52M HZ Search Results

Contextual Info: MtronPTI .when timing matters M610x $ H HCMOS/Clipped Sinewave TCXO/TCVCXO • -40°C~+85°C • T^^3.0V,3.3V,5.0V^ • £^ #-|a 8-52M H z • n ( 0.3ppm) € 't i& it # : 1.5ppb/G • ' f i t ’ itrSONET/SDH/SERDES/GSM/CDMA • 3G $4G • Gig-Ethemet

NJL5151M

Abstract: irf 480 NJL5153 NJL5152M NJL5153M NJL515IM NJL5151 53m diode
Contextual Info: NJL5151M/52M/53M MINI M OLD T Y P E PHOTO CO U PLER OUTLINE typ. • GENERAL DESCRIPTION The N J L 5 1 5 1 M U nit: mm series a re sm all p a c k a g e d u a l-in -lin e p h o to c o u p le rs , w h ic h c o n s is t o f h ig h p o w e r in fra re d e m ittin g d io d e a n d h ig h sen sitv e Si

NJL5151

Abstract: NJL5151M MJL5151 S1S3M NJL5152M NJL5152 NJL5153
Contextual Info: 4-18- mB Km*- 9+ *n •*»- -aO fflD I ft 4# ! IIA <7> i-» o o \ ç >o * » >" O Sj 5 *i g « « c_ > — c_ >— CJl ro 1 r- n> Ci 2 2 H cr 2 * CJl ffl i « » >fr '•?«•»& H » ä rt^[P§ i^PS >fr £ i» M W : * ? I i m* \i, \¡, ^ <

Contextual Info: ARLITECH ELECTRONIC CORP. TEL:886-2-2999-8313 FAX:886-2-2995-7520 E-mail:sales@arlitech.com.tw SMD POWER INDUCTORS / ADPI Series ● Features 1. To be high saturation for surface mounting. 2. Surface mounts inductor with high current rating. 3. Low resistance to keep power loss minimum.

Contextual Info: Agilent Technologies OmniBER OTN Jitter Analyzer J7231B Technical Data Sheet Accurate, repeatable jitter measurements for SONET/SDH/OTN interfaces. OmniBER OTN Jitter Key Features • Fully complies and exceeds the requirements of ITU-T O.172 for SONET/SDH Jitter generation &

Contextual Info: SaRonix Crystal Clock Oscillator ECL Half Size E/D SI 150 Series Technical Data Frequency Range: 20 M Hz to 130 MHz Frequency Stability: ±50 or ±100 ppm over all conditions: calibration tolerance, operating tem perature, input voltage change, load change,

AN305

Abstract: vtr modulator AN3059
Contextual Info: AN305 A N 305 VTR * 7 - AGC 0 S & /V T R Color AGC Circuit I flit ^ / D e s c r i p t i o n AN 305 l±, VTR n T -f0 t 7- AGC a s # « I: IS: I t 5 n 4 ^ -»Hi f t [5] Unit 6.6 ± 0.5 * t ls= 2C H 4# i S / F e a t u r e s i • AN305 °+1 ts 7 — AGC [n]S&

Contextual Info: MITSUBISHI RF POWER MODULE M57735 50-54MHZ, 12.5V, 19W, SSB MOBILE RADIO BLOCK DIAGRAM <D CD— IH[ > PIN : P in : RF IN PU T ©VCCI : VBB ® VC C 2 : ®PO 1st. DC SUPPLY : BASE BIAS SUPPLY 2nd. DC SUPPLY : RF O U TPU T © G N D : FIN ABSOLUTE MAXIMUM RATINGS To = 2 5 °C unless otherwise noted

Contextual Info: ZX5T955G 140V PNP M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 140V PNP transistor offers extrem ely low on state losses m aking it ideal for use in

TIC 106A

Contextual Info: on Protection Circuits TVS Avalanche Diode in a Chip Scale ¿•wV SP0501BACT T h e p ro d u c t is a silicon P/N s tru c tu re ta ilo re d for E SD p rotectio n and is offe re d in the s tan dard E IA 04 02 size. T h e single ch a n n e l C hip S cale d e vice is use d to he lp p ro te c t se n sitive digital or a n alog inpu t c ircu its on

Contextual Info: ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits

Contextual Info: ZX5T951G 60V PNP M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V PNP transistor offers extrem ely low on state losses m aking it ideal for use in

Contextual Info: ZX5T853G 100V NPN LOW SAT M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC

Contextual Info: ZXTP2014G 140V PNP M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new low saturation 140V PNP transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits

Contextual Info: ZXTP2013G 100V PNP M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V PNP transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits

Contextual Info: ZXTP2012G 60V PNP M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V PNP transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits

2SA1315-Y

Abstract: 2SB560 2SA785 2N4033 2SA817Y LOW-POWER SILICON PNP 2SA1315Y 2SA1316GR 2SA1316-GR TXD10K40.80
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 768 V BR CEO hFE (V) V(BR)CEO 5 Manufacturer >= Ie Max (A) fT (Hz) Cobo V(BR)CBO Max PD Max Toper Max Package Style 70 V, (Cont'd) lOOn lOOn 100M 100M BC448A

PI054-33OL

Abstract: CH102 pi0105 P1043 PI043-4R7M PI073-120M O73-680K PIO75-331K CH-102
Contextual Info: m • pio P I O S E R I E S POWER INDUCTOR • FEATURES V a r i o u s h i g h power s u r f a c e m o u n t a b le ty p e in d u c to rs are s u p e rio r to h ig h s a t u r a t i o n . • APPLICATION P o rta b le co m m u n ica tio n Notebook Com puter

LTR-516AD

Abstract: D0-201AD T4151 ltr51
Contextual Info: ;l i t e - on i n c r- x l 31E » a SS3b3b7 0G.GJifi75 L> E i L T N BLACK PLASTIC PHOTODIODE LTR-516AD . _ , , r r q i . 5 \ : FEATURES • HIGH PHOTO S E N S IT IV IT Y . • S U IT A B L E FO R IN F R A R E D R A D IA T IO N . • LOW JUN CTIO N C A P A C IT A N C E.

Contextual Info: ZX5T949G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V PNP transistor offers extrem ely low on state losses m aking it ideal for use in

Contextual Info: ZX5T851G 60V NPN M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extrem ely low on state losses m aking it ideal for use in

Contextual Info: 1SR139-100/1SR139-200/1SR139 400 — K /D iod es 1SR139-100/1SR139-200 1SRI 39-400 Silicon Diffused Junction Glass-Sealed Rectifying Diodes Mold Type; 1SR139-100, 1SR139-200, 1SR13940012, < , -y- - • W f ^ i£ 0 / D im e n s io n s (Unit : mm if 10OV/2OOV/4O0V t M

NSA3430A

Abstract: NV5032SA
Contextual Info: 水晶発振器 形名 NV5032SA 電圧制御水晶発振器 VCXO • 主用途 WiMAX 等通信機器 ■ 特長 ● 5.0 x 3.2mm の小型セラミックパッケージです。 ● 出力電圧：CMOS ● 超小型で良好なエージング特性を有しています。

byt 52d

Abstract: BYT 45 BYT52A BYT52M
Contextual Info: BL GALAXY ELECTRICAL BYT52A Z -BYT52M(Z) VOLT AGE RANGE: 50 - 1000 V CURRENT: 1.4 A FAST RECOVERY RECT IFIERS FEATURES DO - 15 Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon, Alcohol,Is opropanol and