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TE Connectivity AV2520MA12T5Q04SWITCH PUSHBUTTON DPDT 3A 250V |
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AV2520MA12T5Q04 | Box | 62 | 1 |
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AV2520MA12T5Q04 | Bulk | 111 Weeks | 100 |
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AV2520MA12T5Q04 |
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AV2520MA12T5Q04 | Bulk | 100 |
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AV2520MA12T5Q04 | 4 |
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TT electronics / BI Technologies PS15-20MA1AR5KSLIDE POTENTIOMETER |
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PS15-20MA1AR5K | Tray | 6,000 |
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PS15-20MA1AR5K | 1,500 |
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TT electronics / BI Technologies PS15-20MA1CR2KSLIDE POTENTIOMETER |
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PS15-20MA1CR2K | Tray | 6,000 |
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PS15-20MA1CR2K | 1,500 |
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TT electronics / BI Technologies PS45-20MA1CR5KSLIDE POTENTIOMETER |
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PS45-20MA1CR5K | Tray | 3,900 |
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PS45-20MA1CR5K | 780 |
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TT electronics / BI Technologies PS45-20MA1AR2KSLIDE POTENTIOMETER |
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PS45-20MA1AR2K | Tray | 3,900 |
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PS45-20MA1AR2K | 780 |
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520MA Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRC1608T1R0M Features Item Summary 1.0 H(±20%), 850mA, 520mA, 0603 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions |
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BRC1608T1R0M 850mA, 520mA, 3000pcs 96MHz 850mA 520mA 140MHz | |
CB2012T100KContextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2012T100KR Features Item Summary 10 H(±10%), 200mA, 520mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions |
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CB2012T100KR 200mA, 520mA, 3000pcs 52MHz 200mA 520mA 32MHz CB2012T100K | |
Contextual Info: STT2622 520mA, 50V,RDS ON 1.8Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Description The STT2622 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. |
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STT2622 520mA, STT2622 OT-26 01-Jun-2002 | |
GTT2622Contextual Info: Pb Free Plating Product ISSUED DATE :2006/03/28 REVISED DATE : GTT2622 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 50V 1.8 520mA Description The GTT2622 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. |
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GTT2622 520mA GTT2622 | |
Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBC2012T4R7M Features Item Summary 4.7 H(±20%), 360mA, 520mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions |
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CBC2012T4R7M 360mA, 520mA, 3000pcs 96MHz 360mA 520mA 45MHz | |
Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LBC2016T2R2M Features Item Summary 2.2 H(±20%), 520mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions |
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LBC2016T2R2M 520mA, 2000pcs 96MHz 520mA 70MHz | |
Contextual Info: AP2622GY-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D1 D2 Small Package Outline Surface Mount Package G1 G2 BVDSS 50V RDS ON 1.8 ID 520mA RoHS Compliant S2 S1 Description D2 Advanced Power MOSFETs utilized advanced processing techniques to |
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AP2622GY-HF 520mA OT-26 OT-26 100ms | |
Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Inductors for Signal Lines LB series M type / LE series M type LEM2520TR12K Features Item Summary 0.12 H(±10%), 520mA, 1008 Lifecycle Stage Phaseout Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table |
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LEM2520TR12K 520mA, 2000pcs 520mA 600MHz 30min | |
el inverter
Abstract: INVERTER CIRCUIT el inverter circuit 620 diode Inverter application note led inverter inverter
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12vDC. 520ma 115Vrms PC5602 el inverter INVERTER CIRCUIT el inverter circuit 620 diode Inverter application note led inverter inverter | |
Contextual Info: Advanced Power Electronics Corp. AP2622GY-HF-3 Dual N-channel Enhancement-mode Power MOSFET Independent, Symmetrical Dual MOSFETs BV DSS Low Gate Charge D2 D1 Small surface-mount package 50V R DS ON 1.8Ω ID RoHS-compliant, halogen-free 520mA G2 G1 S1 Description |
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AP2622GY-HF-3 520mA OT-26 OT-26 12REF 37REF 90REF 20REF | |
