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    520V N-CHANNEL MOSFET Search Results

    520V N-CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    520V N-CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D5NK5

    Abstract: P5NK52ZD P5NK52 STD5N STP5NK52ZD zener diode B5 JESD97 STB5NK52ZD-1 STD5NK52ZD STD5NK52ZD-1
    Text: STP5NK52ZD - STB5NK52ZD-1 STD5NK52ZD - STD5NK52ZD-1 N-channel 520V - 1.22Ω - 4.4A - TO-220 - DPAK - I2PAK - IPAK Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw STB5NK52ZD-1 520V <1.5Ω 4.4A 70W STD5NK52ZD 520V <1.5Ω


    Original     		PDF STP5NK52ZD STB5NK52ZD-1 STD5NK52ZD STD5NK52ZD-1 O-220 STD5NK52ZD STP5NK52ZD O-220 D5NK5 P5NK52ZD P5NK52 STD5N zener diode B5 JESD97 STB5NK52ZD-1 STD5NK52ZD-1

    IRFR410B

    Abstract: IRFU410B
    Text: IRFR410B / IRFU410B 520V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR410B IRFU410B IRFU410B

    SSP1N50B

    Abstract: No abstract text available
    Text: SSP1N50B SSP1N50B 520V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF SSP1N50B SSP1N50B

    SSI1N50B

    Abstract: SSW1N50B Supersot6
    Text: SSW1N50B / SSI1N50B SSW1N50B / SSI1N50B 520V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF SSW1N50B SSI1N50B SSI1N50B Supersot6

    SSU1N50A

    Abstract: transistors substitute SSR1N50BTF
    Text: SSR1N50B / SSU1N50B SSR1N50B / SSU1N50B 520V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF SSR1N50B SSU1N50B SSU1N50B SSU1N50A SSU1N50BTU O-251 SSU1N50A transistors substitute SSR1N50BTF

    SSR1N50B

    Abstract: SSU1N50B
    Text: SSR1N50B / SSU1N50B SSR1N50B / SSU1N50B 520V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF SSR1N50B SSU1N50B SSU1N50B

    Untitled

    Abstract: No abstract text available
    Text: SSU1N50B 520V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		PDF SSU1N50B

    D5NK5

    Abstract: P5NK52 STP5NK52ZD
    Text: STP5NK52ZD - STB5NK52ZD-1 STD5NK52ZD - STD5NK52ZD-1 N-CHANNEL 520V - 1.22Ω - 4.4A TO-220-DPAK-IPAK-I2PAK SuperFREDMesh MOSFET TARGET SPECIFICATION Table 1: General Features TYPE STB5NK52ZD-1 STD5NK52ZD STD5NK52ZD-1 STP5NK52ZD • ■ ■ ■ ■ ■ ■


    Original     		PDF STP5NK52ZD STB5NK52ZD-1 STD5NK52ZD STD5NK52ZD-1 O-220-DPAK-IPAK-I2PAK STD5NK52ZD-1 STP5NK52ZD O-220 D5NK5 P5NK52

    p5nk52zd

    Abstract: D5NK5
    Text: STP5NK52ZD - STB5NK52ZD-1 STD5NK52ZD - STD5NK52ZD-1 N-CHANNEL 520V - 1.22Ω - 4.4A TO-220-DPAK-IPAK-I2PAK SuperFREDMesh MOSFET TARGET SPECIFICATION Table 1: General Features TYPE STB5NK52ZD-1 STD5NK52ZD STD5NK52ZD-1 STP5NK52ZD • ■ ■ ■ ■ ■ ■


    Original     		PDF STP5NK52ZD STB5NK52ZD-1 STD5NK52ZD STD5NK52ZD-1 O-220-DPAK-IPAK-I2PAK STD5NK52ZD-1 STP5NK52ZD O-220 p5nk52zd D5NK5

    P5NK52

    Abstract: D5NK5 p5nk52zd STP5NK52ZD STD5NK52ZD-1 B5NK52ZD p5nk52Z
    Text: STP5NK52ZD - STB5NK52ZD-1 STD5NK52ZD - STD5NK52ZD-1 N-CHANNEL 520V - 1.22Ω - 4.4A TO-220-DPAK-IPAK-I2PAK SuperFREDMesh MOSFET TARGET SPECIFICATION Table 1: General Features TYPE STB5NK52ZD-1 STD5NK52ZD STD5NK52ZD-1 STP5NK52ZD • ■ ■ ■ ■ ■ ■


    Original     		PDF STP5NK52ZD STB5NK52ZD-1 STD5NK52ZD STD5NK52ZD-1 O-220-DPAK-IPAK-I2PAK STD5NK52ZD-1 STP5NK52ZD O-220 P5NK52 D5NK5 p5nk52zd B5NK52ZD p5nk52Z

    Untitled

    Abstract: No abstract text available
    Text: AOD9N52 520V,9A N-Channel MOSFET General Description Product Summary The AOD9N52 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS on , Ciss and Crss along with


    Original     		PDF AOD9N52 AOD9N52

    Untitled

    Abstract: No abstract text available
    Text: AOD9N52 520V,9A N-Channel MOSFET General Description Product Summary The AOD9N52 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS on , Ciss and Crss along with


    Original     		PDF AOD9N52 AOD9N52 19ABA

    Untitled

    Abstract: No abstract text available
    Text: SSFP7N65 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 650V Simple Drive Requirement ID25 = 7A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability


    Original     		PDF SSFP7N65 00A/s di/dt200A/S width300S;

    KF12N68

    Abstract: KF12N68F
    Text: SEMICONDUCTOR KF12N68F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original     		PDF KF12N68F Fig11. Fig12. Fig13. Fig14. KF12N68 KF12N68F

    KF7N65

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KF7N65FM TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original     		PDF KF7N65FM Fig13. Fig14. Fig15. KF7N65

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KF4N65FM TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original     		PDF KF4N65FM Fig12. Fig13. Fig14.

    KF10N68

    Abstract: KF10N68F NSC10
    Text: SEMICONDUCTOR KF10N68F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original     		PDF KF10N68F Fig12. Fig13. Fig14. Fig15. KF10N68 KF10N68F NSC10

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KF7N68F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original     		PDF KF7N68F Fig12. Fig13. Fig14.

    KF5N65

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KF5N65D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N65D This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for


    Original     		PDF KF5N65D/I KF5N65D Fig11. Fig15. KF5N65

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KF10N68F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original     		PDF KF10N68F Fig12. Fig13. Fig14.

    Planar

    Abstract: KF12N68F
    Text: SEMICONDUCTOR KF12N68F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original     		PDF KF12N68F Fig12. Fig13. Fig14. Planar KF12N68F

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KP8N65D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KP8N60D This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original     		PDF KP8N65D/I KP8N60D Fig13. Fig14. Fig15.

    MOSFET

    Abstract: Planar KF10N65F
    Text: SEMICONDUCTOR KF10N65F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original     		PDF KF10N65F Fig12. Fig13. Fig14. MOSFET Planar KF10N65F

    KF7N68F

    Abstract: Diode is 10-16
    Text: SEMICONDUCTOR KF7N68F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original     		PDF KF7N68F Fig11. Fig12. Fig13. Fig14. KF7N68F Diode is 10-16