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    1004CL

    Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
    Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "5321200BW/BWG-6 H ~KM M 5321200BW/BWG-' -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7


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    PDF KMM5321200BW/BWG-6 5321200BW/BWG-' KMM5361203BW/8 KMM5322200BW/BWG-6 KMM5322100BKU/BKUG-5 MM5361203BW/BWG-7 KMM5322200BW/BWG-7 2MX32 KMM5322100BK 2Mx36 1004CL 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32

    Untitled

    Abstract: No abstract text available
    Text: Preliminary DRAM MODULE 5321200BW/BWG 5321200BW/BWG Fast Page Mode 1Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KM M 5321200BW is a 1M bit x 32 - 5321200BW 1024 cycles/16ms Ref, SOJ, Solder


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    PDF KMM5321200BW/BWG KMM5321200BW/BWG 1Mx32 1Mx16 5321200BW KMM5321200BW cycles/16ms KMM5321200BW

    s - ck5t

    Abstract: CA52
    Text: Preliminary 5321200BW/BWG DRAM MODULE 5321200BW/BWG Fast Page Mode 1Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung 5321200BW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification


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    PDF KMM5321200BW/B KMM5321200BW/BWG 1Mx32 1Mx16 KMM5321200BW 42-pin 72-pin s - ck5t CA52