50E3 IR Search Results

nec 2035

Abstract: bias NESG2031M05
Contextual Info: NONLINEAR MODEL NESG2031M05 CCBPKG SCHEMATIC CCB LCPKG LB LBPKG Base Collector CCE Q1 LE CCEPKG LEPKG CBEPKG BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 Emitter ADDITIONAL PARAMETERS Parameters NESG2031M05 CCB 0.01 pF IS 1.593e-15 MJC 0.125

BJT BF 331

Abstract: BF 331 50e3
Contextual Info: NONLINEAR MODEL NESG2021M05 CCBPKG SCHEMATIC CCB LCPKG LB LBPKG Base Collector CCE Q1 LE CCEPKG LEPKG CBEPKG BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 Emitter ADDITIONAL PARAMETERS Parameters NESG2021M05 CCB 0.001 pF IS 4.429e-15 MJC 0.108

transistor NPN C124

Abstract: transisTOR C124 c124 transistor transistor PNP C124 c124 npn 50E3 C201 C202 C203 C205
Contextual Info: * OPA660X2 = MDB + MDT + MBC OPERATIONAL TRANSCONDUCTANCE AMPLIFIER * AND BUFFER COMPLEX MACROMODEL VERSION * CREATED 8/92 KL * REV.A * * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;

Contextual Info: ► Closed-Loop High Speed Buffer AN A LO G D E V IC E S FEATURES Bandwidth —110 MHz Slew Rate —3000 V / jjis Low Offset Voltage - < 1 m V Very Low Noise - < 4 n V /V H z Low Supply Current — 8.5 mA Mux Wide Supply Range - ± 5 to ±15 V Drives Capacitive Loads

DS 25AT

Contextual Info: RFF70N06 P HHARRIS W S E M I C O N D U C T O R 25At, 60V, Hermetically Packaged, Avalanche Rated N-Channel Enhancement-Mode Power MOSFET D e ce m b e r 1995 Features Package • 25A+, 60V JE D EC TO -254A A • rDS ON = 0.025i2 GATE • Temperature Compensating PSPICE Model

Contextual Info: Closed-Loop High Speed Buffer BUF04* ANALOG DEVICES FEATURES Bandwidth - 110 MHz Slew Rate - 3000 V/ jis Low Offset V oltage - <1 mV Very Low Noise - < 4 nV/VHz Low Supply Current - 8.5 mA Mux W ide Supply Range - ± 5 V to ± 1 5 V Drives Capacitive Loads

M766

Abstract: el7661c
Contextual Info: EL7661C F e a tu r e s G e n e r a l D e s c r ip t io n • • • • • • • • • • • • T he EL7661 provides a low cost solution to m any full bridge applications. T h e EL7661 is D C coupled so th a t th ere are no s ta rt up problem s associated w ith AC coupled schemes. A single

EWM 1000

Abstract: 902750 902950 EWM-900-FDTC-HS pll 564 EWM-900-FDTC-BS 50E3 wireless audio transmitter receiver schematic PLL FSK DEMODULATOR 9600 baud pll 564 schematic
Contextual Info: EWM-900-FDTC Designed for Voice and Data Applications 1000 foot operating range is possible -109 dBm Sensitivity 12dB SINAD 19.2K Baud Data Rate 56 Channels Full-Duplex Operation Low-Cost 902-928MHz Full-Duplex Audio/Data Transceiver The EWM-900-FDTC is ideal for unlicensed voice and data applications. The transceiver module requires no external RF components

Full Bridge Driver

Abstract: m7661
Contextual Info: EL7661C C lf llltB C EL7661C HlCH PÇ3FCRMANCE ANALÆG INTEGRATED CiRCjiTS 100V Full BiFldffC DTIVBT F e a tu re s G en era l D e sc r ip tio n • • • • • • • • • • • • The EL7661 provides a low cost solution to m any full bridge applications. The EL7661 is DC coupled so that there are no

transistor nec 8772

Abstract: nec 8772 transistor BR 8772 transistor BR 8772 nec 8772 NEC transistor 8772 MJE 4302 8772 nec transistor bias NESG2031M05 NESG2031M05
Contextual Info: NEC's NPN SiGe NESG2031M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 21.5 dB at 2 GHz

stm8l

Abstract: STM8L I2C Example STM8L10x STM8L ADC stm8l dma STM8L15x 50D5 AN3139 STM8l touch STM8L cpu programming manual
Contextual Info: AN3139 Application note Migration and compatibility guidelines for STM8L microcontroller applications Introduction For designers of STM8L microcontroller applications, it is important to be able to replace easily one microcontroller type by another one in the same product family. Migrating an

