50V 1A POWER TRANSISTOR Search Results

marking 12W SOT23

Contextual Info: ZXTP2025F 50V, SOT23, PNP medium power transistor Summary V BR CEV > -50V, V(BR)CEO > -50V IC(cont) = -5A RCE(sat) = 30m⍀ typical VCE(sat) < - 60mV @ -1A PD = 1.2W Complementary part number: ZXTN2031F Description Advanced process capability and package design have been used to

Contextual Info: DPLS350Y 50V PNP LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -50V   IC = -3A High Continuous Collector Current   ICM up to -5A Peak Pulse Current    2W Power Dissipation Low Saturation Voltage VCE sat < -180mV @ 1A

ZXTP2025

Abstract: zxtp2025f marking 12W SOT23 zxtp2025fta marking 312 SOT23 zetex ZXTN2031F ZXTN2031 mosfet marking 12W 12W MARKING sot23
Contextual Info: ZXTP2025F 50V, SOT23, PNP medium power transistor Summary V BR CEO > -50V IC(cont) = -5A RCE(sat) = 30m⍀ typical VCE(sat) < - 60mV @ -1A PD = 1.2W Complementary part number: ZXTN2031F Description Advanced process capability and package design have been used to

Contextual Info: ZXTP2025F 50V, SOT23, PNP medium power transistor Summary V BR CEO > -50V IC(cont) = -5A RCE(sat) = 30m⍀ typical VCE(sat) < - 60mV @ -1A PD = 1.2W Complementary part number: ZXTN2031F Description Advanced process capability and package design have been used to

Contextual Info: ZXTN25050DFH 50V, SOT23, NPN medium power transistor Summary BVCEX > 150V BVCEO > 50V BVECO > 5V IC cont = 4A VCE(sat) < 60mV @ 1A RCE(sat) = 40m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline

2SCR533P

Contextual Info: 2SCR533P Data Sheet NPN 3.0A 50V Middle Power Transistor lOutline Parameter Value VCEO IC 50V 3.0A MPT3 Base Collector Emitter 2SCR533P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR533P 3) Low VCE(sat) VCE(sat)=0.35V Max. (IC/IB=1A/50mA)

zxtn25050dfhta

Contextual Info: ZXTN25050DFH 50V, SOT23, NPN medium power transistor Summary BVCEX > 150V BVCEO > 50V BVECO > 5V IC cont = 4A VCE(sat) < 60mV @ 1A RCE(sat) = 40m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline

ZXTN25050DFH

Abstract: ZXTN25050DFHTA
Contextual Info: ZXTN25050DFH 50V, SOT23, NPN medium power transistor Summary BVCEX > 150V BVCEO > 50V BVECO > 5V IC cont = 4A VCE(sat) < 60mV @ 1A RCE(sat) = 40m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline

marking 322

Abstract: br 2222 npn
Contextual Info: ZXTN2031F 50V, SOT23, NPN medium power transistor Summary V BR CEV > 80V, V(BR)CEO > 50V IC(cont) = 5A RCE(sat) = 24m⍀ typical VCE(sat) < 40mV @ 1A PD = 1.2W Complementary part number: ZXTP2025F Description Advanced process capability and package design have been used to

Contextual Info: ZXTN2031F 50V, SOT23, NPN medium power transistor Summary V BR CEV > 80V, V(BR)CEO > 50V IC(cont) = 5A RCE(sat) = 24m⍀ typical VCE(sat) < 40mV @ 1A PD = 1.2W Complementary part number: ZXTP2025F Description Advanced process capability and package design have been used to

ZXTN2031FTA

Abstract: ZXTN2031F ZXTP2025F mosfet marking 12W
Contextual Info: ZXTN2031F 50V, SOT23, NPN medium power transistor Summary V BR CEV > 80V, V(BR)CEO > 50V IC(cont) = 5A RCE(sat) = 24m⍀ typical VCE(sat) < 40mV @ 1A PD = 1.2W Complementary part number: ZXTP2025F Description Advanced process capability and package design have been used to

MP2562DS

Abstract: mp2562 marking c6 qfn10 2A90V 101X101 MP2562DQ
Contextual Info: MP2562 1A, 4MHz, 50V Step-Down Converter The Future of Analog IC Technology DESCRIPTION FEATURES The MP2562 is a high frequency step-down switching regulator with an integrated internal high-side high voltage power MOSFET. It provides 1A output with current mode control for

2SAR513P

Abstract: T100
Contextual Info: Midium Power Transistors -50V / -1A 2SAR513P  Structure PNP Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -500mA / -25mA) (1) 2) High speed switching

MARKING PQ* SOT89

Abstract: marking AG marking 3A sot-89 2SA1797 T100 SOT89 pq SOT89 Package pq
Contextual Info: 2SA1797 Power Transistor -50V, -3A ʳ ϥFeatures 1) Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA. 2) Excellent DC current gain characteristics. 4) Complements the 2SA1797. ϥAbsolute maximum ratings (Ta=25°C) Parameter Symbol

T100

Contextual Info: Midium Power Transistors 50V / 3A 2SCR533P  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage, typically VCE (sat) = 0.13V (Max.) (IC / IB= 1A / 50mA) (1) 2) High speed switching  Applications

Contextual Info: Midium Power Transistors -50V / -1A 2SAR513P  Dimensions (Unit : mm)  Structure PNP Silicon epitaxial planar transistor  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -500mA / -25mA) (1) (2) (3) 2) High speed switching

Contextual Info: Midium Power Transistors 50V / 1A 2SCR513P  Dimensions (Unit : mm)  Structure NPN Silicon epitaxial planar transistor  Features 1) Low saturation voltage, typically VCE (sat) = 0.35V (Max.) (IC / IB= 500mA / 25mA) (1) (2) (3) 2) High speed switching

Contextual Info: Midium Power Transistors -50V / -3A 2SAR533P  Dimensions (Unit : mm)  Structure PNP Silicon epitaxial planar transistor  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) (1) (2) (3) 2) High speed switching

2SCR533P

Contextual Info: Midium Power Transistors 50V / 3A 2SCR533P  Dimensions (Unit : mm)  Structure NPN Silicon epitaxial planar transistor  Features 1) Low saturation voltage, typically VCE (sat) = 0.13V (Max.) (IC / IB= 1A / 50mA) (1) (2) (3) 2) High speed switching

2SCR513P

Abstract: T100
Contextual Info: Midium Power Transistors 50V / 1A 2SCR513P  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage, typically VCE (sat) = 0.35V (Max.) (IC / IB= 500mA / 25mA) (1) 2) High speed switching  Applications

2SC5053

Abstract: 2SA1900 T100
Contextual Info: 2SC5053 Transistors Medium power transistor 50V, 1A 2SC5053 zDimensions (Unit : mm) zFeatures 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA/ 50mA 2) PC=2W (on 40x40×0.7mm ceramic board) 3) Complements the 2SA1900 MPT3 (1)Base

2SC5053

Abstract: 2SA1900 T100
Contextual Info: 2SC5053 Transistors Medium power transistor 50V, 1A 2SC5053 zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA/ 50mA 2) PC=2W (on 40x40×0.7mm ceramic board) 3) Complements the 2SA1900 MPT3

2SC5053

Abstract: 2SA1900 T100
Contextual Info: 2SC5053 Transistors Medium power transistor 50V, 1A 2SC5053 zDimensions (Unit : mm) zFeatures 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA/ 50mA 2) PC=2W (on 40x40×0.7mm ceramic board) 3) Complements the 2SA1900 MPT3 1.5 2.5

MP6X13

Contextual Info: Midium Power Transistors 50V / 3A MP6X13  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage VCE (sat) = 0.35V (Max.) (IC / IB= 1A / 50mA) (1) (2) (3) (4) (5) (6) 2) High speed switching