550JUW Search Results

Contextual Info: KM684000/L/L-L CMOS SRAM 524, 288 WORD X 8 Bit High Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 55, 70, 8 5 ,100ns Max. • Low Power Dissipation Standby (CMOS) : 2.57mW(Max) 550juW(Max.) L-Version 110/*W(Max.) L-L-Verslon Operating

D27C64

Abstract: intel D27c64 rt 7257 NEC D27C64 ha 11747 D27C64 intel nec A2C 71454 upd27c64
Contextual Info: ì ; SEC OM ,y NEC Electronics Inc. 006074 Pin C onfiguration A d is tin c tiv e fe atu re o f the ¿/PD27C64 is an o u tp u t enable OE separate fro m the c h ip enable (CE). The OE c o n tro l elim ina tes bus c o n te n tio n in m u ltip le -b u s m icro p ro c e s s o r systems. The//P D 27C 6 4 features fast,

MBM27C512-25

Abstract: 27C512-20
Contextual Info: CMOS UV ERASABLE 524288-BIT READ ONLY MEMORY MBM 27C512-20-W MBM27C512-25-W August 1988 Edition 1.0 CMOS524288 BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C512 is a high speed 524,288 b it static CMOS erasable and e lectrically reprogrammable read only memory EPROM}. It is especially

Contextual Info: FU JITSU CMOS UV ERASABLE 524288-B IT READ ONLY MEMORY M BM 27C512-20-W MBM27C512-25-W A ugust 1988 E d itio n 1.0 CMOS 524288 BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C512 is a high speed 524,288 bit static CMOS erasable