512 X 8 STATIC RAM Search Results

CY7C1051DV33-15ZSXE

Abstract: AN1064 CY7C1051DV33 CY7C1051DV33-10BAXI
Contextual Info: CY7C1051DV33 8-Mbit 512 K x 16 Static RAM 8-Mbit (512K x 16) Static RAM Features Functional Description The CY7C1051DV33[2] is a high performance CMOS Static RAM organized as 512 K words by 16 bits. • Temperature ranges ❐ Industrial: –40 °C to 85 °C

x2004

Abstract: XICOR x2004 X20C04
Contextual Info: X20C04 X20C04 4K 512 x 8 Bit Nonvolatile Static RAM FEATURES DESCRIPTION • The Xicor X20C04 is a 512 x 8 NOVRAM featuring a static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM E2PROM . The X20C04 is fabricated with advanced CMOS floating gate technology to

Contextual Info: CY7C1051DV33 8-Mbit 512 K x 16 Static RAM 8-Mbit (512K x 16) Static RAM Features Functional Description • Temperature ranges ❐ –40 °C to 85 °C The CY7C1051DV33 is a high performance CMOS Static RAM organized as 512 K words by 16-bits. ■ High speed

Contextual Info: CY7C1051DV33 8-Mbit 512 K x 16 Static RAM 8-Mbit (512K x 16) Static RAM Functional Description Features • Temperature ranges ❐ –40 °C to 85 °C The CY7C1051DV33 is a high performance CMOS Static RAM organized as 512 K words by 16-bits. ■ High speed

XICOR x2004

Abstract: X2004 X20C04
Contextual Info: X20C04 X20C04 4K 512 x 8 Bit Nonvolatile Static RAM FEATURES DESCRIPTION • The Xicor X20C04 is a 512 x 8 NOVRAM featuring a static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM E2PROM . The X20C04 is fabricated with advanced CMOS floating gate technology to

X20C04

Abstract: X2004
Contextual Info: Advance Information X K X20C04 4K 512 x 8 Bit Nonvolatile Static RAM DESCRIPTION FEATURES The Xicor X20C04 is a 512 x 8 NOVRAM featuring a static RAM overlaid bit-for-bit with a nonvolatile electri­ cally erasable PROM E2PROM . The X20C04 is fabri­ cated with advanced CMOS floating gate technology to

Contextual Info: U630H04 HardStore 512 x 8 nvSRAM F Packages: Features F High-performance CMOS nonvolatile static RAM 512 x 8 bits F 25 ns Access Time F 12 ns Output Enable Access Time F Unlimited Read and Write to SRAM F Hardware STORE Initiation STORE Cycle Time < 10 ms

Contextual Info: U630H04 Preliminary HardStore 512 x 8 nvSRAM F Packages: Features F High-performance CMOS nonvolatile static RAM 512 x 8 bits F 25 and 45 ns Access Times F 12 and 25 ns Output Enable Access Times F Unlimited Read and Write to SRAM F Hardware STORE Initiation

ZMD cross reference

Contextual Info: U633H04 Preliminary PowerStore 512 x 8 nvSRAM Features Description F High-performance CMOS nonvolatile static RAM 512 x 8 bits F 25 and 45 ns Access Times F 12 and 25 ns Output Enable Access Times F I = 15 mA at 200 ns Cycle Time F Unlimited Read and Write to

PDIP24

Abstract: U636H04
Contextual Info: U636H04 Preliminary PowerStore 512 x 8 nvSRAM Features Description F High-performance CMOS nonvolatile static RAM 512 x 8 bits F 25 and 45 ns Access Times F 12 and 25 ns Output Enable Access Times F I = 15 mA at 200 ns Cycle Time F Unlimited Read and Write to

Contextual Info: This is a partial data sheet. F or com plete data sheet, see Section 8, Modules. CYM1821 s CYPRESS SEMICONDUCTOR 16K x 32 Static RAM Module Features Functional Description • High-density 512-kbit SRAM module T he CYM1821 is a high-performance 512-kbit static RAM module organized as

A16Q2

Contextual Info: HM62W8512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-904B (Z) Rev. 1.0 Dec. 17, 1998 Description The Hitachi HM62W8512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 ( Am Hi-CMOS process

YC 2604

Contextual Info: 128K X 8 64K X 8 CMOS DUAL-PORT STATIC RAM MODULE Integrated Device Technology, Inc. IDT7M1001 IDT7M1003 FEATURES DESCRIPTION: • High-density 1M /512 K C M O S Dual-Port Static RAM T h e ID T 7 M 1001 /ID T 7 M 1003 is a 128K x 8/6 4K x 8 high­ speed C M O S D ual-Port Static RA M m odule constructed on a

Contextual Info: HM62W8512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-904B (Z) Rev. 1.0 Dec. 17, 1998 Description The Hitachi HM62W8512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 jam Hi-CMOS process

Contextual Info: U633H04 PowerStore 512 x 8 nvSRAM Features Description F High-performance CMOS nonvolatile static RAM 512 x 8 bits F 25 ns Access Time F 12 ns Output Enable Access Time F I = 15 mA at 200 ns Cycle Time F Unlimited Read and Write to SRAM F Automatic STORE to EEPROM

Contextual Info: HM62V8512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-905 (Z) Preliminary, Rev. 0.0 April 24, 1998 Description The Hitachi HM62V8512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 (Am Hi-CMOS process technology.

Contextual Info: HM628512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-903B (Z) Rev. 1.0 Jan. 13, 1999 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 jam Hi-CMOS process technology.

628512blp

Contextual Info: HM628512BI Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-935A (Z) Preliminary, Rev. 0.1 Dec. 14, 1998 Description The Hitachi HM628512BI is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 jam Hi-CMOS process technology.

of RAS 0510 of 5 volts

Abstract: AN56 X20C04 X20C05 X20C16
Contextual Info: APPLICATION NOTE A V A I L A B L E AN56 X20C05 X20C05 4K 512 x 8 High Speed AUTOSTORE NOVRAM FEATURES DESCRIPTION • • The Xicor X20C05 is a 512 x 8 NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM E2PROM . The

AN56

Abstract: X20C04 X20C05 X20C16
Contextual Info: APPLICATION NOTE A V A I L A B L E AN56 X20C05 X20C05 4K 512 x 8 High Speed AUTOSTORE NOVRAM FEATURES DESCRIPTION • • The Xicor X20C05 is a 512 x 8 NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM E2PROM . The

HM628512ALP-7

Abstract: HM628512ALP-5 HM628512ALP-5SL HM628512ALFP-7 A17a DP-32 HM628512A HM628512ALFP-5 HM628512ALFP-5SL HM628512ALP-7SL
Contextual Info: HM628512A Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-640B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HM628512A is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.5 (Am Hi-CMOS process technology. The

Contextual Info: HM62W8512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-904 (Z) Preliminary, Rev. 0.0 April 24, 1998 Description The Hitachi HM62W8512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 (Am Hi-CMOS process

Contextual Info: HM628512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-903B (Z) Rev. 1.0 Jan. 13, 1999 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 ( A m Hi-CMOS process technology.

AN56

Abstract: X20C04 X20C05 X20C16
Contextual Info: APPLICATION NOTE A V A I L A B L E AN56 X20C05 X20C05 4K 512 x 8 High Speed AUTOSTORE NOVRAM FEATURES DESCRIPTION • • The Xicor X20C05 is a 512 x 8 NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM E2PROM . The