5102 MOSFET Search Results

74857

Abstract: 18A60
Contextual Info: SPICE Device Model SUD50N025-4m5P Vishay Siliconix N-Channel 25V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Tem ic SÌ9405DY Se m ic o n d u c to r s P-Channel Enhancement-Mode MOSFET Product Summary V d s V rDS(on) (Q ) 20 I d (A) 0.10 @ VGS = -1 0 V ±4.3 0.16 @ Vc s = -4.5 V ±3.4 Recommended upgrade: Si9430DY Lower profile/smaller size— see LITE FOOT equivalent: Si6447DQ

si9405dy

Abstract: Si6447DQ Si9430DY
Contextual Info: Si9405DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –10 V "4.3 0.16 @ VGS = –4.5 V "3.4 Recommended upgrade: Si9430DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6447DQ S S SO-8 NC 1 8

si9405dy

Abstract: Si6447DQ Si9430DY
Contextual Info: Si9405DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –10 V "4.3 0.16 @ VGS = –4.5 V "3.4 Recommended upgrade: Si9430DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6447DQ S S SO-8 NC 1 8

5102 mosfet

Abstract: TSM75N03
Contextual Info: $ TAIW AN TSM75N03 S E M IC O N D U C T O R 25V N-Channel MOSFET pb RoHS C O M P L IA N C E TO -252 PRODUCT SUM M ARY Pin Definition; 1. Gate V o s (V ) 2. Drain 3. Source M 25 RDS(on)(nnQ) I d (A ) 4.5 @ Vos = 10V 20 6.5 @ V üs - 4.5V 20 Ì 2~3 Features

Contextual Info: TAIW AN $ TSM75N03 SEMICONDUCTOR 25V N-Channel MOSFET bl RoHS CO M PLIANCE T O -252 PRODUCT SUM M ARY Pin Definition: 1. Gate 2. Drain 3. Source & V DS V Id R D S(on)(nnQ) (A) 4.5 @ Vos = 10V 20 6.5 @ V üs - 4.5V 20 25 1 2 3 Features Block Diagram ♦ Advanee Trench P rocess T echnology

Contextual Info: TAIW AN s TSM75N03 SEMICONDUCTOR 25V N-Channel MOSFET bl RoHS CO M PLIANCE T O -252 PRODUCT SUM M ARY Pin Definition: 1. Gate V DS V 2. Drain 3. Source & Id R D S(on)(nnQ) (A) 4.5 @ Vos = 10V 20 6.5 @ V üs - 4.5V 20 25 1 2 3 Features Block Diagram ♦ A dva n ce Tre nch Proce ss Technol ogy

M08-FET

Abstract: 5102 mosfet
Contextual Info: SÎ4833DY_ Vishay Siliconix P-Ch 30-V D-S MOSFET With Schottky Diode New Product M OSFET PRODUCT SUMM ARY V w tV ) r DS{on| i& \ I d (A) 0.085 @ V a s = “ 10 V ± 3 .5 0.180 @ V q S ss - 4 .5 V ± 2 .5 -3 0 p \o s SCHO TTKV PRODUCT SUMM ARY

irfd9123

Abstract: tc 9123 IRFD 123
Contextual Info: m IR F D 9 1 2 0 IR F D 9 1 2 3 HARRIS Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 1 9 9 4 Features Package 4 - PIN D U A L -IN -L IN E TOP VIEW • -1.0 A and -0.8A , -8 0 V and -100V • rDS ON = 0-6H and 0 .8 ri • Single Pulse Avalanche Energy Rated

5102 VSSOP-10

Contextual Info: LM5102 www.ti.com SNVS268 – MAY 2004 LM5102 High Voltage Half-Bridge Gate Driver with Programmable Delay Check for Samples: LM5102 FEATURES DESCRIPTION • The LM5102 High Voltage Gate Driver is designed to drive both the high side and the low side N-Channel

1rfd9120

Contextual Info: • H 4 3 D 5 E7 1 OOSMSfl? 7TT ■ a HAS I R F D r r i s 9 1 2 0 I R F D 9 1 2 3 Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 19 9 4 Features Package 4 - PIN D U A L -IN -L IN E • -1.0 A and -0.8A , -8 0 V and -10 0 V TO P VIEW • rDS ON = 0 .6 H and 0 .8 ÎI

CA15B

Contextual Info: New Product SUD50N025-4m5P Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a, d 0.0045 at VGS = 10 V 50 0.0060 at VGS = 4.5 V 50 VDS (V) 25 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 36.25 nC

