5516 DIODE Search Results

5516 DIODE

Contextual Info: A S E A Û3 BRO üJN/ABB s e m i c o n Netz-Thyristor-M odule D I □□4Û3DÛ 7 T - 25-23 Phase control Thyristor-Modules Daten pro Diode oderThyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor V r rm V drm

mcc 55-12

Abstract: mcc 40-12 MCC 65-16 ABB mcc mcc 65-12 MCC 55-08 mcc 55-16 MCC 40 -14io8 ABB mcc 40-12 MCC 40 -12io8
Contextual Info: A S E A Û3 BRO üJN/ABB s e m i c o n Netz-Thyristor-Module D I □□4Û3DÛ 7 T - 25-23 Phase control Thyristor-Modules Daten pro Diode oderThyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor V r rm V drm

25-12io8

Abstract: MDC 1200 DIODE mdc 40-14 MCO 1510 MCd 25-04 ABB thyristor modules ASEA thyristor mdc 55-04 hs 50 abb E72873
Contextual Info: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-Module d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z5-Z3 Phase control Thyristor-Diode-Modules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

Contextual Info: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-M odule d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z 5 -Z 3 Phase control Thyristor-Diode-M odules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

AC 5506

Abstract: PMB24-115-4B 120FP-45 9225B PM080-230-1225BT-4 PM040-115-9225BT-4 120FGM
Contextual Info: Short Form Catalog 2010 Tubeaxial Cooling Fans, Radial Blowers & Heat Sink Fans Featuring: Ball Bearing Dependability International Safety Standards Locked Rotor and Polarity Protection Custom Cable/Connector Assemblies Silent Operation 720 Palomar Avenue

do-214ac

Contextual Info: Zener Regulator Diodes Part N um ber Package Outline Type M il j Data P ow er Vz <W • V) Spec ' S h e e t ID Izt Zzt Zzk ■ <mA) j ( n ) ! < n ) IR (uA) VR (V) Toi. : <+/-%)! SM A J4752A SMA J4752C Scottsdale DO-214AC SM 22273 2 33 7,5 45 1000 5 25.1

Z17D

Abstract: Z27D Z24D Z11D 6/18/Z11D
Contextual Info: Silicon zener diodes. 3 Watts T he plastic m aterial c arrie s U /L reco g n itio n 9 4 V -0 . 3 E Z 3 .9 0 5 /S Z 5 5 S e n e s . 3 .0 W atts. C ase ; D O -41/SM A O utline î 2/7 N om inal Z ener V oltage TYPE A xial Lead | S.M .D . M axim um R everse L eakage C urrent

BCP56TA

Abstract: BCP55-16 BCP51 BCP5516TA bcp54ta BCP5410
Contextual Info: BCP 54 / 55 / 56 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features • • • • • • • • Mechanical Data • • IC = 1A Continuous Collector Current Low Saturation Voltage VCE sat < 500mV @ 0.5A Gain groups 10 and 16 Epitaxial Planar Die Construction

ic 5518

Abstract: 5518 ic LA 5530 8 pin IC h002 ic 5534 ic an 5534 HSCH-5520 la 5531
Contextual Info: Whp% wL'nM HEWLETT PACKARD Beam Lead Schottky Diode Pairs for Mixers and Detectors Technical Data HSCH-5500 Series Features • Monolithic Pair Closely Matched Electrical Parameters • Low Capacitance 0.1 pF Maximum at 0 Volts • Low Noise Figure Guaranteed 7.5 dB at 26 GHz

BCP5616

Abstract: BCP5410
Contextual Info: BCP 54 / 55 / 56 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Mechanical Data Features • • • • • • • • • • IC = 1A Continuous Collector Current Low Saturation Voltage VCE sat < 500mV @ 0.5A Gain groups 10 and 16 Epitaxial Planar Die Construction

SMD MARKING CODE sdp

Abstract: kondensatoren np0
Contextual Info: INDUCTORS | CAPACITORS | PIEZO CERAMICS Firmenprofil Company Profile Wir sind ein traditionsreicher Hersteller passiver elektronischer Komponenten mit Sitz in Neumarkt i. d. Opf. Die im Dezember 1999 gegründete STELCO GmbH ging aus der bereits im Jahre 1922 entstandenen Stettner GmbH

BCP5616

Abstract: BCP5410
Contextual Info: BCP 54/ 55/ 56 NPN MEDIUM POWER TRANSISTORS IN SOT223 Features Mechanical Data • BVCEO > 45V, 60V & 80V   IC = 1A High Continuous Collector Current   ICM = 2A Peak Pulse Current   2W Power Dissipation Low Saturation Voltage VCE sat < 500mV @ 0.5A

BCP5616QTA

Abstract: AECQ-101 5616 BCP5410
Contextual Info: BCP 54/ 55/ 56 NPN MEDIUM POWER TRANSISTORS IN SOT223 Features Mechanical Data • BVCEO > 45V, 60V & 80V • • IC = 1A high Continuous Collector Current • Case Material: Molded Plastic. “Green” Molding Compound. • ICM = 2A Peak Pulse Current •

