5347B DIODE Search Results

j9 diode

Abstract: j196 h196 5388B Diode 9H J69 DIODE
Contextual Info: 1N 5347B.1N 5388B power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 3 : + 9   ;   Absolute Maximum Ratings Symbol Conditions Axial lead diode

5349B

Abstract: 5352B 5353B 5364b 5375B 5366B 5363B 5359B 5350B 5367B
Contextual Info: 1N 5347B … 1N 5388B 5 W Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung 5W Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse

K580

Abstract: 5382B i5ij K8/selenium rectifier
Contextual Info: 1N 5347B.1N 5382B power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 2 : * 8   9   Absolute Maximum Ratings Symbol Conditions Axial lead diode

diode zener

Contextual Info: 1N 5347B.1N 5388B 3 : + 9   ;   Absolute Maximum Ratings Symbol Conditions Axial lead diode Zener silicon diodes    ;    9 3< : +  &% =   '  8  ;    9 @<        A   @<        A 

Contextual Info: 1N 5347B.1N 5388B 3 : + 9   ;   Absolute Maximum Ratings Symbol Conditions Axial lead diode Zener silicon diodes    ;    9 3< : +  &% =   '  8  ;    9 @<        A   @<        A 

Contextual Info: 1N 5347B.1N 5382B 2 : * 8   9   Absolute Maximum Ratings Symbol Conditions Axial lead diode  9    8 2< : *  * 1 &% =   '  7  9    8  > 0  ? 1 @<        A   3  * BC1 @2        A 

5347B

Contextual Info: 1N 5347B.1N 5382B 2 : * 8   9   Absolute Maximum Ratings Symbol Conditions Axial lead diode  9    8 2< : *  * 1 &% =   '  7  9    8  > 0  ? 1 @<        A   3  * BC1 @2        A 

Contextual Info: 1N 5347B.1N 5382B 2 : * 8   9   Absolute Maximum Ratings Symbol Conditions Axial lead diode  9    8 2< : *  * 1 &% =   '  7  9    8  > 0  ? 1 @<        A   3  * BC1 @2        A 

5346B

Abstract: 5349B 5375B 5353b 5359B 5345B 5350B 1n5376b 5361B 5358B
Contextual Info: 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes Silizium-Leistungs-Z-Dioden Maximum power dissipation Maximale Verlustleistung Ø 4.5 5W ±0.1 7.5 ±0.1 62.5 ±0.5 Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse ~ DO-201 Weight approx. – Gewicht ca.

IN5350B

Abstract: in5346b in5347b 5346B 5350B
Contextual Info: 1N5354B THRU 1N5388B 5.0 WATT PLASTIC AXIAL LEAD SILICON ZENER DIODES D0-2Q1AD !N 0 M IN A L '1 ! TYPE I ZENER TEST VO LTAG E CUR R ENT FOR A & B SUFFIXONLY Vz at Izt Z zt at Izt Z z k at Izk Izk ;V mA 1Q 4 ~ ? f l 1N5345B IN 5346B VJ : 10 1N5348B 1N5349B

5349B

Abstract: 5357B 5364b 5366B 5352b 5359b 5369b 5363b 5353b 5350B
Contextual Info: 1N 5345B … 1N 5388B 5 W Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Silicon-Power-Z-Diodes (non-planar technology) Maximum power dissipation Maximale Verlustleistung 5W Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse

5346B

Abstract: 5388B 5359B 5368B 5366B 5363b 5358B 5349B 5369b 5375B
Contextual Info: 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung 5W Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse

IN 5349B

Abstract: 5377B 5357B 5368B 5363b in 5352b in 5359b 5349b 5364b 5352b
Contextual Info: 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung 5W Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse

zener 5359B

Abstract: 5349B 5346B 5347B zener 5349b 5353B 5359b 5352b 5362B 5350B
Contextual Info: 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes Silizium-Leistungs-Z-Dioden Nominal Zener voltage Nominale Zener-Spannung 8.2…200 V Standard tolerance of Zener voltage Standard-Toleranz der Zener Spannung ±5% Plastic case – Kunststoffgehäuse ~ DO-201

