531 OPTO Search Results

RS631

Abstract: circuit capacitive level transmitter nn17 f6351
Contextual Info: Issued March 1986 F6351 20mA current loop opto-isolator Stock numbers 631-531 and 631-547 The RS 631-531 is equivalent to the HCPL4100 The RS 631-547 is equivalent to the HCPL4200 Two opto isolators, transmitter 631-531 and receiver 631-547, designed specifically for digital 020mA current loop applications. The opto isolators

c1166

Abstract: C5804 C2516A C1188 c2555 RG6 coaxial cable C2543A C0454A C2536A.41.10 354-37
Contextual Info: 531-2012:QuarkCatalogTempNew 8/23/12 11:10 AM Page 531 3 Electronic Communication and Coaxial Cable ᭤ RoHS Compliant Directive 2002/95/EC ᭤ Impact- and Abrasion-Resistant RoHS ᭤ Stranded Conductors for Superior Flexibility ᭤ Designed to Meet UL VW-1 Vertical Wire Flame Test

7 segment display 542

Abstract: 7-segment 4 digit 5461 din 74 Pt100-sensor display de 7 segmentos AFFICHEUR sonde pt100 PT100 temperature sensor of temperatur DC334
Contextual Info: CODIX 531 für Widerstands-Thermometer Pt100, Ni100 deutsch Digitalanzeige for resitance thermometers Pt100, Ni100 english Digital display Afficheur digital Pt100, Ni100 français pour thermomètres à résistance Visualizador digital Visualizzatore digitale

ATEX 2033

Abstract: optokoppler
Contextual Info: 04-MÄR-2003 15:41 PTB FB. 3.4 EX-SCHUTZ Physikalisch-Technische +49 531 592 3405 S.01 Bundesanstalt Braunsehweigund Berlin Telefax Bittesofortweiterleiten! Bei fehlerhafter übermittlung In the CBSOoffauliy fepttlducrlon. 1 Anzahl Seiten einschi. Deckblatt :

rel 531

Abstract: step down transformer 6-0-6 abb REL531 RTXP 18 cutout ABB brc 410 REL531 Broken Conductor Detection for Overhead Line Distribution System IEC 255-3 earth fault relay with 4 ct detect abb multiplexer
Contextual Info: Line distance protection terminal REL 531*2.0 1MRK 606 005-BEN Page 1 May 2002 Changed since October 1998 Data subject to change without notice SE 95 02 15 Features • Line distance functionality comprises; - simultaneous measurement of the different phase - phase and phase - earth

T318

Contextual Info: DATE REVISIONS REV DRAWING NUMBER REV SSL-LX100133XX 9.6 .386 DIA. 11.5 (.453) 13.5 (.531) 1 (.04) MAX 25.4 (1.00) MIN 27 (1.063) MIN RELIABILITY NOTE: OUR MANY YEARS OF EXPERIENCE DATA ACCUMULATION INDICATE AND THAT SOLDER HEAT IS A MAJOR CAUSE OF EARLY

REL531

Abstract: rel 531 abb REL531 microcontroller based substation monitoring using pulse echo in power cable fault locator REL531 application microcontroller based substation monitoring using with parameters 3 pole circuit breaker ABB microcontroller based substation monitoring and c REL521
Contextual Info: REL 531 * 1.0 Line di:stance protection 1 MAK 506 004-BEN Page' Oclober 1997 Changed since April 1997 Dala subjecl to change wilhoul nolice terminal ABB Network Partner SE 95 02 15 \ I Features .Simultaneous measurement of the phasephase and phase-earth loop impedances with in

3AMC

Abstract: SSL-LX30FT2GD
Contextual Info: DATE I REVI5KJN5 I 1 1 2 .5 13 .5 <.531 MIN .5 .0 2 0 ) TYP JL .4 9 2 ) MIN. ;a t h o d e UNIT: m m (INCHES) TOLERANCE: ± 0 .2 (-0 0 8 ] RELIABILITY NOTE DUR MANY YEARS OF EXPERIENCE DATA ACCUMULATION INDICATE THAT SOLDER HEAT IS A MAOOR CAUSE OF EARLY AND FUTURE

Contextual Info: FILn M I C R O E L E C T R O N I C S I 4SE D • 3S75745 F IL M M IC R O E L E C T R O N IC S IN C . IOB Centennial Drive, Peabody MA 01960, USA . TEL 508 531-8901 FAX (508) 532-9954 □ □ □ □ 1 7 1 T7T ■ FLMfT s o l id s t a t e r e l a y (SPST/NO)

relay 6v 100 ohm

Abstract: DDD017Z MIL-R-28750 FET 125DegC
Contextual Info: FILn M I C R O E L E C T R O N I C S I M5E D 3S 7S 745 □□□□ !?! T7T • F IL M M IC R O E L E C T R O N IC S IN C . The Ultim ate In Microelectronic Packaging and Interconnect Technology JOB C e n te rin g Drive, Peabody M A 0 9 6 0 , USA * TEL 508) 531-8901 FAX (508) 5 3 2 -9 95 4

2N5779

Abstract: L14H4 photo transistor 2n5777 L14f1 photo transistor 2N5777 H15A1 photo transistor L14F1 2N5780 opto 4n25 4n35 1327
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS GE TYPE FA LL R IS E M AX. M IN . M A X . P E A K E M IS S IO N W A V ELEN G TH T IM E T IM E Vp @ Pd PO@ NO. lp = 1 0 0 m A lp = 1 0 0 m A T Y P . n. M E T E R S T Y P . n. S E C . T Y P . n. S E C . mW PAGE M A X . Ip CO NT.

