517AF Search Results

UDFN16

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UDFN16, 3.5x1.2, 0.4P CASE 517AF−01 ISSUE B 16 DATE 18 MAY 2007 1 SCALE 4:1 0.10 C ÏÏÏ ÏÏÏ PIN ONE REFERENCE 2X 0.10 C ÏÏ ÎÎ ÏÏ A3 A B D 2X E A1 DETAIL A TOP VIEW A3 DETAIL A A 0.10 C 16X SEATING PLANE

Bluetooth working principle

Abstract: NUF6010MU NUF8010MU NUF8010MUT2G UDFN16
Contextual Info: NUF8010MU 8-Channel EMI Filter with Integrated ESD Protection The NUF8010MU is a eight−channel C−R−C Pi−style EMI filter array with integrated ESD protection. Its typical component values of R = 100 W and C = 7 pF deliver a cutoff frequency of 215 MHz and

NUF8010MU

Abstract: NUF8010MUT2G UDFN16 NUF8010
Contextual Info: NUF8010MU Low Capacitance 8 Line EMI Filter with ESD Protection in UDFN Package This device is an 8 line EMI filter array for wireless applications. Greater than -20 dB typical attenuation is obtained at frequencies from 800 MHz to 5.0 GHz. The NUF8010MU has a typical cut-off frequency

NUF8001MU

Abstract: NUF8001MUT2G UDFN16
Contextual Info: NUF8001MU Low Capacitance 8 Line EMI Filter with ESD Protection in UDFN Package This device is an 8 line EMI filter array for wireless applications. Greater than -25 dB attenuation is obtained at frequencies from 800 MHz to 5.0 GHz. The NUF8001MU has a cut- off frequency of 160 MHz and

Contextual Info: NUF8010MU 8-Channel EMI Filter with Integrated ESD Protection The NUF8010MU is a eight−channel C−R−C Pi−style EMI filter array with integrated ESD protection. Its typical component values of R = 100 W and C = 7 pF deliver a cutoff frequency of 215 MHz and

NUF8001MU

Abstract: NUF8001MUT2G UDFN16
Contextual Info: NUF8001MU 8-Channel EMI Filter with Integrated ESD Protection The NUF8001MU is a eight−channel C−R−C Pi−style EMI filter array with integrated ESD protection. Its typical component values of R = 100 W and C = 12 pF deliver a cutoff frequency of 160 MHz and

NUF8001MU

Abstract: NUF8001MUT2G UDFN16
Contextual Info: NUF8001MU Low Capacitance 8 Line EMI Filter with ESD Protection in UDFN Package This device is an 8 line EMI filter array for wireless applications. Greater than −25 dB attenuation is obtained at frequencies from 800 MHz to 5.0 GHz. The NUF8001MU has a cut−off frequency of 160 MHz and

free mobile phone circuit diagram

Abstract: NUF8000MU NUF8000MUT2G UDFN16
Contextual Info: NUF8000MU Low Capacitance 8 Line EMI Filter with ESD Protection in UDFN Package This device is an 8 line EMI filter array for wireless applications. Greater than -30 dB typical attenuation is obtained at frequencies from 800 MHz to 5.0 GHz. The NUF8000MU has a typical cut-off frequency

Contextual Info: NUF8001MU 8-Channel EMI Filter with Integrated ESD Protection The NUF8001MU is a eight−channel C−R−C Pi−style EMI filter array with integrated ESD protection. Its typical component values of R = 100 W and C = 12 pF deliver a cutoff frequency of 160 MHz and

NUF8152MUT2G

Abstract: UDFN16 diode 10e
Contextual Info: NUF8152MU 8 Line LCD & Camera EMI Filter with ESD Protection NUF8152MU is an 8 line LRC EMI filter array designed for LCD and camera portable applications. It provides superior attenuation at frequencies from 800 MHz to 3.0 GHz and offers ESD protection-clamping transients from static discharges. Housed in a

Contextual Info: NUF8152, SZNUF8152 8-Channel EMI Filter with Integrated ESD Protection The NUF8152MU is a eight−channel C−L−R−C Pi−style EMI filter array with integrated ESD protection. Its typical component values of R = 28 W, C = 17 pF and L = 1.0 nH deliver a cutoff

SZNUF8152MUT2G

Contextual Info: NUF8152, SZNUF8152 8-Channel EMI Filter with Integrated ESD Protection The NUF8152MU is a eight−channel C−L−R−C Pi−style EMI filter array with integrated ESD protection. Its typical component values of R = 28 W, C = 17 pF and L = 1.0 nH deliver a cutoff

NUF8152MUT2G

Abstract: UDFN16
Contextual Info: NUF8152MU 8-Channel EMI Filter with Integrated ESD Protection The NUF8152MU is a eight−channel C−L−R−C Pi−style EMI filter array with integrated ESD protection. Its typical component values of R = 28 W, C = 17 pF and L = 1.0 nH deliver a cutoff

STP4119

Abstract: Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a
Contextual Info: ON Semiconductor Master Components Selector Guide Power Management, Amplifiers and Comparators, Analog Switches, Thyristors, Diodes, Rectifiers, Bipolar Transistors, FETs, Circuit Protection, Clock and Data Management, Interface, and Standard Logic Devices