55B MOSFET Search Results

11-PIN

Abstract: OM6421SP6 OM6422SP6 reliability VP5 250-1000mA 411R1
Contextual Info: Preliminary Data Sheet OM6421SP6 OM6422SP6 POWER MOSFETS IN 11-PIN INDUSTRIAL SIP PACKAGE Complementary N-Channel and P-Channel Power MOSFETs In SIP Package FEATURES • • • • Low RDS on Fast Switching Small S IP Package “H” Bridge Configuration

J50 mosfet

Abstract: IRLSZ24A T0-220F
Contextual Info: IRLSZ24A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ B V dss = 60 V Logic Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower fnput Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 HA Max. @

FDC655BN

Contextual Info: FDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET Features General Description • 6.3 A, 30 V. RDS ON = 25 mΩ @ VGS = 10 V RDS(ON) = 33 mΩ @ VGS = 4.5 V ■ Fast switching ■ Low gate charge ■ High performance trench technology for extremely low Rdson

Contextual Info: FDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimized on-state resistance and yet maintain

100TB

Abstract: 2SK2691-01R DIODE SJ 98
Contextual Info: FU JI 2SK2691-01R N-channel MOS-FET FAP-IIIB Series 60V > Features - 0 ,0 1 Q 70 A 100W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated T O -3P F > Applications - Motor Control General Purpose Power Amplifier

Contextual Info: FDC655BN tm Single N-Channel, Logic Level, PowerTrench MOSFET 30 V, 6.3 A, 25 mΩ Features General Description „ Max rDS on = 25 mΩ at VGS = 10 V, ID = 6.3 A This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process

Contextual Info: FDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET 30 V, 6.3 A, 25 mΩ Features tm General Description ̈ Max rDS on = 25 mΩ at VGS = 10 V, ID = 6.3 A This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process

2SK 1110

Abstract: hd1-M -DC5V
Contextual Info: 2 S K 1 8 1 7 -M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET _ TTT - r - l l i • Features ^ S E R I E S Outline Drawings • High current • Low no-resistance

Contextual Info: ADVANCED POWER TECHNOLOGY MTE O D M o s □ a s ? ^ D 1O ' POWER MOS IV _ oooosdg ?as mAVP A d va n c ed POWER -T-3PI-1S Te c h n o lo g y APT1002RAN 1000V 6.0A 2.00 Q APT902RAN 900V 6.0A 2.00 Q APT1002R4AN 1000V 5.5A 2.40 Q APT902R4AN 900V 5.5A 2.40 Q

transistor 5GW

Abstract: 221A-06 AN569 MTP6N10 T3B5 75S4
Contextual Info: MOTOROLA SC XSTRS/R F bflE D • b3b7E5i+ DücJflbfl4 TGO ■ M O T b MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe c t T ra n s is to r N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 6 AMPERES RDS{on) = 0 8

TOP256YN

Abstract: top258 top253 TOP255 TOP262 top256 top252 transistor KPS 92 TOP257 TO-220-7C
Contextual Info: TOP252-262 TOPSwitch-HX Family ® Enhanced EcoSmart , Integrated Off-Line Switcher with Advanced Feature Set and Extended Power Range Product Highlights Lower System Cost, Higher Design Flexibility • Multi-mode operation maximizes efficiency at all loads

top258pn ic Diagram

Abstract: top*254 en top253 TOP261YN TOP256PN
Contextual Info: TOP252-262 TOPSwitch-HX Family Enhanced EcoSmart™, Integrated Off-Line Switcher with Advanced Feature Set and Extended Power Range Product Highlights Lower System Cost, Higher Design Flexibility • Multi-mode operation maximizes efficiency at all loads

Contextual Info: TOP252-262 TOPSwitch-HX Family ® Enhanced EcoSmart , Integrated Off-Line Switcher with Advanced Feature Set and Extended Power Range Product Highlights Lower System Cost, Higher Design Flexibility • Multi-mode operation maximizes efficiency at all loads

transistor KPS 92

Abstract: TOP255 TOP252 TOP262 TOP256YN top256 TOP254PN TOP252-262 top 258 TOP258
Contextual Info: TOP252-262 TOPSwitch-HX Family ® Enhanced EcoSmart , Integrated Off-Line Switcher with Advanced Feature Set and Extended Power Range Product Highlights Lower System Cost, Higher Design Flexibility • Multi-mode operation maximizes efficiency at all loads

