5252 F MOSFET Search Results

5252 F mosfet

Abstract: 71009 Schematics 5250 SUM110N08-10 schematic 5250
Contextual Info: SPICE Device Model SUM110N08-10 Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

5252 F mosfet

Abstract: 5252 F Schematics 5250 SUM110N08-07
Contextual Info: SPICE Device Model SUM110N08-07 Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

toshiba smd marking

Abstract: SA MARKING SMD mos DONG YANG MOTOR kec smd marking smd marking S3A lg ultra slim tpc6004 TPC6001 TPC6002 TPC6005
Contextual Info: Power MOSFETs VS-6 Series PRODUCT GUIDE The four key features of the VS 4-1 Package 1 Ultra-thin package “ “ Toshiba have developed a new 6-pin SMD package for power MOSFETs known as the VS-6 . This package allows these devices to be used in compact, thin, lightweight, high-efficiency

TLP352

Abstract: 5252 F mosfet
Contextual Info: New Product Guide IPM/Power MOSFET Driver Couplers TLP102, TLP106, TLP352 and TLP356 The propagation delay of the newly-developed TLP102, TLP106, TLP352 and TLP356 devices is approximately half that of conventional IPM drivers. Toshiba guarantees a maximum propagation delay of 400 ns in the temperature

5252 F mosfet

Abstract: TLP220
Contextual Info: New Product Guide 350-V Withstanding Voltage Low-Cost Photorelays NEW PRODUCT GUIDE TLP220 Series of Photorelays features a 350-V withstanding voltage and incorporates normally open MOSFET. This Series is modification of the incorporated MOSFET chip of conventional TLP227G Series

Contextual Info: New Product Guide Normally Closed Photorelays TLP4xxxG Series TLP4xxxG Series of photorelays feature a withstanding voltage of 350 V and incorporate normally closed 1-form-B MOSFET. 1-form-B, 2-form-B and 1-form-A/B are available for both DIP and SOP packages. The MOSFETs in those devices keep ON-state without LED emission.

tlp250 application note

Abstract: tlp250 tlp2501 TLP250 application igbt drive tlp250 TLP251
Contextual Info: IGBT/Power MOSFET Gate Drive Photo-IC Couplers TLP250 INV /TLP250F(INV) NEW PRODUCT GUIDE IGBT / POWER MOSFET GATE DRIVE PHOTO-IC COUPLERS TLP250 (INV) / TLP250F (INV) The Toshiba TLP250 (INV) and TLP250F (INV) are 8-pin photocouplers designed exclusively for use in IGBT

Contextual Info: New Product Guide Photorelays for Testers ATE and Measuring Instruments TLP3113, TLP3114, TLP3115 and TLP3116 (1 form A) Photorelays for Testers (ATE) and Measuring Instruments TLP3113, TLP3114, TLP3115 and TLP3116 (1 form A type) Under Development The new TLP3113, TLP3114 TLP3115 and TLP3116 photorelays

bridge rectifier diode toshiba

Contextual Info: Photocouplers for DAA Circuits TLP270D/TLP270G 14-Pin SOP NEW PRODUCT GUIDE Toshiba's TLP270D and TLP270G represent a new type of photocoupler; they provide many required multi-functions in DAA circuits for communication modems and are conveniently integrated into one small 14-pin SOP (SOP16 package).

S-AV17

Abstract: 2SC2879 2SK3075 s-av6 quality FM TRANSMITTER 2SK1310 TOSHIBA RF Power Module S-AV17 S-AU80 2SK2854 2SK3079
Contextual Info: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors

S-AU80

Abstract: TOSHIBA RF Power Module S-AV17 toshiba s-au80 quality FM TRANSMITTER S-AV17 toshiba 2sc2879 2sc2879 equivalent 2SK3075 S-AV6 5252 F ic
Contextual Info: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors

5252 F led

Abstract: TLP797GA TLP797GAF
Contextual Info: New Product Guide Reinforced Insulation Type Photorelays EN60950 TLP797GA Series The TLP797GA Series is comprised of high-isolation-voltage (5-kVrms) devices whose development has been based on the designs of previous general-purpose photorelay series. The new devices all

tpc8107

Abstract: tpc8107 mosfet TPC8107 application circuit 7179 TPCS8210 application TPC8110 tpc8107 equivalent US6 KEC MAX1717 TPC6002
Contextual Info: Power MOSFETs TPC Series PRODUCT GUIDE Toshiba Power Compact Series devices have been developed for use in high-speed switching applications and in various interfaces. Toshiba has developed this high-efficiency low ON-resistance series using processes specially formulated to ensure that the devices can be used in

5252 F mosfet

Contextual Info: New Product Guide Photorelay TLP227GA Series The TLP227GA Series of general-purpose photorelays features devices whose OFF-state voltage 400 V is superior to that of TLP227G Series devices (350 V). This superior OFF-state voltage allows larger safety margins to

K2543

Abstract: MOSFET TOSHIBA 2SK MOSFET VDS 220V TO-220 equivalent 2sk2698 mosfet 2SK2996 equivalent transistor k2543 2sk2997 2SK2679 2SK2837 2sk2917
Contextual Info: Avalanche Withstand Capability PRODUCT GUIDE Avalanche Withstand Capability Avalanc Power MOSFETs are used as high-speed switching devices in applications such as switching power supplies and DC-DC converters, where they contribute to miniaturization and lighter weight. The higher the operating frequency,

GT30F121

Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101
Contextual Info: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications

s5j53

Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
Contextual Info: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require

GT30J124

Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Contextual Info: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.

GT45F122

Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Contextual Info: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor

S-FLAT PACKAGE

Contextual Info: Small Surface-Mount Rectifiers S-FLAT TM and M-FLAT TM Series S-FL Today’s mobile and office automation equipment is becoming ever smaller and slimmer. In response to this market trend, Toshiba have developed an ultra-small surface-mount S-Flat package rectifier which allows high-density

TOSHIBA RECTIFIER

Abstract: toshiba new label
Contextual Info: Small Surface-Mount Rectifiers US-FLAT TM, S-FLAT TM and M-FLAT TM Series Today’s mobile and office automation equipment is becoming ever smaller and slimmer. In response to this market trend, Toshiba have developed an ultra-small surface-mount US-FLAT, S-FLAT, M-FLAT Series rectifier which allows high-density

SSM3K7002

Abstract: ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T
Contextual Info: S-MOS Series Small-Signal MOSFETs for Switching PRODUCT GUIDE S -MOS Family S-MOS Family Toshiba presents a range of small-signal MOSFET S-MOS devices which have been developed for various switching, interface and DC/DC converter applications. These MOSFETs have been classified into families according to application,

GT30F124

Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Contextual Info: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor

Power MOSFET, toshiba

Abstract: toshiba f5d NPN S2e TOSHIBA "ULTRA HIGH SPEED" DIODE 1A TPCA8103 438B MOSFET TOSHIBA TPCP8402 Power MOSFET toshiba TPC6004
Contextual Info: 2004-3 PRODUCT GUIDE Power MOSFETs TPC Series semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Power MOSFETs TPC Series CONTENTS 1. Overview. p.4-5 2. Features . p.6-15