APT50G60BN APT50G60 538J
Contextual Info: A DV A NC ED POIilER TECHNOLOGY b lE 0 2 S 7 ‘i 0 ti D OOO D' î DT S3b • A VP ADVANCED POW ER Te c h n o l o g y APT50G60BN APT50G50BN 600V 500V 50A 50A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR

Net ARM 50

Abstract: PD50F5
Contextual Info: FRD MODULE PD50F5 50A/500V/trr:90nsec OUTLINE DRAWING FEATURES * Isolated Base * Dual Diode Doubler Circuit * Ultra Fast Recovery * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * High Frequency Rectification Maximum Ratings

Contextual Info: FRD MODULE PD50F5 50A/500V/trr:90nsec OUTLINE DRAWING FEATURES * Isolated Base * Dual Diode Doubler Circuit * Ultra Fast Recovery * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * High Frequency Rectification Maximum Ratings

Contextual Info: FRD MODULE PC50F5 50A/500V/trr:90nsec OUTLINE DRAWING FEATURES * Isolated Base * Dual Diode Cathode Common * Ultra Fast Recovery * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * High Frequency Rectification Maximum Ratings Voltage Rating

cal 3200

Abstract: PC50F5
Contextual Info: FRD MODULE PC50F5 50A/500V/trr:90nsec OUTLINE DRAWING FEATURES * Isolated Base * Dual Diode Cathode Common * Ultra Fast Recovery * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * High Frequency Rectification Maximum Ratings Voltage Rating

Contextual Info: DESIGN UNITS> METRIC nn [INCHES] -4 | P REVISION — 1-FIRST ANGLE PROJECTION REV. DESCRPTIDN M.O DATE BY. ECN ND. 8.0 I- 1 ! I- 1 D M 50 500V 6mm2 C€ 300V 50A I 20~8 AWG j C ^U S Made in China NOTES: 1. Rating: UL 2. 3. 4. 5. 6. 300V IEC 500V 41 A

IXFN64N50PD2

Abstract: 64N50P SOT227B package 64N50
Contextual Info: IXFN64N50PD2 IXFN64N50PD3 PolarHVTM HiPerFET Power MOSFET Boost & Buck Configurations Ultra-fast FRED Diode VDSS ID25 RDS(on) trr 3 3 miniBLOC, SOT-227 B E153432 4 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 50A Ω ≤ 85mΩ

IXFN64N50PD2

Abstract: IXFN64N50PD3
Contextual Info: IXFN64N50PD2 IXFN64N50PD3 PolarHVTM HiPerFET Power MOSFETs Boost & Buck Configurations Ultra-fast FRED Diode VDSS ID25 RDS(on) trr 3 3 miniBLOC E153432 4 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 50A   85m  200ns

apt50m85jvr

Contextual Info: APT50M85JVR 50A 0.085Ω 500V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT50M85JVFR Ω 50A 0.085Ω 500V POWER MOS V FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT50M85JVFR 50A 0.085Ω 500V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT50M85JVFR

Abstract: FREDFET
Contextual Info: APT50M85JVFR Ω 50A 0.085Ω 500V POWER MOS V FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT50M85JVR

Contextual Info: APT50M85JVR 50A 0.085Ω Ω 500V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT50M85JVR 50A 0.085Ω Ω 500V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: i . | p u - y ia u y B International l R Rectifier SMPS M0SFET IR F B 11N 50A HEXFET Power MOSFET Applications • • • Switch Mode Power Supply SMPS Uninterruptable Power Supply High speed power switching V d ss 500V R d s (o n ) m a x 0.52£2 Id

nte5570

Abstract: NTE5572 NTE5574 500v 50a scr 50A 1200V SCR SCR Gate Drive
Contextual Info: NTE5570, NTE5572, & NTE5574 Silicon Controlled Rectifier SCR 125 Amp, TO94 Electrical Characteristics: (Maximum values @ TJ = +125°C unless otherwise specified) Repetitive Peak Voltages, VDRM & VRRM NTE5570 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

EVK31-050

Abstract: EVL31-050 EVM31-050 EVF31T-050A EVK71-050 etk85-050 EV1234M EVG31-050 ET1266M ETL81-050
Contextual Info: 2 2 3 8 7 9 2 C O LLM E R SEM ICO N D UCTO R IN C From ¡=UJT1 vüEK SfpE- 74 74C 0 0 7 4 8 D Ty D E | 223fl7T2 0 0 0 0 7 4 6 3 | The Leader in Power Transistor Technology ?3 ^7 f* mm* WÉ tÈÊÊÏÊ, • 200 A and 300 A Thesè 1200V {V0Ex <SUS } Darlington Powfcr

M505012FV

Abstract: E72445 M505012F
Contextual Info: Series M50 50-100Amp • SCR/DIODE Modules The M50 Series modules utilize highly efficient thermal management of provide high surge capability, long lifetime and reliable performance. Available in eight standard circuits, all models come in an industry standard package, provide 2500Vrms from all terminals to the