Contextual Info: I . I» I Provisional Data Sheet No. PD 9 .1 292B International l R Rectifier HEXFET PO W ER M O S FE T IRFY440CM N-CHANNEL Product Summary 500 Volt, 0.85Î2 H E X F E T HEXFET technology is the key to International Rectifier’s advanced line of power M O SFET transistors. The effi­

17N55

Abstract: MOSFET 17N60 17N60 IXTM17N55 IXTH17N60
Contextual Info: IDE I X Y S CORP D I 4t>ôt>22t, 0 0 00 3M b I r - 5 ? - / r MegaMOS'“ FETs n ix Y S IXTH17N60, 55 IXTM17N60, 55 MAXIMUM RATINGS Sym. IXTH17N55 IXTM17N55 IXTH17N60 IXTM17N60 Unit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (Rg s = 1-OMfl) (1)

16 pin ic 3810

Abstract: CS-3810DW20 220V ac to 9V dc converter circuit smps control ic 393 buck pfc 220v ac to 9v dc converter buck converter 110v to 100 CS-3810N20 1.5V supply voltage smps 220v AC to 110v AC using resistor circuit diagram
Contextual Info: Power Factor Correction Features Description The CS-3810 allows an AC to DC con­ verter to draw power at near unity power factor by employing hysteretic current mode control. The IC's exter­ nally programmable hysteresis con­ trols the converter's switching

Contextual Info: Semiconductor, Inc. TC96C55 3A OUTPUT PROGRAMMABLE POWER OSCILLATOR FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC96C555 Power Oscillator is an easily pro­ grammed IC that can be used in simple switch-mode power supplies, diode doublers and inverters, and similar circuits

PD9823

Contextual Info: Data Sheet No. PD-9.823A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7360 IRHM836Q ;n N-CHANNEL MEGA RAD HARD 400 Volt, 0.22 Q, MEGA RAD HARO HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs

S4 56a SMD diode

Abstract: smd transistor 56B TOP250 TOP242-250 smd diode s6 64a transformer for top250 capacitor 336 35K 102 smd diode S4 64a TOP244 TOP243 equivalent
Contextual Info: TOP242-250 TOPSwitch-GX Family Extended Power, Design Flexible, ® EcoSmart, Integrated Off-line Switcher Product Highlights Lower System Cost, High Design Flexibility • Extended power range for higher power applications • No heatsink required up to 34 W using P/G packages

IC TOP246

Abstract: smd transistor 56B TOP242-250 Diode smd s6 63A TOP244 TOP245 PN transistor equivalenT MBR20100 capacitor 336 35K 102 pin DIAGRAM OF DIP8 TOP 244 PN IN645
Contextual Info: TOP242-250 TOPSwitch-GX Family Extended Power, Design Flexible, ® EcoSmart, Integrated Off-line Switcher Product Highlights Lower System Cost, High Design Flexibility • Extended power range for higher power applications • No heatsink required up to 34 W using P package

TOP250Y

Abstract: IC TOP246 pin DIAGRAM OF DIP8 TOP 244 PN rms 600 watt mosfet schematic transformer for top249 TOP245 transformer for top250 Diode smd s6 63A smd transistor 56B two pin diode SMD 54a
Contextual Info: TOP242-250 TOPSwitch-GX Family Extended Power, Design Flexible, ® EcoSmart, Integrated Off-line Switcher Product Highlights Lower System Cost, High Design Flexibility • Extended power range for higher power applications • No heatsink required up to 34 W using P package

2561 optocoupler

Abstract: S4 56a SMD diode LIGHT LASER DIODE SAMSUNG 1N4148 SMD PACKAGE 2561 opto TOP244 n transformer for top250 Three-terminal Off-line PWM Switch Diode smd s6 63A TOP250
Contextual Info: TOP242-250 TOPSwitch-GX Family Extended Power, Design Flexible, ® EcoSmart, Integrated Off-line Switcher Product Highlights Lower System Cost, High Design Flexibility • Extended power range for higher power applications • No heatsink required up to 34 W using P package

S4 56a SMD diode

Abstract: smd diode S6 58a Diode smd s6 54A smd diode S4 56a smd diode S4 58a
Contextual Info: TOP242-250 TOPSwitch-GX Family Extended Power, Design Flexible, ® EcoSmart, Integrated Off-line Switcher Product Highlights Lower System Cost, High Design Flexibility • Extended power range for higher power applications • No heatsink required up to 34 W using P/G packages