532E Search Results

Contextual Info: HAT1033T Silicon P-Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-532E 6th. Edition Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline T S S O P -8 1 5 8 D D D ? S S S S

CST-532E

Abstract: CST532 CST-533E
Contextual Info: CHINA SEMICONDUCTOR CORPORATION Feature § § § § 0.56 inch 14.2mm Digit height. Case mold type Excellent character appearance Wide viewing angle Mechanical Dimension Typical Internal Equivalent Circuit TRIAD DIGIT DISPLAY CST-532E/533E Model no. § CST-532E/533E Orange (GaAsP/GaP)

Contextual Info: STM8AF6x26/4x/66/68 Automotive 8-bit MCU, with up to 32 Kbytes Flash, data EEPROM, 10-bit ADC, timers, LIN, SPI, I2C, 3 to 5.5 V Datasheet - production data Features • Core – Max fCPU: 16 MHz – Advanced STM8A core with Harvard architecture and 3-stage pipeline

NE685

Contextual Info: NONLINEAR MODEL UPA862TD BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 NE685 Q2 NE851 Parameters Q1 NE685 Q2 NE851 IS 7.0e-16 137e-18 MJC 0.34 0.14 BF 109 166 XCJC 0.5 0.5 NF 1 0.9871 CJS VAF 15 20.4 VJS 0.75 0.75 IKF 0.19 50 MJS ISE 7.90e-13 80.4e-15 FC

LB 11899

Abstract: NE851M13-T3-A of IC 7476 in file bf166 IC 2262 AF 2SC5801 NE851M13 S21E NEC semiconductor 9135 Features of IC 7476
Contextual Info: NEC's NPN SILICON TRANSISTOR NE851M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 LOW PUSHING FACTOR 0.35 • 0.7 LOW PHASE NOISE 1.0+0.1 ñ0.05 IDEAL FOR ≤ 3 GHz OSCILLATORS • 0.7±0.05

STM8A

Abstract: STM8AF62xx H6166 STM8af6266 MA6491 pm0044 sda 5241 STM8 CPU programming manual STM8S 5401 DM
Contextual Info: STM8AF622x/4x STM8AF6266/68 STM8AF612x/4x STM8AF6166/68 Automotive 8-bit MCU, with up to 32 Kbytes Flash, data EEPROM, 10-bit ADC, timers, LIN, SPI, I2C, 3 to 5.5 V Features • Core – Max fCPU: 16 MHz – Advanced STM8A core with Harvard architecture and 3-stage pipeline

STM8 spi programming manual

Abstract: STM8S105 adc example sTM8s Date Code Marking STM8 PWM example sTM8l
Contextual Info: STM8S105xx Access line, 16 MHz STM8S 8-bit MCU, up to 32 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, UART, SPI, I²C Interrupt management Nested interrupt controller with 32 interrupts • • Up to 37 external interrupts on 6 vectors LQFP48 7x7 LQFP44 10x10

150J10

Abstract: mje 13006
Contextual Info: NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • SMALL PACKAGE OUTLINE: 1.0±0.05 0.8 +0.07 -0.05 LOW HEIGHT PROFILE: E1 C2 Q1 6 B1 5 2 E2 3 Q2 4 B2 PIN CONNECTIONS 1. Collector Q1 2. Emitter (Q1) 3. Collector (Q2)

um0470

Abstract: pwm module stm8 H617 PM0047 UM0500 STM8AH61x PURE 5001h H5178
Contextual Info: STM8AF61xx, STM8AH61xx STM8AF51xx, STM8AH51xx Automotive 8-bit MCU, with up to 128 Kbytes Flash, EEPROM, 10-bit ADC, timers, LIN, CAN, USART, SPI, I2C, 3 V to 5.5 V Features Core • Max fCPU: 24 MHz ■ Advanced STM8A core with Harvard architecture and 3-stage pipeline

MALLORY CAPACITORS

Abstract: MALLORY Inductuner mallory 235 HT-288 mallory capacitor cross reference mallory capacitor HT-361-0 duracap capacitor HT-288-1 HT-234
Contextual Info: MALLORY - DURACAP INTERNATIONAL INC. P.O. Box 210, 59 Montclair Drive Woodstock, Ontario, Canada N4S 7W8 Telephone: 519 539-4891 Sales@duracap.com Fax:(519)539-6684 Cage Code 63778 E.I.A. Code 235 Web: www.duracap.com MALLORY CONTROLS - INDUCTUNER PRODUCTS

