532000B Search Results

MB40

Abstract: MSM532000B
Contextual Info: O K I Semiconductor M SM 532000B 1 3 1 ,0 7 2 - W o rd x 1 6 - B it M a s k R O M DESCRIPTION The OKI 532000B is a high-speed silicon gate CMOS Mask ROM with 131,072-word x 16-bit capacity. The 532000B operates on a single 5.0 V pow er supply and is TTL compatible. The chip's asynchro­

Contextual Info: O K I Semiconductor 532000B 131,072-Word x 16-Bit Mask ROM DESCRIPTION The OKI M SM 532000B is a high-speed silicon gate CM OS M ask ROM with 131,072-word x 16-bit capacity. The M SM 532000B operates on a single 5.0 V power supply and is TTL compatible. The chip's asynchro­

IR2E01

Abstract: LR4087 LZ8420M LZ9GG13 LI3160 IR2C36 LZ2423A SM8205 LZ9GG13M LR39901
Contextual Info: Index Model No. A R M 7 D C PU C o re B i-C M O S 1 28 4 0 ,4 2 C 62 IR 3 Y 1 2 A 50 LH1532 49 LH 531V 00 2.4 IR 2 E 2 8 62 IR 3 Y 1 4 50 LH1536 49 LH 532000B 3,4 IR 2 E 2 9 62 IR 3 Y 1 5 50 LH 1540A 49 L H 5 3 2 00 0 B -1 3,4 IR 2 E 3 0 62 IR 3 Y 1 6 50

48-PIN

Abstract: A12C A15C LH532000B-1
Contextual Info: 532000B-1 FEATURES CMOS 2M 256K x 8/128K x 16 M a sk-P ro g ra m m a b le ROM PIN CONNECTIONS • 262,144 words x 8 bit organization (Byte mode) 131,072 words x 16 bit organization (Word mode) 40-PIN DIP 40-PIN SOP TOP VIEW f . 1• 2 a 7[= O E i/Ô Ë ^D C C

48-PIN

Abstract: A10C A12C A15C LH532000B
Contextual Info: 532000B FEATURES CMOS 2M 256K x 8/128K x 16 M ask-Program m able ROM PIN CONNECTIONS • 262,144 words x 8 bit organization (Byte mode) 131,072 words x 16 bit organization (Word mode) 40-PIN DIP 40-PIN SOP TOP VI EW f 1• \ 40 ZI Ag a 7C 2 39 U Ag AgiZ

sharp mask rom 44-pin

Contextual Info: 532000B FEATURES • Selectable memory organization: 262,144 x 8 bit byte mode 131,072 x 16 bit (word mode) • BYTE input pin selects bit configuration • Access time: 120/150 ns (MAX.) • CMOS 2M (256K x 8 / 128K x 16) Mask-Programmable ROM DESCRIPTION

48-PIN

Abstract: LH532000B-1
Contextual Info: 532000B-1 FEATURES • 262,144 words x 8 bit organization Byte mode 131,072 words × 16 bit organization (Word mode) • Access time: 120 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.) • Mask-programmable control pin

Contextual Info: 532000B-S FEATURES • 262,144 words x 8 bit organization Byte mode 131,072 words x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access times: 500 ns (MAX.) at 2.6 V < Vcc < 4.5 V 150 ns (MAX.) at 4.5 V < Vcc < 5.5 V

sharp mask rom

Abstract: LH532K
Contextual Info: NEW PRODUCT INFORMATION LH53V2R00 • Description Low-Voltage • High-Speed 2M-bit Mask-Programmable ROM Pin Connection The LH53V2R00N/T User's No. : LH5V2RXX is a CMOS 2M-bit mask-programmable ROM organized as 262 144 X 8 bits. 32-pin SO P It provides a high-speed access time of 120 ns with low voltage

LH532K

Abstract: LH53V2R00N LH53V2R00T TSQP032-P-0820 LH5V2R 48TSOP 2mbit sharp mask rom LH532CXX
Contextual Info: NEW PRODUCT INFORMATION LH53V2R00 • Description Low-Voltage • High-Speed 2M-bit Mask-Programmable ROM Pin Connection The LH53V2R00N/T User's No. : LH5V2RXX is a CMOS 2M-bit mask-programmable ROM organized as 262 144 X 8 bits. It provides a high-speed access time of 120 ns with low voltage

Contextual Info: 532000B FEATURES • 262,144 words x 8 bit organization Byte mode 131,072 words x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access times: 120/150 ns (MAX.) • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 |iW (MAX.)

