556 ITT Search Results

Contextual Info: PART LED COL OR NUMBER NOMI NAL RA T 1NG I NTENSI TY f L @ TYP VOLTAGE REV. RED 74 VDC 1300 20 556-3706-823 A MB E R 74 VDC 1300 20 NEOPRENE GA SK ET . 06 2 THICK 6 0 - 7 0 DUROMETER DRN. CKD. APP. R EVI SI ON S A CURRE N T ( m A ) 556-3506-815 ECN NO.

ic 558

Abstract: ic 556 transistors BC 548 BC 558 ic 556 specifications BC557 BC558 556 driver BC558 driver bc 558 transistors BC 548 BC 558 PNP
Contextual Info: BC 556 • BC 557 • BC 558 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendung: Vor- und Treiberstufen Applications: Pre and driver stages Besondere Merkmale: Features: • Verlustleistung 500 mW • Power dissipation 500 m W

Contextual Info: M AXIM UM RATINGS Symbol Value Unit C o lle cto r-E m itte r Voltage Rating VCEO 20 Vdc C ollector-Base Voltage VCBO 30 Vdc Em itter-Base Voltage vebo 5.0 Vdc lc 100 m A dc Symbol M ax Unit PD 225 mW 1.8 m W /DC RflJA 556 °C/W PD 300 mW 2.4 mW/°C RflJA 417

Contextual Info: M AXIMUM RATINGS Symbol Value C o llector-E m itter Voltage Rating v CEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc Em itter-Base Voltage Vebo 6.0 Vdc 'c 50 m Adc Symbol Max Unit Pd 225 mW 1.8 m W . 't r o ja 556 CC/W pd 300 mW 2.4 m W :’C r 0JA 417 CC/W

MMBT6520

Contextual Info: MAXIMUM RATINGS Rating Symbol Value Unit C o llector-E m itter Voltage v CEO - 350 Vdc C ollector-Base Voltage v CBO - 350 Vdc Em itter-Base Voltage v EBO - 5 .0 Vdc -250 mA !C - 500 m Adc Symbol Max Unit pd 225 mW 1.8 m W .'C R* j a 556 xw pd 300 mW 2.4 m W '"C

Contextual Info: MAXIMUM RATINGS Rating Symbol Value Unit C o lle cto r-E m itte r Voltage VCES -3 0 Vdc C ollector-Base Voltage VCBO -3 0 Vdc Em itter-Base V o ltage V£BO -1 0 Vdc 'c - 500 m A dc Symbol Max Unit Pd 225 mW 1.8 mW/°C Rs j a 556 °C/W Pd 300 mW 2.4 mW/°C

Contextual Info: MAXIMUM RATINGS Rating Symbol Value C o llector-E m itter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 120 Vdc Em itter-Base Voltage vebo 5.0 Vdc lc 100 mA Symbol M ax Unit PD 225 mW 1.8 m W-'C Ro ja 556 °C W Pd 300 mW 2.4 mW/°C r 9JA 417 °C'W T j. Tstq

Contextual Info: MAXIMUM RATINGS R atin g Sym bol V alu e C o lle cto r-E m itte r Voltage VCEO -1 5 0 Unit Vdc C ollector-Base Voltage VCBO - 160 Vdc Em itter-Base Voltage Ve b o MMBT5401LT1* - 5.0 Vdc - 500 m Adc Symbol Max U n it Pd 225 mW 1.8 m w rc R»j a 556 °C/W pd

2N6426

Abstract: marking QE
Contextual Info: M A X IM U M RATINGS Rating Symbol Value Unit C o llector-E m itter Voltage v CEO 40 Vdc Collector-Base Voltage VCBO 40 Vdc Em itter-Base Voltage vebo 12 Vdc 'C 500 m Adc Symbol Max Unit Pd 225 mW 1.8 m W *C r !JA 556 =C,W Pd 300 mW 2.4 m W .X r 8JA 417 CC'W

bc 339

Abstract: bc560 bc558c cbc560 bc557 bc560c ic 556 BC556A AMI siemens BC557B
Contextual Info: SIE D SIEM ENS • fl235b05 O O m b l b ÔTb « S I E G SIEMENS AKTIENGESELLSCHAF T v fl- Z l PNP Silicon AF Transistors • • • • BC 556 . BC560 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 546, BC 547,

transistor 6D sot23

Abstract: transistor jfet 2N5457 MMBF5457LT1
Contextual Info: MMBF5457LT1* M A XIM U M RATINGS Rating Symbol Value Unit Drain-Source Voltage VDS 25 Vdc Drain-Gate Voltage VDG 25 Vdc v GS r 25 Vdc 'G 10 mAdc Symbol Max Unit Pd 225 mW 1.8 m w rc Roja 556 °C/W TJ' Tsta - 55 to +150 °C Reverse Gate-Source Voltage Gate Current

427k2

Contextual Info: Product specification Philips Semiconductors-Signetlcs Linear Products Switched-mode power supply control circuit PIN CONFIGURATION DESCRIPTION FEATURES The N E /S E 556 2 is a s in g le -o u tp u t control circuit fo r sw itch e d -m o d e p o w e r supplies.