L14F1 npn photo transistor

Abstract: 4n26 opto isolator 4n27 opto isolator L14F1 phototransistor 4N25-4N26-4N27 4N25-4N26-4N27-4N28 2N5777 2N5780 transistor 531 ge 4n25
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW

ssl55c

Abstract: photo transistor 2n5777 2N5779 PHOTO DIODE LED55C LED56F L14F1 LED56 LED55C H74A1 LED55B
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW

2N5777 equivalent

Abstract: transistor l14g2 L14G3 L14G1-L14G2-L14G3 l14g1 equivalent L14G2 general electric h11 bulb L14G3 equivalent L14G2 color sensitive PHOTO TRANSISTOR
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL RISE MAX. MIN. MAX. PEAK EMISSION W AVELENGTH TIME TIME Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC. mW

2n5777 phototransistor

Abstract: L14F1 PHOTOTRANSISTOR 2n5779 Phototransistor L14F1 L14F1 npn photo transistor LED55B photo transistor L14F1 L14G3 phototransistor npn photo transistor H11A2
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW

H15A1

Abstract: H15A1 opto L14F1 npn photo transistor h15a2 L14F1 phototransistor ge H15A1 photo transistor L14F1 opto h15a2 LED56 L14F2
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW

L14F1 npn photo transistor

Abstract: transistor l14f1 2N5777 equivalent ge L14F1 L14f1 photo transistor photo transistor L14F1 L14F1 L14F1-L14F2 of transistor L14F1 circuit using l14f1
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL RISE MAX. MIN. MAX. PEAK EMISSION W AVELENGTH TIME TIME Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC. mW

L14F1 phototransistor

Abstract: L14F1 npn photo transistor T1 L14F1 TRANSISTOR 2n5777 phototransistor 340 opto isolator LED55B 2N5777 A3-H11 2N5778 L14G3
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW

photo transistor 2n5777

Abstract: L14F1 npn photo transistor 2N5777 h11 bulb 2n5777 l14f1 2N5778 2 leads photo transistor 2n5777 photo transistor 2n5778 2N5777-80 photo transistor L14F1
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F FALL RISE M AX. M IN . M A X . PEAK EM ISSION W AVELENG TH T IM E T IM E Vp @ Pd PO@ lp = 1 0 0 m A lp = 100m A TYP. n. M ETER S TYP. n. SEC. T Y P . n. SEC. mW 5.4mW

PHOTO DIODE LED55C

Abstract: ssl55c LED55B photo transistor L14F1 ssl55b SSL55CF LED56F LED56 LED55C Direct replacement for ssl55c
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW

L14H2

Abstract: L14H1 L14F1 npn photo transistor l14h4 AA 4N35 h11 bulb 2N5777 L14F2 photo transistor L14F1 H11A3
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FA LL RISE MAX. MIN. MAX. PEA K EMISSION W AVELEN G TH TIME TIME Vp @ Pd PO@ lp=100mA lp= 100mA TYP. n. M ETER S TYP. n. SEC. T YP . n. SEC . mW

opto isolator 4n35

Abstract: GE 4N35 l14f1 ir phototransistor L14F1 npn photo transistor 537 opto isolator L14F1 phototransistor 4N35-37 l14h4 LED55B L14G1 phototransistor
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS GE TYPE FALL R IS E MAX. M IN . M A X . P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ NO. lp = 1 0 0 m A l p = 1 0 0 m A T Y P . n. M E T E R S T Y P . n. S E C . T Y P . n. S E C . m W PAGE M A X . Ip CONT.

Phototransistor L14G3 application

Abstract: L14F1 npn photo transistor L14G2 application note L14F1 phototransistor 2N5777 circuit using l14f1 H11A520 340 opto isolator L14F1 photo transistor 2n5777
Contextual Info: OPTOELECTRONICS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 MIN. PO@ lp=100mA 5.4mW 3.5mW 1.5mW 5.4mW 3.5 mW 1.5mW INFRARED EMITTERS FALL MAX. PEAK EMISSION RISE TIME Vp @ WAVELENGTH TIME lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC.

TLP 817

Abstract: moc 641 CNY 817 TLP 621 TOSHIBA NEC ps2401 TLP766J MOTOROLA moc cny 57 moc 410 optokoppler
Contextual Info: Optokoppler Optocouplers Vergleichsliste Cross reference D iese Liste erhebt keinen A n sp ru ch auf V ollstän dig keit, im Einzelfall bitte die e n tsp re ch e n d e n D a te nb lätter ve rg le ich e n . (This list do es not cla im be in g com p le te , therefore,