502 TJ Search Results

4606 fet

Contextual Info: WWWFASTRONGROUPCOM GpikpggtÓu"Mkv"<"GM/RKUP 905 407 502 907 æ":072"tgh 3502"ocz 502 407 33072"ocz RKUP 502 ;077"ocz Kpfwevcpeg RKUP/322O/26 RKUP/372O/26 RKUP/442O/26 RKUP/552O/26 RKUP/692O/26 RKUP/8:2O/26 RKUP/323O/26 RKUP/373O/26 RKUP/443O/26 RKUP/553O/26

TD62501

Abstract: TD62501F TD62501P TD62502F TD62502P TD62503F TD62503P TD62504F TD62504P TD62505P
Contextual Info: TD62501~507P/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 7CH SINGLE DRIVER TD62501, 502, 503, 504P / F : COMMON EMITTER

2N6059

Abstract: 2N6058 1000C 100C
Contextual Info: TECHNICAL DATA NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/502 Devices Qualified Level 2N6058 JANTX JANTXV 2N6059 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

5SDD0105Z0400

Abstract: 0105Z0400
Contextual Info: 5SDD 0105Z0400 5SDD 0105Z0400 Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications  Welding equipment  High current application up to 2000 Hz Key Parameters = 400 V RRM = 10 502

2N6059

Abstract: 2N6058 100C 1000C
Contextual Info: TECHNICAL DATA 2N6058 JANTX, JTXV 2N6059 JANTX, JTXV Processed per MIL-PRF-19500/502 PNP DARLINGTON POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation 1

Contextual Info: 5SDD 0105Z0401 5SDD 0105Z0401 Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications  Welding equipment  High current application up to 2000 Hz Key Parameters = 400 V RRM = 10 502

2N6058

Abstract: 2N6059
Contextual Info: TECHNICAL DATA 2N6058 JANTX, JTXV 2N6059 JANTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/502 PNP DARLINGTON POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

SEMIX402GAL

Contextual Info: SEMiX402GAL066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX402GAL066HDs VGES tpsc Tj ICRM = 2xICnom VCC = 360 V

Contextual Info: SEMiX402GAR066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX402GAR066HDs VGES tpsc Tj ICRM = 2xICnom VCC = 360 V

Contextual Info: SEMiX402GAR066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX402GAR066HDs VGES tpsc Tj ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V

Contextual Info: 5SDD 0105Z0400 5SDD 0105Z0400 Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications  Welding equipment  High current application up to 2000 Hz Key Parameters = 400 V RRM = 10 502

Contextual Info: SEMiX402GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX402GB066HDs VGES tpsc Tj ICRM = 2xICnom VCC = 360 V

CN300

Abstract: CP500 CP501 CP502 CP503 CP504
Contextual Info: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS CP500 / 501 / 502 CP503 / 504 TO-92 Plastic Package E BC General Purpose Audio Transistors Complementary CN300 series ABSOLUTE MAXIMUM RATINGS

CP501

Abstract: CN300 CP500 CP502 CP503 CP504 IC 504
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS CP500 / 501 / 502 CP503 / 504 TO-92 Plastic Package E BC General Purpose Audio Transistors Complementary CN300 series ABSOLUTE MAXIMUM RATINGS

Contextual Info: SEMiX402GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 800 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C

semix igbt GAL

Contextual Info: SEMiX402GAL066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 800 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS CP500 / 501 / 502 CP503 / 504 TO-92 Plastic Package E BC General Purpose Audio Transistors Complementary CN300 series ABSOLUTE MAXIMUM RATINGS

herrmann bridge rectifier

Abstract: 2KHB05 2KHB10 2KHBR05 2KHBR10 2KHBS05 2KHBS10 C1500 2KHBS4 BC1-500
Contextual Info: Bulletin 55 - 502 KHEL Khandelwal Herrmann Electronics Limited VRRM : 50 - 1000 Volts V RMS : 20 - 500 Volts I O AVG : 2.5 Ampere TECHNICAL SPIFICATIONS OF SILICON BRIDGE RECTIFIER DIODES TYPE 2KHB05 TO 2KHB10 ; 2KHBR05 TO 2KHBR10 ; 2KHBS05 TO 2KHBS10 FEATURES

Contextual Info: SEMiX402GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 800 A -20 . 20 V 6 µs -40 . 175 °C

Contextual Info: SEMiX402GAL066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 800 A -20 . 20 V 6 µs -40 . 175 °C

Contextual Info: SEMiX402GAR066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 800 A -20 . 20 V 6 µs -40 . 175 °C

PL350

Contextual Info: PL3502GP N THRU PL3506GP(N) Glass Passivated Auto Rectifier YENYO Voltage Range 200 to 600 V Current 35 Ampere Features ¬ Low forward voltage drop ¬ High current capability ¬ High reliability ¬ High surge current capability PRESS-FIT .506( O12.85) .502( O12.75)

Contextual Info: PL6002JP N THRU PL6006JP(N) Polyimide Passivated Auto Rectifier YENYO Voltage Range 200 to 600 V Current 60 Ampere Features PRESS-FIT ¬ Low forward voltage drop ¬ High current capability .506( O12.85) .502( O12.75) ¬ High reliability .468( O11.9) .460( O11.7)

Contextual Info: PL3502JP N THRU PL3506JP(N) Polyimide Passivated Auto Rectifier YENYO Voltage Range 200 to 600 V Current 35 Ampere Features PRESS-FIT ¬ Low forward voltage drop ¬ High current capability .506( O12.85) .502( O12.75) ¬ High reliability .468( O11.9) .460( O11.7)