524,288 9BIT Search Results

Contextual Info: 3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO 262,144x9 524,288 x 9 FEATURES: • Choose among the following memory organizations: IDT72V2101 262,144x9 IDT72V2111 524,288 x 9 • Pin-compatible with the IDT72V261/72V271 and the IDT72V281/72V291 SuperSync FIFOs

IDT72V2101

Abstract: IDT72V2111 IDT72V281 72V2101 72V2111 72V291
Contextual Info: 3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO 262,144 x 9 524,288 x 9 FEATURES: ♦ Choose among the following memory organizations: IDT72V2101 262,144 x 9 IDT72V2111 524,288 x 9 ♦ Pin-compatible with the IDT72V261/72V271 and the IDT72V281/ 72V291 SuperSync FIFOs

hm514900

Contextual Info: HM514900 S eries- Preliminary 524,288-Word x 9-Bit Dynamic Random Access Memory • DESCRIPTION HM514900JP Series The Hitachi HM514900 are CMOS dynamic RAM organized as 524,288-word x 9-bit. HM514900 have realized higher density, higher performance and various func­

72V2101

Abstract: 72V2111 72V291 IDT72V2101 IDT72V2111 IDT72V281
Contextual Info: 3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO 262,144 x 9 524,288 x 9 FEATURES: ♦ Choose among the following memory organizations: IDT72V2101  262,144 x 9 IDT72V2111  524,288 x 9 ♦ Pin-compatible with the IDT72V261/72V271 and the IDT72V281/ 72V291 SuperSync FIFOs

72V2101

Abstract: 72V2111 IDT72V2101 IDT72V2101L IDT72V2111 72V2111L10
Contextual Info: 3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO 262,144 x 9 524,288 x 9 PRELIMINARY IDT72V2101 IDT72V2111 Integrated Device Technology, Inc. FEATURES: • Choose among the following memory organizations: IDT72V2101 262,144 x 9 IDT72V2111 524,288 x 9 • Pin-compatible with the IDT72V261/72V271 and the

Contextual Info: HM514900A/AL, HM51S4900A/AL Series Preliminary 524,288-Word x 9-Bit Dynamic Random Access Memory • DESCRIPTION ■ FEATURES The Hitachi HM514900A are CMOS dynamic RAM orga­ nized as 524,288-word x 9-bit. HM514900A have realized higher density, higher performance and various functions by

Contextual Info: W? SEC NEC Electronics Inc. pPD424900A/L, 42S4900A/L 524,288 X 9-Bit Dynamic CMOS RAM Preliminary Information Description The /JPD424900A/L and ^PD42S4900A/L are fast-page dynamic RAMs organized as 524,288 words by 9 bits and designed to operate from a single power supply.

MSM514900CSL

Contextual Info: E2G0025-17-42 ¡ Semiconductor MSM514900C/CSL ¡ Semiconductor This MSM514900C/CSL version: Jan. 1998 Previous version: May 1997 524,288-Word ¥ 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514900C/CSL is a 524,288-word ¥ 9-bit dynamic RAM fabricated in Oki's silicon-gate

Contextual Info: IDT72V2101 IDT72V2111 3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO 262,144 x 9 524,288 x 9 FEATURES: • • • • • • • • • • • • • • • • Choose among the following memory organizations: IDT72V2101  262,144 x 9 IDT72V2111  524,288 x 9

HM514900AJ-7

Abstract: HM514900A HM514900AT HM514900ATT-7 Hitachi DSA00514 HM514900AJ7
Contextual Info: HM514900A/AL Series 524,288-word x 9-bit Dynamic Random Access Memory The Hitachi HM514900A are CMOS dynamic RAM organized as 524,288-word × 9-bit. HM514900A have realized higher density, higher performance and various functions by employing 0.8 µm CMOS process technology and some new

Contextual Info: IDT72V2101 IDT72V2111 3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO 262,144 x 9 524,288 x 9 FEATURES: • • • • • • • • • • • • • • • • Choose among the following memory organizations: IDT72V2101  262,144 x 9 IDT72V2111  524,288 x 9

