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Rochester Electronics LLC NGTB50N60FWG IGBT 600V 100A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGTB50N60FWG	Tube	10,950		93	1 - 10 - 100 $3.24 1000 $3.24 10000 $3.24	Buy Now
Rochester Electronics LLC IKW50N60TAFKSA1 IGBT TRENCH FS 600V 80A TO247-3
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DigiKey	IKW50N60TAFKSA1	Bulk	9,853		72	1 - 10 - 100 $4.18 1000 $4.18 10000 $4.18	Buy Now
Rochester Electronics LLC NGTG50N60FWG IGBT TRENCH 600V 100A TO-247-3
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DigiKey	NGTG50N60FWG	Tube	4,257		110	1 - 10 - 100 - 1000 $2.74 10000 $2.74	Buy Now
Vishay Siliconix SIHA150N60E-GE3 E SERIES POWER MOSFET THIN-LEAD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHA150N60E-GE3	Tube	1,980		1	1 $4.12 10 $2.911 100 $2.107 1000 $1.68632 10000 $1.68632	Buy Now
Rochester Electronics LLC NGTB50N60SWG IGBT TRENCH FS 600V 100A TO-247
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DigiKey	NGTB50N60SWG	Bulk	1,530		105	1 - 10 - 100 - 1000 $2.87 10000 $2.87	Buy Now