Contextual Info: SST2622 520mA, 50V,RDS ON 1.8Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET SOT-26 Description 0.20 0.37Ref. The SST2622 utiltzed advance processing techniques to achieve the lowest 0.60 Ref. 2.60 3.00 possible on-resistance, extermely efficient and cost-effectiveness device. |
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SST2622 520mA, OT-26 37Ref. SST2622 OT-26 20Ref. 01-Jun-2002 | |
Contextual Info: Spec Sheet INDUCTORS High Reliability Application Wire-wound Chip Inductors for Industrial / Automotive Comfort and Safety Applications (CB series) CB2016T100KV Features Item Summary 10 H(±10%), 250mA, 520mA, 0806 Lifecycle Stage Mass Production AEC-Q200 qualified |
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CB2016T100KV 250mA, 520mA, AEC-Q200 2000pcs 52MHz 250mA 520mA | |
Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2016T100K Features Item Summary 10 H(±10%), 250mA, 520mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions |
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CB2016T100K 250mA, 520mA, 2000pcs 52MHz 250mA 520mA 32MHz | |
Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Inductors for Signal Lines LB series M type / LE series M type LBM2016TR22J Features Item Summary 0.22 H(±5%), 520mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table |
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LBM2016TR22J 520mA, 2000pcs 520mA 450MHz 30min | |
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Contextual Info: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series HKQ0603S0N9C-T Features Item Summary 0.9nH(-0.2nH to +0.2nH), 520mA, 13, 0201 Lifecycle Stage Mass Production Standard packaging quantity (minimum) |
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HKQ0603S0N9C-T 520mA, 15000pcs 500MHz 520mA 10000MHz 13min | |
Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2012T100KR Features Item Summary 10 H(±10%), 200mA, 520mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions |
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CB2012T100KR 200mA, 520mA, 3000pcs 52MHz 200mA 520mA 32MHz | |
Contextual Info: EPCOS P T C T h e rm is to rs T h erm isto r for m oto r protection <bOL7 — H -1 0 CJ ' E m 520max ^NAT fip T C I ’n a t - 5 K =c O r d e r in g c o d e U PTC < 2 , 5 V _a M in . q ty . M ax. q ty - ! I ’n a t ' i + 5 K a i I V * = 30 V, R r < 100 Q |
OCR Scan |
520max 59100-M 080-A 100-A 120-A 130-A 150-A | |
Contextual Info: AP2622GY RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D1 D2 Small Package Outline Surface Mount Package G1 G2 BVDSS 50V RDS ON 1.8 ID 520mA RoHS Compliant S2 S1 Description D2 Advanced Power MOSFETs utilized advanced processing techniques to |
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AP2622GY 520mA OT-26 OT-26 100ms | |
WTL2622Contextual Info: WTL2622 Dual N-Channel Enhancement Mode MOSFET 6 DRAIN P b Lead Pb -Free DRAIN CURRENT 520mAMPERES DRAIN SOURCE VOLTAGE 50 VOLTAGE 1 GATE 5 SOURCE Features: 6 4 DRAIN * Low Gate charge * Surface Mount Package 1 2 5 4 3 SOT-26 3 GATE 2 SOURCE Maximum Ratings (TA |
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WTL2622 520mAMPERES OT-26 300us, 19-Sep-05 WTL2622 | |
Contextual Info: Spec Sheet INDUCTORS High Reliability Application SMD Power Inductors for Industrial / Automotive Comfort and Safety Applications (NR series H type / V type / S type) NRS6012T470MMGJV Features Item Summary 47 H(±20%), 520mA, 460mA Lifecycle Stage Mass Production |
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NRS6012T470MMGJV 520mA, 460mA AEC-Q200 1000pcs 100kHz 520mA | |
Contextual Info: iV I V U K ' LED BACKLIGHT FOR LCD DISPLAY U ABSOLUTE MAXIMUM RATINGS Forward Current Reverse Voltage Operating Temperature Storage Temperature 520mA 10V -20 to +70°C -30 to +80°C If Vr TQpr Tstg ELECTRO-OPTICAL CHARACTERISTICS PARAMETER Forward Voltage |
OCR Scan |
520mA 260mA | |
Contextual Info: Spec Sheet INDUCTORS High Reliability Application SMD Power Inductors for Industrial / Automotive Comfort and Safety Applications (NR series H type / V type / S type) NRS6012T470MMGJV Features Item Summary 47 H(±20%), 520mA, 460mA Lifecycle Stage Mass Production |
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NRS6012T470MMGJV 520mA, 460mA AEC-Q200 1000pcs 100kHz 520mA | |
Contextual Info: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS6012T470MMGJ Features Item Summary 47 H(±20%), 520mA, 460mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions |
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NRS6012T470MMGJ 520mA, 460mA 1000pcs 100kHz 520mA | |
08VGContextual Info: AP2622GY RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D1 D2 ▼ Small Package Outline ▼ Surface Mount Package G1 G2 BVDSS 50V RDS ON 1.8Ω ID 520mA ▼ RoHS Compliant S2 S1 Description |
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AP2622GY 520mA OT-26 OT-26 100us 100ms 08VG |