Contextual Info: • 262,144 words x 8 bit organization Byte mode 131,072 words x 16 bit organization (Word mode) • Access time: 120 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550 jiW (MAX.) • Mask-programmable control pin (for 40-pin DIP/40-pin SOP):

Contextual Info: 532000B FEATURES • 262,144 words x 8 bit organization Byte mode 131,072 words x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access times: 120/150 ns (MAX.) • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 (iW (MAX.)

L239D

Contextual Info: 532000B-S FEATURES • 262,144 words x 8 bit organization Byte mode 131,072 words x 16 bit organization (Word mode) CMOS 2M (256K x 8/128K x 16) 3 V-Drive Mask-Programmable ROM PIN CONNECTIONS 4 0 - P IN D IP T O P V IE W 4 0 - P IN S O P f • Access times:

48-PIN

Abstract: LH532000B
Contextual Info: 532000B FEATURES • 262,144 words x 8 bit organization Byte mode 131,072 words × 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access times: 120/150 ns (MAX.) • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.)

4039A

Abstract: LH532000BD-S
Contextual Info: 532000B-S FEATURES • 262,144 words x 8 bit organization Byte mode 131,072 words x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access times: 500 ns (MAX.) at 2.6 V < Vcc < 4.5 V 150 ns (MAX.) at 4.5 V < Vcc < 5.5 V

27E-14

Contextual Info: 532000B CMOS 2M 256K x 8/128K x 16 MROM FEATURES PIN CONNECTIONS • 262,144 words x 8 bit organization (Byte mode) 131,072 words x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access times: 120/150 ns (MAX.) 40 -P IN D IP

lh532k

Contextual Info: NEW PRODUCT INFORMATION LH53V2R00 • Description Low-Voltage • High-Speed 2M-bit Mask-Programmable ROM Pin Connection The LH53V2R00N/T User's No. : LH5V2RXX is a CMOS 2M-bit mask-programmable ROM organized as 262 144 X 8 bits. It provides a high-speed access time of 120 ns with low voltage

C2438

Contextual Info: 532000B-S CM OS 2M 256K x 8/128K x 16 3 V-Drive Mask-Programmable ROM FEATURES PIN CONNECTIONS • 262,144 words x 8 bit organization (Byte mode) 131,072 words x 16 bit organization (Word mode) 40-PIN DIP 40-PIN SO P TO P VIEW • BYTE input pin selects bit configuration

48-PIN

Abstract: LH532000B
Contextual Info: 532000B CMOS 2M 256K x 8/128K × 16 MROM FEATURES PIN CONNECTIONS • 262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access times: 120/150 ns (MAX.) • Low-power consumption:

LH532000B-1

Abstract: 48-PIN
Contextual Info: 532000B-1 CMOS 2M 256K x 8/128K × 16 MROM FEATURES PIN CONNECTIONS • 262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode) • Access time: 120 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.)

48-PIN

Abstract: DSA0078634 LH532000BD-S
Contextual Info: 532000B-S FEATURES • 262,144 words x 8 bit organization Byte mode 131,072 words × 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access times: 500 ns (MAX.) at 2.6 V ≤ VCC < 4.5 V 150 ns (MAX.) at 4.5 V ≤ VCC ≤ 5.5 V

531030

Abstract: MSM27C1622BZ 02CM 27C131 27c822 27c832
Contextual Info: M ask RO M s 1 Meg 2 Meg 4 Meg I 8 Meg i I I i i 128Kx8 256K x 8 512K x 8 I I 1-Meg x 8 I 2-Meg x 8 I M SM 531020B M SM 531000B M SM 531030B M SM 531021B M S M 5 3 1001B M SM 531031B M SM 532021B M SM 532001B M SM 532031B M S M 5 34 0 21 C M S M 5 34 0 01 C

02CM

Contextual Info: ROMs M a sk RO M s 1-M eg M a s k R O M s Part Number Configuration P ins/Package M SM 531020B 128K x 8 2 8 / DIP | M SM 531000B 128K x 8 2 8 / D IP 100 5.0 V M SM 5 3 1 0 3 0 B 128K x 8 2 8 / D IP 150 3.3 V 5.0 V 1 A ccess Tima M a x ns Voltage 70 5.0 V