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50N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
50n60b Abstract: 50n60 50N6 IXGH50N60B Contextual Info: HiPerFASTTM IGBT IXGH IXGK IXGT IXGJ 50N60B 50N60B 50N60B 50N60B VCES IC25 = 600 = 75 = 2.3 VCE sat tfi(typ) = 120 V A V ns TO-247 AD (IXGH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	50N60B O-247 O-247AD 728B1 50n60b 50n60 50N6 IXGH50N60B	PDF
Contextual Info: IGBT High Speed IXSH 50N60B Short Circuit SOA Capability VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20	Original	50N60B O-247	PDF
50N6 Abstract: xs 004 a Contextual Info: ADVANCED TECHNICAL INFORMATION v v IXGN 50N60BD3 HîPerFÂST K1BT with HiPerFRED CES ^C25 CE sat = 600 V • 75 A = 2.5 V Buck configuration Symbol B CM Test Conditions SOT-227B, miniBLOC T, = 25°C to 150°C 600 V T. = 25°C to 150°C; RGE = 1 MO 600	OCR Scan	50N60BD3 OT-227B, 50N6 xs 004 a	PDF
IXGK50N60A2D1 Contextual Info: Advance Technical Data IGBT with Diode 50N60A2D1 VCES IXGX 50N60A2D1 IC25 VCE sat = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	IXGK50N60A2D1 50N60A2D1 IC110 IF110 50N60B2D1 O-264 PLUS247 405B2	PDF
IXGR50N60B2D1 Abstract: 50N60B2 Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM IXGR 50N60B2 IXGR 50N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 68 A = 2.2 V = 65 ns Preliminary Data Sheet IXGR_B2 IXGR_B2D1 Symbol Test Conditions Maximum Ratings	Original	ISOPLUS247TM 50N60B2 50N60B2D1 IC110 IF110 50N60B2D1 ISOPLUS247 2x61-06A 065B1 728B1 IXGR50N60B2D1	PDF
Contextual Info: ! a i x Y S Preliminary data V CES 50N60AU1 50N60AU1S IGBT with Diode ^C25 vw CE sat Combi Pack <?C S h o r t C ir c u it S O A C a p a b ilit y = 600 V = 75 A = 2.7 V TO-247 Hole-less SMD (50N60AU1S) G OE Symbol Test Conditions V CES T j = 25°C to 150 °C	OCR Scan	IXSX50N60AU1 IXSX50N60AU1S O-247 50N60AU1S)	PDF
50N60B2 Abstract: 50n60 Contextual Info: HiPerFASTTM IGBT B2-Class High Speed IGBTs Symbol Test Conditions VCES IC25 VCE sat tfi typ IXGH 50N60B2 IXGT 50N60B2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	50N60B2 IC110 O-247 O-268 50N60B2 50n60	PDF
Contextual Info: HiPerFASTTM IGBT IXGN 50N60B VCES IC25 VCE sat tfi(typ) = = = = 600 V 75 A 2.3 V 120ns Preliminary data sheet E Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient	Original	50N60B 120ns OT-227B E153432 728B1	PDF
Contextual Info: nixYS IGBT with Diode IXSK 50N60BU1 IXSX 50N60BU1 VCES ^C25 VCE sat = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions v CES ^ 600 V v C0R T j = 25° C to 150° C; RGE= 1 600 V v BES Continuous ±20 V VGEM Transient	OCR Scan	50N60BU1 50N60BU1 to150 PLUS247TM O-264AA IXSX50N60BU1	PDF
50N60A Abstract: IXGH50N60AS IXGH50N60A Contextual Info: HiPerFAST IGBT IXGH 50N60A IXGH 50N60AS VCES lC26 = 600 V = 75 A V = C E s a „ tfi 2 - 7 V = 275 ns Prelim inary data OE Symbol Test Conditions vt c e s Td = 25°C to 150°C vt c g r Tj V G ES v G EM ^C25 ^C90 ^CM SSOA (RBSOA P c Maximum Ratings 600	OCR Scan	50N60A 50N60AS O-247 D94006DE, IXGH50N60AS IXGH50N60A	PDF
50N60 Abstract: G 50N60 IXGH50N50B Contextual Info: HiPerFAST IGBT IXGH 50N50B IXGH 50N60B VcES ^C25 VCE sai tfi 500 V 75 A 2.3 V 80 ns 600 V 75 A 2.5 V 150 ns Preliminary data <) Symbol Test Conditions Maximum Ratings 50N50 50N60 V CES Tj = 25°C to 150°C 500 600 V VcOR Tj = 25°C to 150°C; RGE = 1 M n	OCR Scan	50N50B 50N60B 50N50 50N60 O-247 G 50N60 IXGH50N50B	PDF
IXGH50N60A Abstract: 100-200Q IXGH50N60AS Contextual Info: CUXYS HiPerFAST IGBT Surface Mountable IXGH 50N60A IXGH 50N60AS v CES = = = = ^C25 v CE sat 600 V 75 A 2.7 V 275 ns <) Symbol Test Conditions Maximum Ratings VCEs Tj = 25°C to ISO^C 600 V VCGB Tj = 25°C to 150“C; RQE = 1 M n 600 V V GES Continuous	OCR Scan	50N60A 50N60AS O-247 50N60A) B2-91 IXGH50N60A 100-200Q IXGH50N60AS	PDF
50n60 Abstract: G 50N60 50n80 bi-directional switches IGBT induction heat resonant TO-247 D-68623 Contextual Info: Advanced Technical Information IGBT with Reverse Blocking capability VCES = 600 / 800V IC25 = 60 A VCE sat = 2.5 V tf = 75 ns IXRH 50N80 IXRH 50N60 C TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Symbol Conditions	Original	50N80 50N60 O-247 50n60 G 50N60 50n80 bi-directional switches IGBT induction heat resonant TO-247 D-68623	PDF
50N60BD1 Abstract: 60-06A PLUS247 IXGK50N60BD1 Contextual Info: IXGK 50N60BD1 IXGX 50N60BD1 HiPerFASTTM IGBT with Diode VCES IC25 VCE sat tfi Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75	Original	50N60BD1 PLUS247 0-06A 50N60BD1 60-06A PLUS247 IXGK50N60BD1	PDF

