520V N-CHANNEL MOSFET Search Results

D5NK5

Abstract: P5NK52ZD P5NK52 STD5N STP5NK52ZD zener diode B5 JESD97 STB5NK52ZD-1 STD5NK52ZD STD5NK52ZD-1
Contextual Info: STP5NK52ZD - STB5NK52ZD-1 STD5NK52ZD - STD5NK52ZD-1 N-channel 520V - 1.22Ω - 4.4A - TO-220 - DPAK - I2PAK - IPAK Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw STB5NK52ZD-1 520V <1.5Ω 4.4A 70W STD5NK52ZD 520V <1.5Ω

IRFR410B

Abstract: IRFU410B
Contextual Info: IRFR410B / IRFU410B 520V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

SSP1N50B

Contextual Info: SSP1N50B SSP1N50B 520V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

SSI1N50B

Abstract: SSW1N50B Supersot6
Contextual Info: SSW1N50B / SSI1N50B SSW1N50B / SSI1N50B 520V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

SSU1N50A

Abstract: transistors substitute SSR1N50BTF
Contextual Info: SSR1N50B / SSU1N50B SSR1N50B / SSU1N50B 520V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

SSR1N50B

Abstract: SSU1N50B
Contextual Info: SSR1N50B / SSU1N50B SSR1N50B / SSU1N50B 520V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: SSU1N50B 520V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

D5NK5

Abstract: P5NK52 STP5NK52ZD
Contextual Info: STP5NK52ZD - STB5NK52ZD-1 STD5NK52ZD - STD5NK52ZD-1 N-CHANNEL 520V - 1.22Ω - 4.4A TO-220-DPAK-IPAK-I2PAK SuperFREDMesh MOSFET TARGET SPECIFICATION Table 1: General Features TYPE STB5NK52ZD-1 STD5NK52ZD STD5NK52ZD-1 STP5NK52ZD • ■ ■ ■ ■ ■ ■

p5nk52zd

Abstract: D5NK5
Contextual Info: STP5NK52ZD - STB5NK52ZD-1 STD5NK52ZD - STD5NK52ZD-1 N-CHANNEL 520V - 1.22Ω - 4.4A TO-220-DPAK-IPAK-I2PAK SuperFREDMesh MOSFET TARGET SPECIFICATION Table 1: General Features TYPE STB5NK52ZD-1 STD5NK52ZD STD5NK52ZD-1 STP5NK52ZD • ■ ■ ■ ■ ■ ■

P5NK52

Abstract: D5NK5 p5nk52zd STP5NK52ZD STD5NK52ZD-1 B5NK52ZD p5nk52Z
Contextual Info: STP5NK52ZD - STB5NK52ZD-1 STD5NK52ZD - STD5NK52ZD-1 N-CHANNEL 520V - 1.22Ω - 4.4A TO-220-DPAK-IPAK-I2PAK SuperFREDMesh MOSFET TARGET SPECIFICATION Table 1: General Features TYPE STB5NK52ZD-1 STD5NK52ZD STD5NK52ZD-1 STP5NK52ZD • ■ ■ ■ ■ ■ ■

Contextual Info: AOD9N52 520V,9A N-Channel MOSFET General Description Product Summary The AOD9N52 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS on , Ciss and Crss along with

Contextual Info: AOD9N52 520V,9A N-Channel MOSFET General Description Product Summary The AOD9N52 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS on , Ciss and Crss along with

Contextual Info: SSFP7N65 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 650V Simple Drive Requirement ID25 = 7A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability

KF12N68

Abstract: KF12N68F
Contextual Info: SEMICONDUCTOR KF12N68F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

KF7N65

Contextual Info: SEMICONDUCTOR KF7N65FM TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

Contextual Info: SEMICONDUCTOR KF4N65FM TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

KF10N68

Abstract: KF10N68F NSC10
Contextual Info: SEMICONDUCTOR KF10N68F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

Contextual Info: SEMICONDUCTOR KF7N68F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

KF5N65

Contextual Info: SEMICONDUCTOR KF5N65D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N65D This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for

Contextual Info: SEMICONDUCTOR KF10N68F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

Planar

Abstract: KF12N68F
Contextual Info: SEMICONDUCTOR KF12N68F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

Contextual Info: SEMICONDUCTOR KP8N65D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KP8N60D This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

MOSFET

Abstract: Planar KF10N65F
Contextual Info: SEMICONDUCTOR KF10N65F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

KF7N68F

Abstract: Diode is 10-16
Contextual Info: SEMICONDUCTOR KF7N68F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor