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    Untitled

    Abstract: No abstract text available
    Text: HY62KF08401C Series 512Kx8bit full CMOS SRAM Document Title 512K x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Mar.21.2001 Final 01 Changed Isb1 values Jun.07.2001 Final This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility


    Original     		PDF HY62KF08401C 512Kx8bit HY62KF08401C

    HY628400ALLG-55

    Abstract: VDR 0047 HY628400ALG-55 hy628400allg HY628400ALLG-I
    Text: HY628400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 04 Revision History Insert Jul.06.2000 Final 05 Revised - Change Iccdr Value : 15uA => 20uA Aug.04.2000 Final 06 Marking Information Add


    Original     		PDF HY628400A 512Kx8bit HY628400A HY628400ALLG-55 VDR 0047 HY628400ALG-55 hy628400allg HY628400ALLG-I

    2048x2048

    Abstract: No abstract text available
    Text: HY62UF8400/ HY62QF8400/ HY62EF8400/ HY62SF8400 Series 512Kx8bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF8400 / HY62QF8400 / HY62EF8400 / HY62SF8400 is a high speed and super low power 4Mbit full CMOS SRAM organized as 524,288 words by 8 bits. The HY62UF8400 /


    Original     		PDF HY62UF8400/ HY62QF8400/ HY62EF8400/ HY62SF8400 512Kx8bit HY62UF8400 HY62QF8400 HY62EF8400 2048x2048

    Untitled

    Abstract: No abstract text available
    Text: HY62U8400A Series 512Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62U8400A is a high-speed, low power and 4M bits CMOS SRAM organized as 512K words by 8 bits. The HY62U8400A uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and low power


    Original     		PDF HY62U8400A 512Kx8bit 32pin 525mil

    HY628400A

    Abstract: HY628400ALG HY628400ALLG HY628400ALLR2 HY628400ALLT2 HY628400ALR2 HY628400ALT2
    Text: HY628400A Series 512Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY628400A is a high-speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits. The HY628400A uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and


    Original     		PDF HY628400A 512Kx8bit HY628400A 0/Jan99 32pin 525mil HY628400ALG HY628400ALLG HY628400ALLR2 HY628400ALLT2 HY628400ALR2 HY628400ALT2

    VDR 0047

    Abstract: No abstract text available
    Text: HY63V8400 Series 512Kx8bit CMOS FAST SRAM PRELIMINARY DESCRIPTION FEATURES The HY63V8400 is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8-bits. The HY63V8400 uses eight common input and output lines and has an output enable pin which operates faster than.


    Original     		PDF HY63V8400 512Kx8bit 304-bit 44pin 400mil 10MAX 004MAX 36pin VDR 0047

    BU 3150

    Abstract: No abstract text available
    Text: HY62UF8400A/ HY62QF8400A/ HY62SF8400A/ Series 512Kx8bit full CMOS SRAM FEATURES DESCRIPTION • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup LL/SL-part - 1.2V(min) data retention • Standard pin configuration


    Original     		PDF HY62UF8400A/ HY62QF8400A/ HY62SF8400A/ 512Kx8bit 48ball HY62UF8400A HY62QF8400A HY62EF8400A HY62SF8400A HY62UF8400A BU 3150

    VDR 0047

    Abstract: No abstract text available
    Text: HY62V8400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 3.3V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 03 Revision History Insert Revised - Improved standby current Isb1 : 30uA ¡ æ20uA Jul.06.2000 Final 04 Revised


    Original     		PDF HY62V8400A 512Kx8bit HY62V8400A VDR 0047

    Untitled

    Abstract: No abstract text available
    Text: HY63V8400 Series 512Kx8bit CMOS FAST SRAM PRELIMINARY DESCRIPTION FEATURES The HY63V8400 is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8-bits. The HY63V8400 uses eight common input and output lines and has an output enable pin which operates faster than.


    Original     		PDF HY63V8400 512Kx8bit 304-bit 44pin 400mil 10MAX 004MAX 36pin

    Untitled

    Abstract: No abstract text available
    Text: HY62UF8400A Series 512Kx8bit full CMOS SRAM FEATURES DESCRIPTION • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup -. 1.2V min data retention • Standard pin configuration -. 36-ball uBGA The HY62UF8400A is a high speed, super low


    Original     		PDF HY62UF8400A 512Kx8bit 36-ball 36ball 5M-1994.

    Untitled

    Abstract: No abstract text available
    Text: HY628400A Series 512Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY628400A is a high-speed, low power and 4M bits CMOS SRAM organized as 512K words by 8 bits. The HY628400A uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and low power


    Original     		PDF HY628400A 512Kx8bit 32pin 525mil

    Untitled

    Abstract: No abstract text available
    Text: HY62SF8400A Series 512Kx8bit full CMOS SRAM DESCRIPTION FEATURES The HY62SF8400A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 512K words by 8bits. The HY62SF8400A uses high performance full CMOS process technology and is designed for high speed and low power


    Original     		PDF HY62SF8400A 512Kx8bit 36-ball 36ball 5M-1994.