50N60C2 Abstract: 50n60 IXGH50N60C2 Contextual Info: Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs Symbol Test Conditions VCES IC25 VCE sat tfi typ IXGH 50N60C2 IXGT 50N60C2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20	Original	50N60C2 IC110 O-247 O-268 50N60C2 50n60 IXGH50N60C2	PDF
50n60 Abstract: ixsk50n60au1 50N60AU1 Contextual Info: IGBT with Diode IXSK 50N60AU1 Combi Pack VCES IC25 VCE sat = 600 V = 75 A = 2.7 V Short Circuit SOA Capability Advanced data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	50N60AU1 O-264 50n60 ixsk50n60au1 50N60AU1	PDF
Contextual Info: □IXYS IGBT with Diode IXSK 50N60AU1 VC E S I Combi Pack = 600 V = 75 A = 2.7 V C 25 V C E sat Short Circuit S O A Capability ?C G OE Sym bol T est C onditions V CES T j = 25°C to 150°C 600 V VCGR T.J = 25°C to 150°C; Rrp = 1 M£2 Cat 600 V M axim um Ratings	OCR Scan	50N60AU1	PDF
Contextual Info: □ IXYS IXGK 50N60AU1 Hi Per FAST IGBT with Diode V C ES I C 25 VC E sat Combi Pack tn = = = = 600 V 75 A 2.7 V 275 ns ?C G OE Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20	OCR Scan	50N60AU1 O-264	PDF
BD3 diode Abstract: 50N60BD2 w a2a Contextual Info: HiPerFASTTM IGBT with HiPerFRED IXGN 50N60BD2 IXGN 50N60BD3 Buck & boost configurations IGBT .BD2 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75	Original	50N60BD2 50N60BD3 Applic100 BD3 diode w a2a	PDF
IXGX50N60B2D1 Contextual Info: Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 50N60B2D1 VCES IXGX 50N60B2D1 IC25 VCE sat B2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES	Original	50N60B2D1 IC110 IF110 O-264 PLUS247 0-06A 065B1 728B1 IXGX50N60B2D1	PDF
50N60A Abstract: IXGH50N60A Contextual Info: HiPerFASTTM IGBT IXGH 50N60A VCES IC25 VCE sat tfi = = = = 600 V 75 A 2.7 V 275 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient	Original	50N60A 50N60A IXGH50N60A	PDF
Contextual Info: HiPerFAST TM IGBT with Diode IXGK 50N60BD1 IXGX 50N60BD1 Preliminary data VCES IC25 VCE sat tfi = 600 V = 75 A = 2.3 V = 85 ns TO-264 AA (IXGK) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	50N60BD1 O-264 PLUS247	PDF
2X61 06a Abstract: ISOPLUS247 Contextual Info: HiPerFAST TM IGBT with Diode IXGR 50N60C2 IXGR 50N60C2D1 C2-Class High Speed IGBTs VCES IC25 VCE sat tfi(typ) = 600 V = 75 A = 2.7 V = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	50N60C2 50N60C2D1 IC110 2x61-06A 065B1 728B1 123B1 728B1 2X61 06a ISOPLUS247	PDF
Contextual Info: □ IXYS Preliminary data HiPerFAST IGBT IXGN 50N60B V CES I C25 V CE sat = 600 V = 75 A = 2.5 V « Maximum Ratings Symbol Test Conditions VCES Td = 25°C to 150°C 600 V VCGR Td = 25°C to 150°C; RGE = 1 M£i 600 V VGES Continuous ±20 V VGEM Transient	OCR Scan	50N60B	PDF

50N60 Search Results

50N60 Price and Stock

Rochester Electronics LLC NGTB50N60FWG

Rochester Electronics LLC IKW50N60TAFKSA1

Rochester Electronics LLC NGTG50N60FWG

Vishay Siliconix SIHA150N60E-GE3

Rochester Electronics LLC NGTB50N60SWG

50N60 Datasheets Context Search

50n60b

50N6

IXGK50N60A2D1

IXGR50N60B2D1

50N60B2

50N60A

50N60

IXGH50N60A

50n60

50N60BD1

50N60C2

50n60

BD3 diode

IXGX50N60B2D1

50N60A

2X61 06a