52-PIN TSOP Search Results

Contextual Info: 52 Pin to 56 Pin DIP Adapters ACCUTEK MICROCIRCUIT CORPORATION DIP ADAPTER MODULES ELIMINATE THE NEED TO REDESIGN MOTHERBOARDS OR MAY BE USED FOR BREADBOARD PROTOTYPING DESCRIPTION This new family of Accutek DIP Adapter Modules converts surface mount IC’s to pin compatible DIP packages for creating drop-in replacements for end-of-life DIP IC’s. Package types supported are:

ic 40 pin

Abstract: mxic HT
Contextual Info: Noac 20-PIN CERDIP MSI WITH WINDOW (600 mil) MILLIMETERS INCHES 37.34 max 1.470 max B 2.03 [REF] .080 [REF] C 2.54 [TP] .100 [TP] D .46 [Typ.] .018 [Typ.] E 32.99 1.300 F 1-52 [Typ.] .060 [Typ.] Q 3.30 ± .25 .130 ±.010 H .51 (REF] .020 [REF] I 3.94 ± .25

K4S280832B

Contextual Info: K4S280832B CMOS SDRAM PIN CONFIGURATION Top view VDD DQ0 VDDQ N.C DQ1 VSSQ N.C DQ2 VDDQ N.C DQ3 VSSQ N.C VDD N.C WE CAS RAS CS BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47

TSOP-6

Abstract: marking A1 4 PIN marking 52 Marking 52 tsop 6 TSOP 6 marking 52 E5 Marking marking A1 6 E1 M02
Contextual Info: SEMICONDUCTOR KMA2D7DP20X MARKING SPECIFICATION TSOP-6 PACKAGE 1. Marking method Laser Marking. 2. Marking M02 1 01 2 3 No. Item Marking Description Device Mark M02 KMA2D7DP20X * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1

KMA2D8P20X

Abstract: Marking 52 tsop 6 marking A1 6
Contextual Info: SEMICONDUCTOR KMA2D8P20X MARKING SPECIFICATION TSOP-6 PACKAGE 1. Marking method Laser Marking. 2. Marking M05 1 01 2 3 No. Item Marking Description Device Mark M05 KMA2D8P20X * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1

Contextual Info: DRAM MODULE KMM332V224AT KMM332V224AT Fast Page Mode 2Mx32 DRAM DIMM Low Power, 1K Refresh, 3.3V GENERAL DESCRIPTION The Samsung KMM332V224AT is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM332V224AT consists of four CMOS 1Mx16bit DRAMs in 44-pin TSOPII packages

Contextual Info: DENSE-PAC o vi i c R 512 Megabit CMOS DRAM DPD16MS32RW s y s r i: m s PIN-OUT DIAGRAM DESCRIPTION: The DPD16MS32RW is the 16 Meg x 32 Dynamic RAM module in the family of modules that utilize the space saving TSOP technology. The module is constructed of eight 16M x 4 dynamic RAM surface mounted on an industry standard 72-pin

Contextual Info: UG58E642 4 4GJ(T)L 64M Bytes (8M x 64) DRAM 168Pin DIMM based on 4M x 4 General Description Features The UG58E642(4)4GJ(T)L is a 8,388,608 bits by 64 EDO DRAM module. The UG58E642(4)4GJ(T)L is assembled using 32 pcs of 4Mx4 2K/4K refresh DRAMs in 300mil SOJ/TSOP package, and

Datasheet-03/HY51174048

Contextual Info: •HYUNDAI HYM532414B M-Series 4M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414B is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 jaF and 0.01 decoupling capacitors are mounted

Contextual Info: HYUNDAI HYM540A400 M-Series 4M x 40-blt CMOS DRAM MODULE PREUMINARY DESCRIPTION The HYM540A400 is a 4M x 40-blt Fast page mode CMOS DRAM module consisting of ten HY5116400 in 24/28 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.22^ F decoupling capacitor Is mounted for

HSD32M64F8R

Abstract: HSD32M64F8R-10 HSD32M64F8R-10L HSD32M64F8R-13 cs359
Contextual Info: HANBit HSD32M64F8R Synchronous DRAM Module 256Mbyte 32Mx64bit , SMM ,16Mx16, 4Banks, 8K Ref. 3.3V Part No. HSD32M64F8R GENERAL DESCRIPTION The HSD32M64F8R is a 32M x 64 bit Synchronous Dynamic RAM high-density memory module. The module consists of eight CMOS 16M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages and 2K EEPROM in 8-pin

