552 DIODE Search Results

IXYS MCC 425

Abstract: IXYS MCC 550
Contextual Info: Date: 27.06.2012 IXYS Data Sheet Issue: 2 Thyristor/Diode Modules M## 552 Absolute Maximum Ratings VRRM VDRM [V] MCC MCD MDC 1200 552-12io2 552-12io2 552-12io2 1400 552-14io2 552-14io2 552-14io2 1600 552-16io2 552-16io2 552-16io2 VOLTAGE RATINGS VDRM VDSM

Contextual Info: User's Guide SLUUB75 – February 2015 Using the UCC28730EVM-552 10-W Adaptor Module With PSR and Wake-Up Monitor The UCC28730EVM-552 evaluation module is a 10-W off-line discontinuous mode DCM flyback converter that provides constant-voltage (CV) and constant-current (CC) output regulation without the use

Contextual Info: RS ITEM NO 204-552 SIGNO ITEM NO MGYM28 LED/Multiled Multi-led Optimum voltage V 28Vdc Mounting Size T1 3/4 Rectifier - Mounting Finish Midget Groove AC current - Protection Protection Diode DC current 15mA Mount Holder Midget Groove Voltage Tolerance(%)

Contextual Info: Advanced SSP6N70A Power MOSFET FEATURES BVDSS • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 700V B Low Rds(0n) ■ "I -552 £1 (Typ.) CD Rugged Gate Oxide Technology

SHD225604

Contextual Info: SENSITRON SEMICONDUCTOR SHD225604 TECHNICAL DATA DATA SHEET 552, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 200 Volt, 0.045 Ohm, 50A MOSFET • Isolated Hermetic Metal Package • Low RDS on MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED.

bvn 10

Contextual Info: SSF6N70A Advanced Power MOSFET FEATURES BV0SS - 70GV ^DS on = 1.8 n h < in Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 MA(Max ) @ Low Rqs(on) : 1-552 i2 (Typ.)

rdb5

Abstract: DS21554LN DS21354 DS21354L DS21354LN DS2153 DS21554 DS21554L rectifier circuit board ESR 48
Contextual Info: DS21354 3.3V and DS21554 (5V) E1 Single Chip Transceivers (SCT) www.dalsemi.com FEATURES Large counters for bipolar and code violations, CRC4 code word errors, FAS word errors, and E bits IEEE 1149.1 JTAG-Boundary Scan Architecture Pin compatible with DS2154/52/352/552 SCTs

PDB554

Abstract: PDS51 mother board power reset pin connect
Contextual Info: PDB554 Philips PDB554 Daughter Board n Hardware description The combination of your PDS51 or PDS51-Mk2 mother board and your PDB554 daughter board produce a powerful, fully featured, real time development system for ROMless, Masked ROM, and EPROM versions of 8xC51, 652, 654, 552, 554, and 562

Contextual Info: p PriM 9H 8!! iQ Q Q Revised A ugust 1999 EMICONDUCTGRTM 74F552 Octal Registered Transceiver with Parity and Flags General Description Features The 74F 552 octal transceiver contains tw o 8-bit registers for te m p o ra ry storage o f data flowing in either direction.

NC1002

Abstract: NeuriCam NC1001 "frame grabber" ESS Technology Image Sensor
Contextual Info: Digital Camera NC1002 NeuriCam Via Santa Maria Maddalena 12, 38100 Trento, Italy tel. +39-0461-260 552 - fax + 39-0461-260 617 e-mail: info@neuricam.com; http: www.neuricam.com NC1002 256 x 256 Digital Camera DATA SHEET Rel. 11/99 KEY FEATURES • • •

NeuriCam

Abstract: fingerprint image sensor NC1001 fingerprint image-sensor optical fingerprint sensor CMOS image sensor fingerprint circuit analog digital 14 bit camera sensor "frame grabber" cmos camera CIRCUIT diagram
Contextual Info: Digital Camera NC1001 NeuriCam Via Santa Maria Maddalena 12, 38100 Trento, Italy tel. +39-0461-260 552 - fax + 39-0461-260 617 e-mail: info@neuricam.com; http: www.neuricam.com NC1001 256 x 256 Digital Camera DATA SHEET Rel. 5/99 KEY FEATURES • • • •

Contextual Info: SSH6N70A Advanced Power MOSFET FEATURES BV0SS = 700 V ^DS on = 1.8 £2 < CD Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 nA (M ax) @ Low Rdsjon) •*1-552 £2 (Typ.)