SA9C

Contextual Info: i E C ELECTRONICS INC blE D LUh V NEC Electronics Inc. • b427525 0D337b3 2b4 BINECE fiPD424900A/L, 42S4900A/L 524,288 x 9-Blt Dynamic CMOS RAM T - Description The ¿/PD424900A/L and ^PD42S4900A/L are fast-page dynamic RAMs organized as 524,288 words by 9 bits

Contextual Info: O K I Semiconductor MSM514900 /SL_ 524,288-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514900/SL is a 524,288-word x 9-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514900/SL achieves high integration, high-speed operation, and low-power

MSM514900C

Abstract: MSM514900CSL TSOPII28-P-400-1
Contextual Info: E2G0025-17-42 ¡ Semiconductor MSM514900C/CSL ¡ Semiconductor This MSM514900C/CSL version: Jan. 1998 Previous version: May 1997 524,288-Word ¥ 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514900C/CSL is a 524,288-word ¥ 9-bit dynamic RAM fabricated in Oki's silicon-gate

Contextual Info: O K I Semiconductor E2G 0025-17-42 MSM514900C/CSL 524,288-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514900C/CSL is a 524,288-word x 9-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM514900C/CSL achieves high integration, high-speed operation, and

BB240-1

Abstract: 72T18105 72T18115 72T18125 IDT72T18105 IDT72T18115 IDT72T18125
Contextual Info: 2.5 VOLT HIGH-SPEED TeraSync FIFO 18-BIT/9-BIT CONFIGURATIONS 131,072 x 18/262,144 x 9 262,144 x 18/524,288 x 9 524,288 x 18/1,048,576 x 9 FEATURES: • • • • • • • • • • • • • • Choose among the following memory organizations:

Contextual Info: O K I Semiconductor MSM514900/SL 524,288-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE GENERAL DESCRIPTION The M SM 514900/SL is a new generation dynamic RAM organized as 524,288 words by 9 bits. The technology used to fabricate the MSM514900/SL is OKI's CMOS silicon gate process

Contextual Info: 2.5 VOLT HIGH-SPEED TeraSync FIFO 18-BIT/9-BIT CONFIGURATIONS 131,072 x 18/262,144 x 9 262,144 x 18/524,288 x 9 524,288 x 18/1,048,576 x 9 FEATURES: • • • • • • • • • • • • • • Choose among the following memory organizations:

Contextual Info: ¡ Semiconductor MSM514900C/CSL ¡ Semiconductor MSM514900C/CSL E2G0025-17-42 524,288-Word ¥ 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514900C/CSL is a 524,288-word ¥ 9-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM514900C/CSL achieves high integration, high-speed operation, and

ACP14

Contextual Info: HM514900A/AL, HM51S4900A/AL Series Preliminary 524,288-Word x 9-Bit Dynamic Random A c ce s s Memory • DESCRIPTION ■ FEATU R ES The Hitachi HM514900A are C M O S dynamic RAM orga­ nized as 524,288-word x 9-bit. HM514900A have realized higher density, higher performance and various functions by

SL8080

Contextual Info: O K I Sem iconductor MSM5 14 9 0 0 /SL_ 524,288-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514900/SL is a 524,288-word x 9-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514900/SL achieves high integration, high-speed operation, and low-power

Contextual Info: SONY CXK77V940GB - 8/ 10/12 524,288-Word by 9-bit High Speed CMOS Synchronous Static RAM P fQ U m jn Q fy Description The C XK77V940GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 524,288-w ords by 9-bits. This synchronous SRAM integrates input registers, high

Contextual Info: Preliminary FU JITSU MOS Memories • M B 8 5 2 1 1 -1 2 , M B 8 5 2 1 1 -1 5 524,288 X 4-Bit Dynamic Random Access Memory SIP Module The Fujitsu MB85211 is a fully decoded, 524,288 word x 4-bit NMOS dynamic random access memory module consisting of eight

Contextual Info: 3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO 262,144 x 9 524,288 x 9 FEATURES: • • • • • • • • • • • • • • • • Choose among the following memory organizations: IDT72V2101 ⎯ 262,144 x 9 IDT72V2111 ⎯ 524,288 x 9 Pin-compatible with the IDT72V261/72V271 and the IDT72V281/