KN SOT23

Abstract: 2N50M
Contextual Info: MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage Rating v CEO -5 0 Vdc Collector-Base Voltage VCBO -5 0 Vdc Emitter-Base Voltage v EBO -3 .0 Vdc ic -5 0 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RtfJA 556 °c/w PD 300 mW 2.4 mW/°C 417 °C/W - 55 to + 150

BTA64LT1

Contextual Info: M AXIM UM RATINGS Rating Symbol Value Unit C o llecto r-Em itter Voltage V cES - 30 Vdc C o llecto r-Base Voltage VCBO - 30 Vdc Em itter-Base Voltage Ve b o -1 0 Vdc 'c -500 m Adc Symbol Max Unit PD 225 mW 1.8 mW/°C r #j a 556 eC/W PD 300 mW 2.4 mW/°C r<

Contextual Info: MAXIMUM RATINGS Rating Symbol Value U n it C o lle cto r-E m itte r V o ltage VCES 30 Vdc Co Ilector-Base V o ltage v CBO 30 Vdc E m itter-Base Voltage vebo 10 Vdc 'C 300 m A dc Symbol M ax Unit PD 225 mW 1.8 mW/°C RtfJA 556 °C/W PD 300 mW 2.4 mW/°C r «JA

Contextual Info: M AXIM U M RA TIN G S Symbol Value Unit C o lle cto r-E m itte r Voltage VCEO 140 Vdc Collector-B ase V o ltage VCBO 160 Vdc Em itter-Base Voltage v EBO 6.0 Vdc ic 600 m A dc Symbol Max Unit Pd 225 mW 1.8 m W /X Rb j a 556 °C/W Pd 300 mW 2.4 mW/°C r #j a

mbt9

Contextual Info: MAXIMUM RATINGS Rating C o lle cto r-E m itte r V o ltage C ollector-B ase V o ltage Em itter-B ase V o ltage Symbol Value v CE0 15 Vdc VCBO 30 Vdc vebo 3.0 Vdc lc 50 m A dc Symbol Max Unit PD 225 mW 1.8 mW/°C r 0JA 556 °C/W Pd 300 mW 2.4 mW/°C R9JA 417

MC10116

Abstract: MC10115 application designing with mecl 10,000 1R74 AN556 application note MC10115 AN-556 MC10102 MC10116 application MOTOROLA Semiconductor Data Library Volume 3 1974
Contextual Info: AN-556 A p p lic a tio n N o te INTERCONNECTION TECHNIQUES FOR MOTOROLA’S MECL 10,000 SERIES EMITTER COUPLED LOGIC Prepared by T o m B alph Applications Engineering T his application note describes some of the characteristics o f high speed digital signal lines and gives w iring rules fo r M EC L

bfj310

Abstract: marking HO SOT23
Contextual Info: MMBF1309LT1* MMBFJ310LT1* MAXIMUM RATINGS CASE 318-07, STYLE 10 SOT-23 TO-236AB Symbol Value Unit D rain-S ource Voltage Vds 25 Vdc G ate-Source Voltage Vg s 25 Vdc 'G 10 m A dc Symbol Max Unit Pd 225 mW 1.8 m w rc Fl «JA 556 °C/W TJ ’ Tsta - 55 to + 15 0

Contextual Info: M AXIM UM RATINGS Rating Symbol Value C o llector-E m itter Voltage v CEO „4 0 Vdc Collector-Base Voltage v CBO -4 0 Vdc v EBO -5 .0 Vdc 'c -6 0 0 m Adc Symbol Max Unit PD 225 mW 1.8 m W /cC r h ja 556 ’CW Pd 300 mW 2.4 m W ,t r </JA 417 CC/W Em itter-Base Voltage

2N390S

Contextual Info: M AXIM U M RATINGS Rating Symbol Value Unit v CEO -4 0 Vdc Collector-Base Voltage VCBO -4 0 Vdc Em itter-B ase V o ltage v EBO - 5 .0 Vdc 'c -2 0 0 m A dc Symbol M ax Unit PD 225 mW 1.8 mW/°C R& ja 556 °C/W PD 300 mW 2.4 mwrc Rö j a 417 °C/W T j. Tstg

BCW61ALT1

Contextual Info: MAXIMUM RATINGS Rating Symbol Value Unit VCEO -3 2 V Collector-Base Voltage VCBO -3 2 V Em itter-Base Voltage Ve b o - 5 .0 V lc -1 0 0 m Adc Symbol M ax Unit Pd 225 mW 1 .8 m W t r 9JA 556 3C/W Pd 300 mW 2.4 m W 'X Rô ja 417 C'W T J ' T Stq - 5 5 to +150

Contextual Info: M A X I M U M R A T IN G S Sym bol Value Unit Collector-Emitter Voltage Rating VCEO 80 Vdc Collector-Base Voltage VCBO 120 Vdc Emitter-Base Voltage vebo 5.0 Vdc >C 100 mA Symbol Max Unit Pd 225 mW 1.8 mW/°C R« j a 556 °c/w Pd 300 mW 2.4 mW/°C RflJA 417

function pin configuration ic 74244

Abstract: IC 556 pin DIAGRAM 74244 BUFFER IC ic 74244 74244 features buffer 74244 W83768
Contextual Info: W83768 I/O COUPLER GENERAL DESCRIPTION The W83768 is an l/O-coupler chip that includes six line drivers 1488 , ten line receivers (1489), two timers (556), and one 244-type buffer block for game port signals. It also supports a power-down control circuit to reduce power consumption. This chip is intended for use with an I/O controller, and it