7661 DC/DC

Abstract: M766 3 phase inverter 180 conduction mode theory mosfet igbt drivers theory EL7661 EL7661CN QCX0002 QCX000J
Contextual Info: EL7661C C lf llltB C EL7661C HlCH PÇ3FCRMANCE ANALÆG INTEGRATED CiRCjiTS 100V Full BiFldffC DTIVBT F e a tu r e s G e n e ra l D e s c rip tio n • • • • • • • • • • • • The EL7661 provides a low cost solution to m any full bridge

Ic 9148

Abstract: c 4468 power transistor npn 4722 IC 4468 NEC 9736
Contextual Info: DATA SHEET NEC's NPN SiGe NESG2021M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz

transistor nec 8772

Abstract: nec 8772 transistor BR 8772 MJE 15004 transistor transistor BR 8772 NESG2031M05 MJE 4302 NESG2031M05-T1 NESG2031M05-T1-A S21E
Contextual Info: NPN SiGe RF TRANSISTOR NESG2031M05 NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz • HIGH MAXIMUM STABLE GAIN:

bf 331

Abstract: ic MAX 8997 ic 7804 bf331 Ic 9148 NESG2021M05 NESG2021M05-T1 S21E 285-2 MAG IC Nec 9002
Contextual Info: PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2021M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz

bf 331

Abstract: bf331 NESG2021M05 NESG2021M05-T1-A S21E ic MAX 8997
Contextual Info: DATA SHEET NEC's NPN SiGe NESG2021M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz

48T18

Abstract: m4t18 AI01024 T1A12
Contextual Info: M48T08 * 7 # . mn»giLiiemM i(gi_ M48T18 r r z S C S -T H O M S O N 64Kb (8K x 8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE,

48T18

Contextual Info: M 48T08 M 48T18 / I T S G S -T H O M S O N * 7 /. M < g ü æ J M M O Ê i CMOS 8K x 8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REALTIME CLOCKandPOWER-FAIL CONTROL CIRCUIT ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE,

MK48T08

Abstract: M48T08 SGS MK48T08 M48T18 SOH28 ZJA10 al00962 SGS M48T18
Contextual Info: 57. S G S -T H O M S O N « S M lilL iíM M iM íg S M 48T08 M 48T18 CMOS 8K x 8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REALTIME CLOCKand POWER-FAIL CONTROL CIRCUIT ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS

DEMODULATOR CLOCK VCO

Contextual Info: Data Sheet, Version 1.0, 2006-12-12 TDA5252 G2 ASK/FSK 915MHz Wireless Transceiver Wireless Control Components N e v e r s t o p t h i n k i n g . Edition 2006-12-12 Published by Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany Infineon Technologies AG 12/12/06.

EvalBoard

Abstract: TDA5252 lna vco mixer quadrature 2GHz pll fsk MODULATOR 50E3 TDA5250 TDA5255 300mhz demodulator dip fsk CV182 receiver tda 1072
Contextual Info: Data Sheet, Version 1.1, 2007-02-26 TDA5252 G2 ASK/FSK 915MHz Wireless Transceiver Wireless Control Components N e v e r s t o p t h i n k i n g . Edition 2007-02-26 Published by Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany Infineon Technologies AG 2/26/07.

Contextual Info: Data Sheet, Version 1.1, 2007-02-26 TDA5252 G2 ASK/FSK 915MHz Wireless Transceiver Wireless Control Components N e v e r s t o p t h i n k i n g . Edition 2007-02-26 Published by Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany Infineon Technologies AG 2/26/07.

M48T18

Abstract: M48T06 DS1643 M48T08 SOH28 st 9431 ST M48T18
Contextual Info: w , SGS-THOMSON M 48T08 M 48T 18 k7 # » RitlDÊlM IlilLIKËinSM QtÊS 6 4 K 8 K x 8 TIMEKEEPER INTEGRATED ULTRA LOW POWER SRAM, R EALTIM E CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY BYTEWIDE RAM-LIKE CLOCK ACCESS BCD CODED YEAR, MONTH, DAY, DATE,

a109d

Contextual Info: Da ta S heet, Versio n 1.7, 2 007-02-26 T DA5250 D2 ASK/FSK 868MHz Wireless Transceiver Wireless Components N e v e r s t o p t h i n k i n g . Edition 2007-02-26 Published by Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany Infineon Technologies AG 3/7/07.