    VDR 0047

    Abstract: No abstract text available
    Text: HY62U8400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 3.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 04 Revision History Insert Revised - Insert 70ns Part - Improved standby current Isb1 : 30uA ¡ æ20uA Jul.26.2000


    Original     		PDF HY62U8400A 512Kx8bit 15ns/20ns HY62U8400A 100ns VDR 0047

    HY628400LLG

    Abstract: VDR 0047 HY628400LLT2-55 HY628400 HY628400LG CMOS 4060 512Kx8bit
    Text: HY628400 Series 512Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY628400 is a high-speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits. The HY628400 uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and


    Original     		PDF HY628400 512Kx8bit HY628400 Full80) 04/Jan99 32pin 525mil HY628400LLG VDR 0047 HY628400LLT2-55 HY628400LG CMOS 4060

    Untitled

    Abstract: No abstract text available
    Text: HY628400 Series •'H Y U N D A I 512Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY628400 is a high-speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits. The HY628400 uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and


    OCR Scan     		PDF HY628400 512Kx8bit HY628400 04/0ct 32pin 525mil

    KM29N040T

    Abstract: 741 IC data sheet bhrb data sheet IC 741 KM29N04 samsung flash bad block mapping
    Text: KM29N040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array - Data Register Its NAND cell structure provides the most cost-effective


    OCR Scan     		PDF KM29N040T 512Kx8 500us 400mil/0 KM29N040T 512Kx8bit KM29N040 KM29N040T) 7TL4142 741 IC data sheet bhrb data sheet IC 741 KM29N04 samsung flash bad block mapping

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM29V040T FLASH MEMORY 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply The KM29V040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array : 512K x8 Its NAND cell structure provides the most cost-effective


    OCR Scan     		PDF KM29V040T 512Kx8Bit KM29V040T 32-byte 500us 120ns/byte.

    R10-T

    Abstract: No abstract text available
    Text: PRELIMINARY KM29N040T FLASH MEMORY 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply • Organization - Memory Cell Array : 512Kx8 - Data Register 32 x 8 bit • Automatic Program and Erase Typical - Frame Program : 32 Byte in 500us


    OCR Scan     		PDF KM29N040T 512Kx8Bit 512Kx8 500us 400mil/0 KM29N040T KM29N040 -TSOP2-400F -TSQP2-400R R10-T

    JTW 3D

    Abstract: No abstract text available
    Text: M v T h I I ü i k i i 11 U A HY62V8400A- I /HY62U8400A-(I) Series I 512Kx8bit CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62V8400A-(I)/HY62U8400A-(I) is a high­ speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits. The HY62V8400A-(I)/HY62U8400A-(I) uses Hyundai's


    OCR Scan     		PDF HY62V8400A- /HY62U8400A- 512Kx8bit HY62V8400A HY62V8400A-I HY62U8400A JTW 3D

    HY628400LL

    Abstract: No abstract text available
    Text: HY628400 Series • H Y U N D A 512Kx8bit CM OS SRAM I DESCRIPTION FEATURES The HY628400 is a high-speed, low power and 4M bits C M O S S R A M organized as 524,288 words by 8 bits. The HY628400 uses Hyundai's high performance twin tub C M O S process technology


    OCR Scan     		PDF HY628400 512Kx8bit 11f350) 32pin 525mil 04K3cL97 HY628400LL

    29V040

    Abstract: No abstract text available
    Text: PRELIMINARY KM29V040T FLASH MEMORY 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply • Organization - Memory Cell Array : 512Kx8 - Data Register : 32 x 8 bit • Automatic Program and Erase Typical - Frame Program : 32 Byte in 500us


    OCR Scan     		PDF KM29V040T 512Kx8Bit 512Kx8 500us 400mil/0 KM29V040T KM29V040 -TSOP2-400F -TSQP2-400R 29V040

    Untitled

    Abstract: No abstract text available
    Text: KM29V040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply The KM29V040T is a 512Kx8bit NAND Flash memory. Its NAND cell structure provides the most cost-effective solution for Digital Audio Recoding. A program


    OCR Scan     		PDF KM29V040T 512Kx8Bit KM29V040T 32-byte 500us 120ns/byte. KM29V040

    HY628400LLT1

    Abstract: LA4500 628-400 628400 HY628400LP
    Text: HY 628400- i • H Y U N D A I Series 512Kx8bit C M O S SRAM DESCRIPTION FEATURES Fully static operation and Tri-state outputs TTL compatible inputs and outputs Low power consumption Battery backup(L/LL-part) - 2.0V(min) data retention Standard pin configuration


    OCR Scan     		PDF 512Kx8bit HY628400/HY628400-I HY628400/ HY628400-I 32pin 400mil HY628400LLT1 LA4500 628-400 628400 HY628400LP

    Untitled

    Abstract: No abstract text available
    Text: HY62U8400A- i -HYUNDAI Series 512Kx8bit CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62U8400A/HY62U8400A-I is a high­ speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits. The HY62U8400A/HY62U8400A-I uses Hyundai's high performance twin tub CMOS process technology


    OCR Scan     		PDF HY62U8400A/HY62U8400A-I HY62U8400A- 512Kx8bit 32pin 400mil