B2HKF

Abstract: B2U 250 105-14N 40-08N B2HKF 250 160-14N 22-16 diode 15-16io5 13-12A02 S 4012 R
Contextual Info: ¡bihi; 1~ Rectifier Bridges ! L -w — L -H - 1 ! 1~ Rectifier Bridges with Avalanche Diodes, B2U 1 v vRMS IdAV ^@ T C *FSM V T0 rT ^ th J C 45° C 10 ms A V mQ ‘C 2.5 40 3.0 0.75 3.4 0.85 3.4 2.8 0.7 3.2 0.8 3.4 VBO 13-12A 02 VBO 13-16A 02 1200 1600 400

8bit latch 74ls

Abstract: 74LS363 5v vcc buffer latch
Contextual Info: 74LS363 Signetics Latch Octal Transparent Latch With 3-State Outputs Product Specification Logic Products FEATURES • 8-bit transparent latch • 3-state MOS compatible output buffers • Common Latch Enable input with hysteresis • Common 3-state Output Enable

thyristor MTT 25 N 14

Abstract: E72873 13-14N02 ls 7472 25-16N02 vuo 35-12n07 36-16io1 VHF15-16 50-04N03 mtt 95 a 12 n
Contextual Info: e I Rectifier Bridges, 1~ ki L-n — —N— Rectifier Bridges, 1 ~ with DCB-Ceram ic Base V *BMS 'd *v @ T c Type *F3U 45°C 10 ms A Vto rF ^VJM V »c K/W 85 220 0.85 m il 17 150 5.6 K/W 0.4 § E 72 873 (M) > New V VBO 13-16N02 • VBO 13-14N02 VBO 13-12N02

din IEC 68

Abstract: 150a gto GTO 100A IXYS 40N60A D-68623 DWEP 17-12 DWEP DWlP 2580B L 7CG
Contextual Info: Contents Page Symbols and Definitions Nomenclature General Information Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types S-Series, SCSOA Capability, Fast Types

truth table NOT gate 74

Abstract: LS365A truth table 74LS365A SN54LSXXXJ SN74LSXXXD SN74LSXXXN 74ls367a LS366
Contextual Info: SN54/74LS365A SN54/74LS366A SN54/74LS367A SN54/74LS368A 3-STATE HEX BUFFERS These devices are high speed hex buffers with 3-state outputs. They are organized as single 6-bit or 2-bit / 4-bit, with inverting or non-inverting data D paths. The outputs are designed to drive 15 TTL Unit Loads or 60 Low Power

LA 5530

Contextual Info: HEWLETT-PACKARD/ nt CHPNTS b lE D H 4 4 4 7 5 A 4 DDDT5Ô6 0 5 b W h n l HEWLETT HHPA %LtJÊ PACKARD B eam L ead Schottky D iode P airs for M ixers and D etectors Technical Data HSCH-5500 Series Features • Monolithic Pair • • • • • • Closely Matched Electrical

MPC5515

Abstract: mpc5516 mpc5517 e9739 e10483 osc 49-68 MPC5510* errata NEXUS FLASH ERASE AN15 MPC5510
Contextual Info: MPC5510 MCU Family, Rev. A Device Errata Errata and Information Summary ID before 15 MAY 2008 ID after 15 MAY 2008 Errata Title N/A 10532 32KOSC: 32 KHz OSC and PK1/AN15 2297 7062 BAM: Serial download unavailable to last 16 bytes 4 words of System RAM 1123

Contextual Info: tß Semiconductor LF442 Dual Low Pow er JF E T Input O perational A m plifier General Description Features The LF442 dual low power operational amplifiers provide many of the same AC characteristics as the industry stan­ dard LM1458 while greatly improving the DC characteristics

MPC5516

Contextual Info: Freescale Semiconductor Mask Set Errata MPC551X_REVA Rev. 23 OCT 2012 Mask Set Errata for Mask REVA Introduction This report applies to mask REVA for these products: • MPC551X ID before 15 MAY 2008 ID from 15 May 2008 to 30 JUNE 2010 ID after 1 JULY 2010

bruce

Abstract: 37C16 37D16 37A16 37B16 Mitsubishi Electronics America
Contextual Info: MITSUBISHI MICROCOMPUTERS M16C Group - Application Note SINGLE-CHIP 16 BIT CMOS MICROCOMPUTER M16C/62 2 <Simple I C Bus Mode> Application Note Rev. A I2C is a trademark of Philips Corporation  2000 Mitsubishi Electric Specification subject to change without notice

74HC4316

Abstract: ic fa 5518 sa414
Contextual Info: MOTOROLA SC L O G I C blE D • b3ti72SE ODREISO 705 « H O T M MOTOROLA ■ I SEMICONDUCTOR TECHNICAL DATA MC54/74HC4316 J SUFFIX CERAMIC CASE 620-09 Quad Analog Switch/ Multiplexer/Demultiplexer with Separate Analog and Digital Power Supplies N SUFFIX