50IV Search Results

Contextual Info: ucüdiuy Iou/1 y I A IVI F3 R e vise d 1 0-0 C RF Coax Connectors DIN Inserts inontimipr Coaxial Inserts 50iV75 12) Bulkhead cable jack for male connectors 0 Max. 2.6 .102 2.67 .105 C ab le Type R G 316 (50 Q) R G 179 (75 0 ) Width A c ro s s Flats of Hex Profile

10mhz crystal oscillator

Abstract: 10MHz oscillator BOX273 FAX913-782-6991
Contextual Info: OSCILLATORS S P EC IFIC A TIO N S — —-—iifi Output EC S -2 5 A . EC S -2 5 B EC S -2 5 C HCM OS H C M O S or T T L H C M O S or T T L Frequency Range 15 6 .2 5 kH z-2 0 .0 M H z 20.1 M H z-50IVIHz 1.2 5 M H z~ 2 0 M H z Frequency Tolerance ±50ppm or±100ppm

Contextual Info: CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2

12FL

Abstract: KDE0505PFS1-8
Contextual Info: r SPECIFICATION FOR APPROVAL CUSTOMER DESCRIPTION DIMENSIONS MODEL APPROVED NO APPROVED BY AUTHORZIED DC BRUSHLESS FAN 50X50X10 mm KDE0505PFS1-8 S3-&U. \X\ DAWN. ftt* CHKD. N, mm% j SPEC. NO. 052354300 ISSUE DATE 01.16.1996 APPD. -5 # = - EDITION REVISE DATE

Contextual Info: HFA3724 HARRIS S E M I C O N D U C T O R 400MHz Quadrature IF Modulator/Demodulator January 1997 Description Features Integrates all IF Transmit and Receive Functions The Harris 2.4GHz PRISM chip set is a highly integrated five-chip solution for RF modems employing Direct Sequence

Contextual Info: HFA3724 HARRIS S E M I C O N D U C T O R 400MHz Quadrature IF Modulator/Demodulator August 1997 Description Features Integrates all IF Transmit and Receive Functions The Harris 2.4GHz PRISM chip set is a highly integrated five-chip solution for RF modems employing Direct Sequence

Contextual Info: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is

Contextual Info: Extract from the online catalog HDFK 50I-VP VERGUSSPLATTE Order No.: 0709343 Feed-through terminal block Product notes WEEE/RoHS-compliant since: 01/01/2003 Commercial data EAN

Contextual Info: Extract from the online catalog HDFK 50I-VP DICHTPLATTE Order No.: 0709330 Feed-through terminal block Product notes WEEE/RoHS-compliant since: 01/01/2003 Commercial data EAN 4017918245450

Contextual Info: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar

Contextual Info: CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2

Protocols

Abstract: TACAN arn-118 stanag 4062 STANAG 4015 AMSG-719 stanag 4074 encoder litton MIL-HDBK-1553B ARC-182 vehicle multiplex system
Contextual Info: MIL-HDBK-1553A 1 November 1988 NOT MEASUREMENT SENSITIVE SUPERSEDING MIL-HDBK-1553 9 November 1984 M U L T I P L E X A P P L I C A T I O N S H A N D B O O K AMSC: N/A FSC: MCCR DISTRIBUTION STATEMENT D. Distribution authorized to the Department of Defense

MJ10100

Abstract: AR-109 AR109/D
Contextual Info: POWER TRANSISTOR SAFE OPERATING AREA — SPECIAL CONSIDERATIONS FOR MOTOR DRIVES — Prepared By W arren Schultz Motorola Inc. Power Products Division Phoenix, Arizona Reprinted by Permission of Intertech Communications, Inc., from the Proceedings of Motorcon '81.

Contextual Info: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar

Contextual Info: PRELIMINARY CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Cree’s CGHV40100 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high

CGHV22200

Contextual Info: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is

idq10

Contextual Info: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is

Contextual Info: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar

Contextual Info: Sealing plate - HDFK 50I-VP VERGUSSPLATTE - 0709343 Please be informed that the data shown in this PDF Document is generated from our Online Catalog. Please find the complete data in the user's documentation. Our General Terms of Use for Downloads are valid