CA15B

Contextual Info: SUD50N025-4m5P Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, d 0.0045 at VGS = 10 V 50 0.0060 at VGS = 4.5 V 50 VDS (V) 25 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 36.25 nC COMPLIANT

5102 mosfet

Contextual Info: SUD50N025-4m5P Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, d 0.0045 at VGS = 10 V 50 0.0060 at VGS = 4.5 V 50 VDS (V) 25 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 36.25 nC COMPLIANT

TA9910

Abstract: RURU50100 RURU5070 RURU5080 RURU5090
Contextual Info: RURU5070, RURU5080, RURU5090, RURU50100 S E M I C O N D U C T O R 50A, 700V - 1000V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . .<125ns JEDEC STYLE SINGLE LEAD TO-218 ANODE o • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C

Contextual Info: SUD50N025-4m5P Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, d 0.0045 at VGS = 10 V 50 0.0060 at VGS = 4.5 V 50 VDS (V) 25 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 36.25 nC COMPLIANT

Contextual Info: SUD50N025-4m5P Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, d 0.0045 at VGS = 10 V 50 0.0060 at VGS = 4.5 V 50 VDS (V) 25 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 36.25 nC COMPLIANT

intel pentium 4 motherboard schematic diagram

Abstract: pentium 4 motherboard schematic diagram PC dual core MOTHERBOARD CIRCUIT diagram full intel pentium 3 motherboard schematic diagram 2SK1388 transistor of value vce 3v P54C schematic diagram ac power regulator 2N2222 NPN Transistor features D44H11
Contextual Info: F A IR C H IL D s e m ic o n d u c t o r Tm w w w .fa ir c h ild s e m i.c o m R C 5 1 02 Dual A d ju sta b le Voltage Regulators • • • • • • • • • The RC5102, in combination with low Rds,on n-channel M OSFETs, provides a precision low-dropout dual voltage

L320 transistor

Abstract: nec transistor k 4145 1. VOUT 2. GND 3. VIN 4. CE 5. VOUT SOT-23-5 RB111c* rohm
Contextual Info: It n n JL Tr EXTERNAL VFM STEP-UP DC/DC CONVERTER CONTROLLER N O .E A -0 4 2 -9 8 0 3 RN5RY202 OUTLINE T he RN5RY202 Series are VFM chopper Control ICs for step-up D C/DC converter with an external power transis­ tor featuring high output voltage accuracy and low supply current by CMOS process. T he RN5RY202 Series ICs

Contextual Info: General Description Features The MIC5012 is the dual member of the Micrel MIC501X driver family. These ICs are designed to drive the gate of an N-channel power MOSFET above the supply rail in highside power switch applications. The 14-pin MIC5012 is extremely easy to use, requiring only a power FET and

IRF540

Abstract: wiring diagram for ge cr2943 100W DC motor driver
Contextual Info: MIC5011 Minimum Parts High- or Low-Side MOSFET Driver General Description Features The MIC5011 is the “minimum parts count" member of the Micrel MIC501X driver family. These ICs are designed to drive the gate of an N-channel power MOSFET above the supply rail in high-side power switch applications. The 8-pin

1RFP044

Abstract: wiring diagram for ge cr2943 CR2943 CR2943-NA102A EM- 546 motor wiring diagram for ge cr2943na102a 5106 fet driver
Contextual Info: MIC5012 Dual High- or Low-Side MOSFET Driver General Description Features The MIC5012 is the dual m em ber of the Micrel MIC501X driver fam ily. These ICs are designed to drive the gate of an N-channel power M OSFET above the supply rail in highside power switch applications. The 14-pin MIC5012 is

Contextual Info: LM5102 www.ti.com SNVS268A – MAY 2004 – REVISED MARCH 2013 LM5102 High Voltage Half-Bridge Gate Driver with Programmable Delay Check for Samples: LM5102 FEATURES DESCRIPTION • The LM5102 High Voltage Gate Driver is designed to drive both the high side and the low side N-Channel

P-Channel Depletion Mosfets

Abstract: B4477 DG381AAK Depletion
Contextual Info: SI L I C O N I X T «SIX DG381A/384A/387A/390A General Purpose CMOS Analog Switches e x ' S ilic o n ix Jm B flSSM73S Q O l h M M B 33E D INC in c o r p o r a te d -T - S H I FEATURES BENEFITS