50V 8A 1MHZ DIODE Search Results

ZENER 148 Datasheet

Abstract: IC 406
Contextual Info: NTE2340 Silicon NPN Transistor Darlington Power Amp, Switch Features: D 60V Zener Diode Built–In Between Collector and Base D Very Small Fluctuation in Breakdown Voltages D Large Energy Handling Capability D High Speed Switching Absolute Maximum Ratings: TC = +25°C unless otherwise specified

NTE2336

Contextual Info: NTE2336 Silicon NPN Transistor Darlington Switch w/Internal Damper & Zener Diode Features: D 60V Zener Diode Built–In Between Collector and Base D Low Fluctuation in Breakdown Voltages D High Energy Handling Capability D High Speed Switching Absolute Maximum Ratings: TC = +25°C unless otherwise specified

zener 4A

Abstract: Zener 224 NTE2336
Contextual Info: NTE2336 Silicon NPN Transistor Darlington Switch w/Internal Damper & Zener Diode Features: D 60V Zener Diode Built−In Between Collector and Base D Low Fluctuation in Breakdown Voltages D High Energy Handling Capability D High Speed Switching Absolute Maximum Ratings: TC = +25°C unless otherwise specified

75372

Abstract: 2SJ654
Contextual Info: Ordering number : ENN7537 2SJ654 P-Channl Silicon MOSFET 2SJ654 DC / DC Converter Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2063A [2SJ654] 4.5 2.8 5.6 18.1 16.0 3.2 3.5 7.2 10.0 2.4

IRGB4060D

Abstract: IRF1010 CT4-15
Contextual Info: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

Contextual Info: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V IC = 8.0A, TC = 100°C Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C

IRF1010

Abstract: 8A2021
Contextual Info: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

Contextual Info: PD - 97073 IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

2SJ664

Contextual Info: 2SJ664 Ordering number : EN8589 P-Channel Silicon MOSFET 2SJ664 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.

K3618

Abstract: 2SK3618
Contextual Info: 2SK3618 Ordering number : ENN8325 2SK3618 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors MJD122 TRANSISTOR（NPN） TO-252-2L FEATURES 1.BASE ∙ High DC Current Gain ∙ Electrically Similar to Popular TIP122 ∙ Built-in a Damper Diode at E-C 2.COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L MJD127 Plastic-Encapsulate Transistors TO-252-2L TRANSISTOR PNP FEATURES 1. BASE High DC Current Gain Electrically Similar to Popular TIP127 Built-in a Damper Diode at E-C 2. COLLECTOR 3. EMITTER

AO4292

Contextual Info: AO4292 100V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS αMOS MV technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications • RoHS and Halogen-Free Compliant Applications ID (at VGS=10V)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD122 TRANSISTOR（NPN） TO-251-3L FEATURES 1.BASE ∙ High DC Current Gain ∙ Electrically Similar to Popular TIP122 ∙ Built-in a Damper Diode at E-C 2.COLLECTOR

AO4452

Abstract: ao44
Contextual Info: AO4452 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AO4452 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well

2SK3519-01

Contextual Info: 2SK3519-01 Super FAP-G Series FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

2SK3520-01MR

Abstract: L498
Contextual Info: 2SK3520-01MR Super FAP-G Series FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

Hitachi DSA002759

Contextual Info: 4AM17 Silicon N/P Channel MOS FET High Speed Power Switching ADE-208-729 Z 1st. Edition January 1999 Features • Low on-resistance N Channel : RDS(on) ≤ 0.17Ω, VGS = 10V, ID = 4A P Channel : RDS(on) ≤ 0.2Ω, VGS = –10V, ID = –4A • 4V gate drive devices.

2SK3520-01MR

Contextual Info: 2SK3520-01MR FUJI POWER MOSFET 2SK3520-01MR FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings 10 1 10 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof D=0.5 0.2 0.1 0.05 o Zth ch-c [ C/W]

Contextual Info: 2SK3519-01 FUJI POWER MOSFET 2SK3519-01 FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 1 10 D=0.5 o Zth ch-c [ C/W] 10 0.2

AO4452L

Abstract: AO4452 ao44 Universal Technology
Contextual Info: AO4452L N-Channel SDMOS TM Power Transistor General Description Product Summary The AO4452L is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well

RDN080N25

Contextual Info: RDN080N25 Transistors Switching 250V, 8A RDN080N25 zExternal dimensions (Units : mm) TO-220FN 4.5 +0.3 −0.1 10.0 +0.3 −0.1 5.0±0.2 8.0±0.2 15.0 +0.4 −0.2 14.0±0.5 zApplication Switching 1.2 +0.2 2.8 −0.1 3.2±0.2 12.0±0.2 zFeatures 1) Low on-resistance.

AO4452

Contextual Info: AO4452 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AO4452 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well

Contextual Info: 2SK3520-01MR Super FAP-G Series FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply