5392 DIODE Search Results

diode in 5392

Abstract: 12 f 5091 509X 5193 y5393
Contextual Info: 5SE SIEMENS C M P N T S i OPTO S IE M E N S I • AS3b3St RED HIGH EFFICIENCY RED YELLOW 0D040tb 0 ■ LDR 5091/5092/5093 LDH 5191/5192/5193 LDY 5391/5392/5393 GREEN LDG 5591/5592 im LED LAMP Package Dimensions in Inches mm) .-201 (5.1) . _ ^ Mho* .0 2 4 (0.6)

JANTX1N

Abstract: 971B
Contextual Info: Microsemi Zener Regulator Diodes ] ZEN M icrosem i D ivision Package O utline j Type Mil Spec Pow er Data S heet ID W Vz (V) Izt (m A) (« ) Zzk <n) Zzt °= f Part N um ber VR (V) Toi. (+/-%) 1N970A Scottsdale DO-35 STD 5392 0.4 24 5.2 33 750 5 18.2 10 1N970A (D 0 7 )

12 f 5091

Abstract: diode in 5392 LDR log led diode 3d
Contextual Info: SIEMENS CMPNTS-, OPTO 44E D • SIEMENS A23b35b 0DQM'13eJ □ M S I E X RED HIGH EFFICIENCY RED y e llo w LDR 5091/5092/5093 LDH 5191/5192/5193 LDY 5391/5392/5393 GREEN LDG 5591/5592 T1 % LED LAMP FEATURES • • • • • • High Light Output Lightly Tinted Clear Lens

IN 5399 TL

Abstract: 5397
Contextual Info: 1N5391 thru 1N5399 Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 1.5 A VRRM 50 V to 1000 V IFSM 25 A VF 1.4 V IR 5.0 µA Tj max. 150 °C DO-204AL (DO-41) Features • Low forward voltage drop • Low leakage current

IN5391

Abstract: 1N5390
Contextual Info: 1N5391 . 1N5399 FAGOR ^ 1.5 Amp. Silicon Rectifier Diodes Dimensions in mm. sf DO-15 Plastic o« a ill_— 6,-35 ±0.2 5 8 .5 Voltage 50 to 1.000 V. Current 1.5 A. at 70°C. 11- 0.5 Mounting instructions 1 . Min. distance from body to soldering point,

1N5390

Abstract: diode in 5392 1N5391 1N5399
Contextual Info: 1N5391 . 1N5399 1.5 Amp. Silicon Rectifier Diodes Dimensions in mm. DO-15 Plastic Voltage 50 to 1000 V. Current 1.5 A. at 70°C. 6.35 ± 0.2 58.5 min. • Low cost Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350°C.

1N5390

Abstract: 1N5391 1N5399
Contextual Info: 1N5391 . 1N5399 1.5 Amp. Silicon Rectifier Diodes Dimensions in mm. DO-15 Plastic Voltage 50 to 1000 V. Current 1.5 A. at 70°C. 6.35 ± 0.2 58.5 min. • Low cost Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350°C.

diode in 5395

Abstract: 1N5391 1N5399
Contextual Info: Certificate TH97/10561QM 1N5391 - 1N5399 SILICON RECTIFIER DIODES DO - 41 PRV : 50 - 1000 Volts Io : 1.5 Amperes FEATURES : * * * * * * Certificate TW00/17276EM High current capability High surge current capability High reliability Low reverse current Low forward voltage drop

Contextual Info: TH97/2478 1N5391 - 1N5399 SILICON RECTIFIER DIODES DO - 41 PRV : 50 - 1000 Volts Io : 1.5 Amperes FEATURES : * * * * * * IATF 0113686 SGS TH07/1033 TH09/2479 High current capability High surge current capability High reliability Low reverse current Low forward voltage drop

diode IN5399

Abstract: IN5399 in5391 diode IN5391 N5399 diode IN5391 diode rectifier in5399 3 Ampere silicon Diode IN5397 20 ampere diode
Contextual Info: DIODES LIMITED IN5391 TO IN5399 SERIES FAI RAC RES ESTATE. DEDW O RTH R OAD. W IN D S O R . BERKSHIRE. Telephone: W IN D S O R 69571 T ele x: 847255 SEMICONDUCTOR MANUFACTURERS 1.5 AMPERE SILICON RECTIFIERS With “ LOCKED-IN” Reliability FEATURES • Superior Rectification Efficiency

1N5391

Abstract: 1N5399 A-405
Contextual Info: LESHAN RADIO COMPANY, LTD. 1N5391 thru 1N5399 General Purpose Plastic Rectifiers 1.FEATURES * Plastic package has Underwriters Laboratories Reverse Voltage 50 to 1000V Forward Current 1.5A Flammability Classification 94V-0 * Construction utilizes void-free molded plastic technique

diode IN 5397

Abstract: 1N 5392 DIODE diode in 5392 T3 marking 1N 4000 diode diode 1n5392 diode 1n5397 1N5392-T3 1N5392-TB 1N5399
Contextual Info: 1N5391 – 1N5399 WTE POWER SEMICONDUCTORS Pb 1.5A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-15, Molded Plastic

Contextual Info: 1N5391 – 1N5399 1.5A STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data       

LT3973-3.3

Abstract: 9551 10613 diode 1334 D1029N D2209N D2659N D4401N D660N D748N
Contextual Info: M3 - Schaltung ~ Anschlußspannung ~ ~ 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 460 V 2200 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C] [A] [W]

diode 1n5397

Abstract: 1N5392
Contextual Info: 1N5391 – 1N5399 WTE POWER SEMICONDUCTORS Pb 1.5A STANDARD DIODE Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data        C Case: DO-15, Molded Plastic

Contextual Info: 1N5391/S - 1N5399/S 1.5A RECTIFIER Features • · · · · · Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Low Reverse Leakage Current Surge Overload Rating to 50A Peak Plastic Material - UL Flammability

D1029N

Abstract: D2209N D2659N D4401N D660N D748N 548 1334 diode
Contextual Info: ~ ~ ~ B6 - Schaltung Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 930 V 2200 V Kühlblöcke für Luftselbstkühlung - Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C] [A] [W]

N5399

Abstract: 1n4365 D0201AD 1N4004 or 1N5404 N5397 1N4140 1N4144 1N4007 DO-41 package 1N4145 681000
Contextual Info: S C H O T T K Y R EC T IFIER S OptritlfVfl arvd Vrrm lo Mam Vf Type Package <Vo*» An*) (Amp*) (Volt») 1N5817 D O -4 1 20 1.0 25 .4 5 1a 1N5818 D O -4 1 30 1.0 25 055 1N5019 D O -41 40 1.0 25 0.00 S R I 20 D O -41 20 1.0 40 050 SR130 D O -41 30 1.0

Contextual Info: 1N5391/S - 1N5399/S 1.5A RECTIFIER Features • · · · · · Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Low Reverse Leakage Current Surge Overload Rating to 50A Peak Plastic Material - UL Flammability

diode 1334

Abstract: D1029N D2209N D2659N D4401N D748N 1334 diode
Contextual Info: ~ ~ ~ B6 - Schaltung Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 930 V 2200 V Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id [°C] [A] [W] 25 844 1132 1182 1446 1901 2965 3215 3690 4067

diode in 5392

Abstract: 10331 D1029N D2209N D2659N D4401N D660N D748N in 4067 diode
Contextual Info: ~ ~ ~ B6 - Schaltung Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 930 V 2200 V Kühlblöcke für Luftselbstkühlung - Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C] [A] [W]

diode in 5392

Abstract: diode in 5392 DATA D1029N D2209N D2659N D4401N D748N
Contextual Info: ~ ~ ~ B6 - Schaltung Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 930 V 2200 V Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id [°C] [A] [W] 25 844 1132 1182 1446 1901 2965 3215 3690 4067

Contextual Info: DISCONTINUED 08/06/2009 1N5391/S - 1N5399/S 1.5A RECTIFIER Features • • • • • Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Low Reverse Leakage Current Surge Overload Rating to 50A Peak Lead Free Finish, RoHS Compliant Note 3

Contextual Info: 1N5391/S - 1N5399/S 1.5A RECTIFIER Features • · · · · · Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop B A A Low Reverse Leakage Current Surge Overload Rating to 50A Peak Lead Free Finish, RoHS Compliant Note 3