512KX8 Search Results

Contextual Info: o bq4850Y U N I T R O D E - RTC Module with 512Kx8 NVSRAM Features General Description >• I n te g r a t e d SRAM, re a l-tim e clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a non­ volatile 4,194,304-bit SRAM organ­

K6R4016V1D-J

Abstract: K6R4008 K6R4008V1D K6R4004C1D-JC K6R4016
Contextual Info: PRELIMINARY CMOS SRAM K6R4008V1D Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001

Contextual Info: ESMT F25L004A Operation Temperature condition -40 °C ~85 °C 4Mbit 512Kx8 3V Only Serial Flash Memory „ FEATURES y Single supply voltage 2.7~3.6V y Speed - Read max frequency : 33MHz - Fast Read max frequency : 50MHz; 75MHz; 100MHz y y y Auto Address Increment (AAI) WORD Programming

SMD transistor n36

Abstract: smd transistor A13 transistor smd f36 EDI88128CS EDI88512CA EDI88512LPA
Contextual Info: EDI88512CA HI-RELIABILITY PRODUCT 512Kx8 Monolithic SRAM, SMD 5962-95600 FEATURES The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM. • Access Times of 15, 17, 20, 25, 35, 45, 55ns The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. All 32 pin packages are pin for pin

smd code F18

Abstract: act-s512k32n 5962-9461110HTC ACT-S512K32N-017P7Q 5962-9461110 CQFP 80 footprint cqfp 280
Contextual Info: ACT–S512K32 High Speed 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 ■ Input and Output TTL & CMOS Compatible Design ■ Fast 17,20,25,35,45,55ns Access Times