SSF6N70A

Contextual Info: SSF6N70A Advanced Power MOSFET FEATURES BV0SS = 700 V ^DS on = 1.8 Q < Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 nA (Max.) @ VDS= 700V Low RDS(on) : 1-552 ft (Typ.)

SSH6N70A

Contextual Info: Advanced SSH6N70A Power MOSFET FEATURES B^D SS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 700V H Low Rds(0n) ■ "I -552 £1 (Typ.)

74LVQ125

Contextual Info: b S 0 1 1 2 2 007 »31b 552 -CLOGI b3E D National Semiconductor NSC1 August 1993 54LVQ/74LVQ125 Low Voltage Quad Buffer with TRI-STATE Outputs General Description Features The 'LVQ125 contains four independent non-inverting buff­ ers with TRI-STATE outputs.

Hitachi DSA002780

Contextual Info: 2SK2929 Silicon N Channel MOS FET High Speed Power Switching ADE-208-552 Target Specification 1st. Edition Features • Low on-resistance RDS = 0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2929 Absolute Maximum Ratings Ta = 25°C

Contextual Info: 2SK2929 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-552 Target Specification 1st. Edition Features • Low on-resistarice R ds = 0.026 Q typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline T O -2 2 0 A B

Contextual Info: 802 Series 802 Series 803 Series 51h Inches Dim. .056-.066 .052-.072 1.115-1.135 .552-.572 .490-.510 .180-.200 DIA. .750 MAX. .302-.322 A B C D E F G H hAi nn Millim eter 803 Series ¡~n i n Inches Dim. Repetitive Peak Reverse Voltage Microsemi Catalog Number

HD74HCT242

Abstract: DP-14 FP-14DA HD74HCT243 Hitachi DSA00223
Contextual Info: HD74HCT242/HD74HCT243 Quad. Bus Transceivers with 3-state outputs ADE-205-552 (Z) 1st. Edition Sep. 2000 Description The HD74HCT242 is an inverting buffer and the HD74HCT243 is a noninverting buffer. Each device has one active high enable (GBA), and one active low enable (GAB). GBA enables the A outputs and GAB

NDL5731P

Abstract: DL-5735 DL5735 DL-57
Contextual Info: N E C ELECTRONI CS INC bSE D • bME7SES 0037=552 'JOT INECE DATA SHEET NEC LASER DIODE MODULE NDL5 7 3 1 P ELECTRON DEVICE 1 310 nm O PTICA L FIBER COM M UNICATIONS InGaAsP DC-PBH LASER DIODE MODULE DESCRIPTION NDL5731P is a 1 310 nm laser diode DIP module with singlemode fiber and internal thermo-electric cooler. It is designed for a

d 4464 c

Contextual Info: 552 EHSemiconductor National 54F/74F552 Octal Registered Transceiver with Parity and Flags General Description T h e 'F552 octa l transceiver co ntains tw o 8-bit registers fo r te m p o ra ry storage o f data flow ing in e ithe r direction. Each register has its own clo ck pulse and clo ck enable input as

rtd pt100 interface to 8051

Abstract: 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 8051 microwave oven design of FM transmitter final year project project pic 16f84 pwm "white led" 5mm
Contextual Info: INDEX Order Code Description _ 102-271 794-740 102-246 794-752 101-930 102-283 101-886 101-953 _ _ 688-137 688-149 _ _ 597-387 705-536 473-728 473-753 473-730 473-741 473-881 _ _ _ 690-648 690-703 690-636 791-180 _ 791-805 _ 101-564 101-540 101-552 101-515

12 H 803

Abstract: V803
Contextual Info: 802 Series 803 Series 802 Series » + n rn 1 T " c > o _ .056-.066 .052-.072 1.115-1.135 .552-.572 .490-.510 .180-.200 DIA. .750 MAX. .302-.322 A B C D E F G H hAi i i " Inches Dim. n rn H 1- 1.42-1.68 1.32-1.83 28.32-28.83 14.02-14.53 12.45-12.95 4.57-5.08 DIA.

Contextual Info: HC-5524 Semiconductor August 1998 EIA/ITU 24V PABX SLIC with 25mA Loop Feed File Number 2798.5 Features • DI M on olithic High Voltage Process T he H C -552 4 tele ph on e S u b scrib e r Line Interface C ircuit integrates m ost o f the B O R S C H T fun ctions on a m on olithic