STM8S105XX

Abstract: AX 2008 lqfp48 STM8S ic 8040
Contextual Info: STM8S105xx Access line, 16 MHz STM8S 8-bit MCU, up to 32 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, UART, SPI, I²C Preliminary data Features • ■ ■ Core – 16 MHz advanced STM8 core with Harvard architecture and 3-stage pipeline – Extended instruction set

STM8S105K

Abstract: STM8S103 lm 5027 power transistor stm8s105 pwm example sTM8s part mark sb diode IN 5402 STM8S103XX STM8S10x STM8S103 ANALOG INPUT
Contextual Info: STM8S10xxx Access line, 16 MHz STM8S 8-bit MCU, up to 32 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, UART, SPI, I²C Preliminary Data Features Core • 16 MHz advanced STM8 core with Harvard architecture and 3-stage pipeline ■ Extended instruction set

ic 7738

Abstract: 2SC5801 NE851M13 NE851M13-T3 S21E kf 203 transistor NEC 2501 LE 240
Contextual Info: NPN SILICON TRANSISTOR NE851M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 0.35 LOW PUSHING FACTOR 0.7 • 1.0+0.1 ñ0.05 IDEAL FOR ≤ 3 GHz OSCILLATORS LOW PHASE NOISE 0.7±0.05 E7

KF 517

Abstract: AN1026 NE685 S21E UPA862TD UPA862TD-T3-A
Contextual Info: NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • SMALL PACKAGE OUTLINE: 1.0±0.05 0.8 +0.07 -0.05 LOW HEIGHT PROFILE: E1 C2 Q1 6 B1 5 2 E2 3 Q2 4 B2 PIN CONNECTIONS 1. Collector Q1 2. Emitter (Q1)

Contextual Info: STM8TL52G4 STM8TL52F4 STM8TL53C4 STM8TL53G4 STM8TL53F4 8-bit ultralow power touch sensing microcontroller with 16 Kbytes Flash, ProxSense , timers, USART, SPI, I2C Datasheet  production data Features • Operating conditions – Operating power supply: 1.65 V to 3.6 V

6n81

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS6R06VE3_B2 Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values C3 B2!"BB32#1322E14DDD F3FB23"BB326B43

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS15R06VL4_B2 Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values C3 B2!"BB32#1322E14DDD F3FB23"BB326B43

Contextual Info: Technische Information / technical information FS30R06VE3 IGBT-Module IGBT-modules Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values C3 B2!"BB32#1322E14DDD F3FB23"BB326B43

Y6W 35

Contextual Info: Technische Information / technical information FP30R06YE3 IGBT-Module IGBT-modules Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values C3 B2!"BB32#1322E14DDD F3FB23"BB326B43

Contextual Info: STM8AF5xxx STM8AF6x69/7x/8x/9x/Ax Automotive 8-bit MCU, with up to 128 Kbytes Flash, data EEPROM, 10-bit ADC, timers, LIN, CAN, USART, SPI, I2C, 3 to 5.5 V Datasheet - production data Features • Core – Max fCPU: 24 MHz – Advanced STM8A core with Harvard

53ECh

Abstract: STM8AH6166 5807h STM8AH61xx PURE 5001h 524CH 4801H 526Ch pm0044 5408H
Contextual Info: STM8AF61xx STM8AH61xx Automotive 8-bit MCU, with up to 32 Kbytes Flash, EEPROM, 10-bit ADC, timers, LIN, SPI, I2C, 3 V to 5.5 V Features Core • Max fCPU: 16 MHz ■ Advanced STM8A core with Harvard architecture and 3-stage pipeline ■ Average 1.6 cycles/instruction resulting in 10

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FD200R65KF2-K Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values "C3#C2$D321322E14% C3C23D326C4%3

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FZ400R65KF2 IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values !C3"C2#D321322E14$ C3C23D326C4$3 A%&6'6  *+ A%&6'6)*+ A%&6'6)*+

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DDB6U25N16VR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values A325EF36!F"#6$1B%3DE1322E14DDD &' 6 6*+,