508UM Search Results

MXP4000

Abstract: MXP4001 MXP4002 MXP4003 laser diode 10mw 1550nm construction of photo diode MXP400X
Contextual Info: MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400x series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.

Contextual Info: TGA2565-SM 11-17 GHz Medium Power Amplifier Applications •    Clock Driver for Optical Systems VSAT Point-to-Point Radio Test Equipment & Sensors QFN 4x4mm 24L Product Features        Functional Block Diagram Frequency Range: 11 - 17 GHz

PIN photodiode 850nm

Abstract: MXP7000 MXP7001
Contextual Info: MXP7001 – 12.5Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks S 10Gigabit Ethernet, Fibre Channel

Contextual Info: TGA2565-SM 11-17 GHz Medium Power Amplifier Applications •    Clock Driver for Optical Systems VSAT Point-to-Point Radio Test Equipment & Sensors QFN 4x4mm 24L Product Features        Functional Block Diagram Frequency Range: 11 - 17 GHz

construction of photo diode

Abstract: MXP4000 MXP4001 MXP4002 MXP4003 PHOTO diode
Contextual Info: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400x series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.

Contextual Info: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively

Contextual Info: MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The MXP4000 large active area and low dark current make it ideal for laser diode power monitoring applications. The device series offers superior noise

Contextual Info: MXP7001 – 10Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks S Gigabit Ethernet, Fibre Channel

13003 HJ

Abstract: HJ 13003 MJ 15030 mj 13003 CON-290 Irf 1540 N Irf 1540 G aries 14004 15017 F444
Contextual Info: ^i £x i t w f a r aaAw « «i fcet, then?are structure Is not an easy task. W eM m M ed la make It as easy «11 poa i r . f - 9 r* * t n j n t o 9 t °* P«o«* ««ItaM e on socket prvclrsj e 1 . Trjf j to •• aibte with the foflowing description. “• ‘ ' T - •■

1550nm photo diode for 10Gbps

Abstract: construction of photo diode MXP4005 1550nm catv receiver MXP4003 IR PHOTO DIODE amplifier 1550nm optical device 1550nm 10mW photo diode
Contextual Info: MXP4005 – 12.7 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400X series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.

MXP4000

Abstract: PIN PHOTO DIODE construction of photo diode
Contextual Info: MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively

construction of photo diode

Abstract: MXP7000 MXP7002 PIN PHOTO DIODE GaAs wafer 850nm Receivers
Contextual Info: MXP7002 – 3.125Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks S Gigabit Ethernet, Fibre Channel

Contextual Info: TGA2565-SM 11-17 GHz Medium Power Amplifier Applications •    Clock Driver for Optical Systems VSAT Point-to-Point Radio Test Equipment & Sensors QFN 4x4mm 24L Product Features        Functional Block Diagram Frequency Range: 11 - 17 GHz

Contextual Info: epitex Opto-Device & Custom LED 20 Elements LED array SPECIFICATION OF LED ARRAY AR850-20 [INFRARED] Specifications 1 Product Name 2) Type No. 3) Chip 1) Chip Material (2) Peak Wavelength (3) Emitting Area (4) Element Dimension (5) Chip Dimension (6) Elements Number

1550nm photo diode for 10Gbps

Abstract: MXP4003 MXP4005
Contextual Info: MXP4005 – 12.7 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCT KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. . The MXP400X series of photo diodes are currently offered in die

construction of photo diode

Abstract: MXP4000 MXP4001 MXP4002 MXP4003 IR PHOTO DIODE amplifier 1550nm 10mW photo diode
Contextual Info: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively

DIODE ED

Abstract: DIODE ED 11 ED 08 diode
Contextual Info: Obsolete Product – not recommended for new design MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DAT A SHEET KEY FEATURES DESCRIPTION ƒ ƒ ƒ ƒ ƒ High Responsivity Extremely Low Dark Current Extremely Low Capacitance

diode ed 85

Abstract: DIODE ED 11 1430nm ED 08 diode
Contextual Info: Obsolete Product – not recommended for new design MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DAT A SHEET KEY FEATURES DESCRIPTION ƒ ƒ ƒ ƒ ƒ High Responsivity Large Active Area Low Dark Current Custom Sub-mounts or TO package

Contextual Info: epitex Opto-Device & Custom LED 20 Elements LED array SPECIFICATION OF LED ARRAY AR880-20 [INFRARED] Specifications 1 Product Name 2) Type No. 3) Chip 1) Chip Material (2) Peak Wavelength (3) Emitting Area (4) Element Dimension (5) Chip Dimension (6) Elements Number

1550nm photo diode for 10Gbps

Contextual Info: Obsolete Product – not recommended for new design MXP4005 – 12.7 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400X series of photo diodes are currently offered in die form allowing manufacturers the

Contextual Info: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively