54-PIN TSOP THERMAL RESISTANCE JUNCTION TO CASE Search Results

QFP160-P-2828-0

Abstract: QFP304 TSOP 66 pin Package thermal resistance TSOP 48 thermal resistance bga 208 PACKAGE QFJ32-P-R450-1 SDIP64-P-750-1 SOJ28-P-400-1 QFP208-P-2828-0 TSOP 48 thermal resistance junction to case
Contextual Info: This version: Apr. 2001 Previous version:Jun. 1997 PACKAGE INFORMATION 5. THERMAL-RESISTANCE OF IC PACKAGE This document is Chapter 5 of the package information document consisting of 8 chapters in total. PACKAGE INFORMATION 5. THERMAL-RESISTANCE OF IC PACKAGE

TSOP II 54

Abstract: TSOP 48 thermal resistance junction to case TSOP 48 thermal resistance TSOP 54 thermal resistance
Contextual Info: PRELIMINARY CY14B104L, CY14B104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off automatic STORE on power down with only a small

TSOP 54 PIN

Abstract: TSOP 54 Package CY14B104L CY14B104N
Contextual Info: PRELIMINARY CY14B104L, CY14B104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off automatic STORE on power down with only a small

Contextual Info: PRELIMINARY CY14B104L, CY14B104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off automatic STORE on power down with only a small

Contextual Info: PRELIMINARY CY14B104L, CY14B104N 4-Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off automatic STORE on power down with only a small

Contextual Info: ADVANCE CY14E108L, CY14E108N 8 Mbit 1024K x 8/512K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 1024K x 8 (CY14E108L) or 512K x 16 (CY14E108N) ■ Hands off automatic STORE on power down with only a small

Contextual Info: NTGS4141N, NVGS4141N Power MOSFET 30 V, 7.0 A, Single N−Channel, TSOP−6 Features • Low RDS on • Low Gate Charge • NV Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and

Contextual Info: ADVANCE CY14B108L, CY14B108N 8-Mbit 1024K x 8/512K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N) ■ Hands off automatic STORE on power down with only a small

Contextual Info: ADVANCE CY14E108L, CY14E108N 8 Mbit 1024K x 8/512K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 1024K x 8 (CY14E108L) or 512K x 16 (CY14E108N) ■ Hands off automatic STORE on power down with only a small

TSOP 54 thermal resistance

Abstract: CY7C1069BV33-10ZI SRAM 54-PIN CY7C1069BV33 CY7C1069BV33-10ZC CY7C1069BV33-10ZXC TSOP 54 Package used in where TSOP 48 thermal resistance
Contextual Info: CY7C1069BV33 16-Mbit 2M x 8 Static RAM Features Functional Description • High speed The CY7C1069BV33 is a high-performance CMOS Static RAM organized as 2,097,152 words by 8 bits. Writing to the device is accomplished by enabling the chip (by taking CE

TSOP 54 Package used in where

Abstract: 54-pin TSOP thermal resistance junction to case TSOP 54 thermal resistance CY7C1069BV33 CY7C1069BV33-10ZC CY7C1069BV33-10ZI CY7C1069BV33-10ZXC SRAM 54-PIN TSOP
Contextual Info: CY7C1069BV33 16-Mbit 2M x 8 Static RAM Features Functional Description • High speed The CY7C1069BV33 is a high-performance CMOS Static RAM organized as 2,097,152 words by 8 bits. Writing to the device is accomplished by enabling the chip (by taking CE

CY14B108N-BA25XI

Abstract: 54TSOP
Contextual Info: ADVANCE CY14B108L, CY14B108N 8-Mbit 1024K x 8/512K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N) ■ Hands off automatic STORE on power down with only a small

Contextual Info: PRELIMINARY CY14E104L/CY14E104N 4-Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14E104L) or 256K x 16 (CY14E104N) ■ Hands off automatic STORE on power down with only a small

CY14B104L

Abstract: CY14B104N
Contextual Info: PRELIMINARY CY14B104L, CY14B104N 4-Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off automatic STORE on power down with only a small

TSOP 54 Package

Abstract: TSOP 48 thermal resistance TSOP 54 PIN TSOP 54 Package used in where TSOP II 54 TSOP II 54 Package
Contextual Info: PRELIMINARY CY14B104L/CY14B104N 4-Mbit 512K x 8/256K x 16 nvSRAM Feature Functional Description • 15 ns, 25 ns, and 45 ns access times • Internally organized as 512K x 8 or 256K x 16 • Hands-off automatic STORE on power down with only a small capacitor

TSOP 54 Package

Abstract: CY14B104L CY14B104N
Contextual Info: CY14B104L, CY14B104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off Automatic STORE on power down with only a small

Contextual Info: CY14B104L, CY14B104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off Automatic STORE on power down with only a small

Contextual Info: ADVANCE MT5C256K16B2 256K X 16 SRAM |u i i c : r o n 2 5 6 K x 16 S R A M SRAM FEATURES PIN ASSIGNMENT Top View • High speed: 12,1 5 , 20, 25 and 35ns • Multiple center power and ground pins for improved noise immunity • Single +5V ±10% power supply

NTGS4141NT1G

Abstract: NTGS4141N NTGS4141NT1
Contextual Info: NTGS4141N Power MOSFET 30 V, 7.0 A, Single N−Channel, TSOP−6 Features • Low RDS on • Low Gate Charge • Pb−Free Package is Available http://onsemi.com Applications RDS(on) TYP V(BR)DSS • Load Switch • Notebook PC • Desktop PC ID MAX 21.5 mW @ 10 V

Contextual Info: ADVANCE CY14E102L, CY14E102N 2-Mbit 256K x 8/128K x 16 nvSRAM Features Functional Description • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 256K x 8 (CY14E102L) or 128K x 16 (CY14E102N) ■ Hands off automatic STORE on power down with only a small

CY14B102N

Abstract: CY14B102L
Contextual Info: ADVANCE CY14B102L, CY14B102N 2-Mbit 256K x 8/128K x 16 nvSRAM Features Functional Description • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 256K x 8 (CY14B102L) or 128K x 16 (CY14B102N) ■ Hands off automatic STORE on power down with only a small

Contextual Info: CY7C1069G CY7C1069GE PRELIMINARY 16-Mbit 2 M words x 8 bit Static RAM with Error-Correcting Code (ECC) 16-Mbit (2 M words × 8 bit) Static RAM with Error-Correcting Code (ECC) Features an error indication pin (ERR) that signals the host processor in the case of an ECC error-detection and correction event.

Contextual Info: NTGS4141N Power MOSFET 30 V, 7.0 A, Single N−Channel, TSOP−6 Features • Low RDS on • Low Gate Charge • Pb−Free Package is Available http://onsemi.com Applications RDS(on) TYP V(BR)DSS • Load Switch • Notebook PC • Desktop PC ID MAX 21.5 mW @ 10 V

Contextual Info: NTGS4141N Power MOSFET 30 V, 7.0 A, Single N−Channel, TSOP−6 Features • Low RDS on • Low Gate Charge • Pb−Free Package is Available http://onsemi.com Applications V(BR)DSS • Load Switch • Notebook PC • Desktop PC RDS(on) TYP ID MAX 21.5 mW @ 10 V