P-Channel MOSFET code 1A

Abstract: P-channel Trench MOSFET Bi-Directional P-Channel mosfet SPC6801 SPC6801ST6RG 6P marking P-channel MOSFET VGS -25V
Contextual Info: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect

HYM53

Contextual Info: • HYUNDAI HYM536A810A M-Series 8M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536A81OA is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of eighteen HY5117400A in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each

Contextual Info: HYM532414A M-Series •HYUNDAI 4M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414A is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 ^decoupling capacitors are mounted

Contextual Info: HB56UW264DB-6B/7B/8B 2,097,152-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-483B Z Rev.2.0 Apr. 19, 1996 Description The HB56UW264DB is a 2M x 64 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 8 pieces of 16-Mbit DRAM (HM51W17805BTT) sealed in TSOP package and 1

CIC-56TS-48D-B6-YAM-S

Abstract: cic56ts48d-b6-yam
Contextual Info: CIC-56TS-48D-B6-YAM-S REV 2 56-Lead TSOP to a 48-Pin DIP 6/97 (EXAMPLES) TSOP DEVICES: PIN CONFIGURATION: E28F016XS SOCKET: Yamaichi IC191-0562-003N QTY PRICE EACH 1-4 5-9 10-24 25-49 $200.00 $180.00 $170.00 $150.00 PRICING: TYPICAL DIMENSIONS: (Drawings not to scale)

Contextual Info: CIC-56TS-40D-D6-YAM-S REV 2 56-Lead TSOP to a 40-Pin DIP 7/97 (EXAMPLES) TSOP DEVICES: PIN CONFIGURATION: A BASE 40-Pin DIP E28F016XS TE28F160S3 / S5 B (TE extended temp range) SOCKET: Yamaichi IC191-0562-003N PRICING: QTY PRICE EACH 1-4 5-9 10-24 25-49

Contextual Info: -HYUNDAI HYM536A814B M-Series 8M X 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM536A814B is a 8M x 36-bit EDO mode CMOS DRAM module consisting of eighteen HY5117404B in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 iiF and 0.01 nFdecoupling capacitors are mounted

Contextual Info: HYM540A410 M-Series •HYUNDAI 4M x 40-bit C M O S DRAM MODULE P R ELIM IN A R Y DESCRIPTION The HYM540A410 is a 4M x 40-bit Fast page mode C M O S DRAM module consisting of ten HY5117400 in 24/28 pin SO J or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.22jiF decoupling capacitor is mounted for

Contextual Info: ^HYUNDAI HYM564224A R-Series Unbuffered 2M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM564224A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY5118164B in 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 ¡aF and

Contextual Info: STI324000D2 72-PIN DIMMS 4M X 32 DRAM DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI324000D2 is a 4M bits x 32 Dynamic RAM high density memory module. The Simple Technology STI324000D2 consist of eight CMOS 2M x 8 bit DRAMs in 28pin TSOP package mounted on a 72-pin glass-epoxy substrate.

Contextual Info: PcRam TS8MDM3260 Description Features The TS8MDM3260 is a 8,388,608-word by 32-bit • 8,388,608-word by 32-bit organization. dynamic RAM card. This consists of 4 pcs 8Mx8-bit, • Fast Page Mode Operation. 5.0 volt, fast page mode DRAMs in TSOP • Single +5.0V ± 10% power supply.

Contextual Info: EDI7F88MB 8Megx8 8Megx8 Flash Module The EDI7F88MB is organized as a 8Mx8 Flash module. The module is based on Intel's E28F008551Megx8 Flash device in a TSOP package which is mounted on an FR4 substrate. Block Diagrams EDI7F88MB 8Megx8 The module offers access times between 90 and

E28F00855-1Megx8

Abstract: A1712 AN 5151 28F008S5 EDI7F88MB100S EDI7F88MB120S EDI7F88MB90S
Contextual Info: EDI7F88MB 8Meg x 8 Flash Module FIG. 1 BLOCK DIAGRAM EDI7F88MB 8Mx8 DESCRIPTION The EDI7F88MB is organized as a 8Mx8 Flash module. The module is based on Intel's E28F00855-1Megx8 Flash device in a TSOP package which is mounted on an FR4 substrate. A0-A9 W