Contextual Info: 1 N 5345 B.1 N 5388 B 5 W Silizium-Leistungs-Z-Dioden Silicon-Power-Z-Diodes Nominal breakdown voltage Nenn-Arbeitsspannung 8.7.200 V Tolerance o f zener voltage Toleranz der Arbeitsspannung ±5% /4 .5 " Plastic case KunststofFgehäuse ~ D0-201 Weight approx.

5344b

Abstract: 5347b diode 5361B 5362B IN 5344B 5357B 5374B S200-2-00 5348B 5363B
Contextual Info: 1N5344B - 1 N5388B VISHAY 5WZENER DIODES fL IT E K K r P O W E R S E M IC O N D U C T O R j Features Voltage Range 8.2V - 200V Glass Passivated Junction 5W Steady State High Surge Capability ±5% Voltage Tolerance on Nominal Vz is Standard 100% Tested A A

in5388b

Abstract: IN5340B IN5368B IN5342B IN 5342B IN5343b IN 5338B diode IN 5342B 5338B 5388b
Contextual Info: 1N 5333B thru 1N 5388B Micro/semi Corp. / SANTA ANA, CA The d'Ode e x p e n s SCOTTSDALE, AZ For more inform ation call: / 602 94I-6300 FEATURES SILICON 5 WATT ZENER DIODES • ZENER VOLTAGE 3.3V to 200V • HIGH SURGE CURRENT CAPABILITY • FOR AVAILABLE TOLERANCES - SEE NOTE I

5338B

Abstract: 5339b 5359b 5341B zener 5359B 5340B 5344b 5366B 5353B zener diode ab
Contextual Info: 1N5333B thru 1N5388B Microsemi Corp. f The dtoóe experts / SANTA ANA, CA SCOTTSDALE, A Z / F o r m o re inform ation call: / 602 941-6300 SILICON 5 WATT ZENER DIODES FEATU RES • Z E N E R VO LTAG E 3.3V to 200V • HIGH S U R G E C U R R E N T C A P AB ILITY

IN5342b

Abstract: 5357B 5341B 5337B diode IN 5342B IN 5342B 5335B 5342B 5333B 5 watt zener
Contextual Info: 1N 5333B thru 1N 5388B SCOTTSDALE, A l For more information call: 602 941-6300 FEATURES SILICON 5 WATT ZENER DIODES • Z E N E R V O LTA G E 3.3V to 200V • HIGH S U R G E C U R R E N T C A P A B ILITY • FOR A V A ILA B LE T O L ER A N C E S - SEE NOTE 1

in5338b

Abstract: in5338b Zener diode in5369b IN5338 in5333B IN5341 in5349b in53418 Zener diode in5347b IN5359b
Contextual Info: 1N 5333B thru 1N 5388B I Microsemi Corp. $ The diode experts SCOTTSDALE , AZ For more information call: 602 941-6300 SILICON 5 WATT ZENER DIODES FEATUR ES • ZENER VOLTAGE 3.3V to 200V • HIGH SURGE CURRENT CAPABILITY • FOR AVAILABLE TO LERANCES - SEE NOTE 1

5342B

Abstract: 1n 4148 zener diode IN5956B diode IN 5342B IN 5342B Zener Diode 4148 zener T 4148 IN5913B in5388b IN5342B
Contextual Info: ZENER DIODES 1 WATT ZENER DIODE-PLASTIC O P E R A T IN G A N D S TO R A G E T E M P E R A T U R E - 6 5 ° C to + 1 75 °C IN 4 7 3 6 THRU IN 4 7 6 4 *E LE C T R IC A L C H A R A C T E R IS T IC S Ta = 2 5 °C u n le ss o th e rw ise n o te d V f = 1.2 V M ax,

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published