550NW Search Results

Contextual Info: KM681000BLE / BLE-L CMOS SRAM 128Kx8 Bit Extended Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Temperature Range : -25 to 85°C • Fast Access Time : 70,100 ns Max. • Low Power Dissipation Standby (CM O S): 550nW(Max.)L-Ver.

Contextual Info: Preliminary CMOS SRAM KM6161OOOBL / L-L 64Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby(CMOS) :550nW(max.)L-Version :110|iW(max.)LL-Version Operating : 660mW (max.) • Single 5V±10% Power Supply

Contextual Info: Prelimianry CMOS SRAM KM684000AL / AL-L 512Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns Max. • Low power dissipation - Standby(CMOS) : 550nW (Max.) L Version : 110|iW(Max.) L-L Version - Operating : 385mW /MHz(Max.)

KM62256CLI

Abstract: U813
Contextual Info: CMOS SRAM KM62256CLI / Ll-L 32Kx8 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION > Industrial Temperature Range : -40 to 85°C • Fast Access Time : 70,100 ns max. • Low Power Dissipation Standby (C M O S ): 550nW (Max.)L-Ver.

Contextual Info: KM62256CLE / LE-L CMOS SRAM 32Kx8 Bit Extended Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Temperature Range : -25 to 85°C • Fast Access Time : 70,100 ns max. • Low Power Dissipation Standby (C M O S ): 550nW (Max.)L-Ver.

M5M23160

Abstract: M5M23160XXXP M5M23160-XXXP M5M23160XXXFP
Contextual Info: MITSUBISHI LS Is M5M231 eO-XXXP.FP.VP.RV 16777216-BIT 1048576- WORD BY 16-BIT CMOS MASK-PROGRAMMABLE ROM /16777216-BIT (2097152-WORD BY 8-BIT) CMOS MASK-PROGRAMMABLE ROM DESCRIPTION The M5M23160-XXXP(,FP,VP or RV)is a 16777216-bit mask-programmable high speed read-only memory.

67C402

Contextual Info: a 67C401/13 67C402/23 First-In First-Out FIFO 64x4, 64x5 CMOS MEMORY Advanced Micro Devices 25/35 MHZ (Cascadable) FEATURES ORDERING INFORMATION 67 C 401 - 35 N • Zero standby power • High-tpeed 35-MHz shlft-ln/shlft-out rate* OPERATING — _ CONDITIONS

69406-1

Contextual Info: MITSUBISHI LS Is M5M23800-XXXP,FP,VP,RV 8388608-BIT 524288- WORD BY 16-BIT CMOS MASK-PROGRAMMABLE ROM /8388608-BIT (1048576-WORD BY 8-BIT) CMOS MASK-PROGRAMMABLE ROM DESCRIPTION The M5M23800-XXXPCFP.VP or RV)is a 8388608-bit maskprogrammable high speed read-only memory.

Contextual Info: MITSUBISHI LS Is M5M23800-XXXP,FP,VP,RV 8388608-BIT 524288- WORD BY 16-BIT CMOS MASK-PROGRAMMABLE ROM /8388608-BIT(1048576- WORD BY 8-BIT) CMOS MASK-PROGRAMMABLE ROM DESCRIPTION The M5M23800-XXXP(,FP,VP or RV)is a 8388608-bit maskprogrammable high speed read-only memory.

MS6264L-10PC

Abstract: MS6264L-10 MS6264-10PC MS6264L-70PC Mosel MS6264 MS6264L-10FC MS6264L-70FC MS6264-70PC r7777T MS6264L-70
Contextual Info: MOSEL MS6264 8K x 8 CMOS Static RAM FEATURES DESCRIPTION • Available in 70/100 ns Max. The M OSEL MS6264 is a high performance, low power CM OS static RAM organized as 8192 words by 8 bits. The device supports easy m em ory expansion with both an active LOW chip enable (Et) and an active High chip

burn-in

Contextual Info: æ HS-6551RH HARRIS S E M I C O N D U C T O R Radiation Hardened 256 x 4 CMOS RAM December 1992 Features Pinouts • Functional Total Dose 2 x 104 RAD SI HS1-6551RH 22 PIN CERAMIC DIP CASE OUTLINE D7, CONFIGURATION 3 TOP VIEW • Latch-Up Free To > 5.0 x 1011 RAD(SI)/s

28HC291L

Abstract: HC291-55D
Contextual Info: AT28HC291/L Features • • Fast Access Time - 35ns Low Power Dissipation 100 |iA Standby Current AT28HC291L 80 mA Active Current • E2PROM Technology -100% Reprogrammable • Direct Replacement for Bipolar PROMs • Reprogrammable 1000 times • Chip Clear

Contextual Info: Ei 1 MITSUBISHI LS Is 'V f M5M23160-XXXP,FP,VP,RV 16777216-BIT 1048576- WORD BY 16-BIT CMOS MASK-PROGRAMMABLE ROM /16777216-BIT (2097152- WORD BY 8-BIT) CMOS MASK-PROGRAMMABLE ROM DESCRIPTION The M 5M 23160-XXXP(,FP,VP or RV)is a 16777216-bit mask-programmable high speed read-only memory.

Contextual Info: MOSEL PRELIMINARY MS62256A 32K X 8 High Speed CMOS Static RAM FEATURES DESCRIPTION • High-speed - 25/30/35/45/55 ns The MOSEL MS62256A is a 262,144-bit static random access memory organized as 32,768 words by 8 bits and operates from a single 5 volt supply. It is built with