55C 16V Search Results
55C 16V Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| AMC1306M25EDWVR |
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Reinforced isolated modulator with -55C extended temperature range 8-SOIC -55 to 125 |
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| TPS62812MWRWYR |
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2.75-V to 6-V, 2-A step-down converter in a 2-mm x 3-mm QFN package with -55C extended temperature 9-VQFN-HR -55 to 150 |
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| TPS62813MWRWYR |
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2.75-V to 6-V, 3-A step-down converter in a 2-mm x 3-mm QFN package with -55C extended temperature 9-VQFN-HR -55 to 150 |
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| TPS62810MWRWYR |
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2.75-V to 6-V, 4-A step-down converter in a 2-mm x 3-mm QFN package with -55C extended temperature 9-VQFN-HR -55 to 150 |
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| TPS62811MWRWYR |
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2.75-V to 6-V, 1-A step-down converter in a 2-mm x 3-mm QFN package with -55C extended temperature 9-VQFN-HR -55 to 150 |
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55C 16V Price and Stock
Others ZMM55C16V-HTINSTOCK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ZMM55C16V-HT | 8,239 |
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Get Quote | |||||||
55C 16V Datasheets Context Search
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Contextual Info: Organic Conductive Polymer Al. E. Capacitors OCVU Series: Surface Mount,125°C FEATURES •125°C, 2,000 hours assured. •Ultra Low ESR • RoHS Compliance SPECIFICATIONS Items Operating Temperature Range Capacitance Tolerance Performance -55C ~ +125°C +20% at 120Hz, 20°C |
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120Hz, V-16V: 000Hrs C1CI05 | |
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Contextual Info: BUK6228-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been |
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BUK6228-55C | |
BUK6210-55CContextual Info: BUK6210-55C N-channel TrenchMOS intermediate level FET Rev. 2 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been |
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BUK6210-55C BUK6210-55C | |
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Contextual Info: BUK6210-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 7 September 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been |
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BUK6210-55C | |
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Contextual Info: BUK6228-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been |
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BUK6228-55C | |
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Contextual Info: BUK662R7-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 7 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been |
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BUK662R7-55C | |
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Contextual Info: BUK6210-55C N-channel TrenchMOS intermediate level FET Rev. 2 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been |
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BUK6210-55C | |
BUK6217-55CContextual Info: BUK6217-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 21 September 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been |
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BUK6217-55C BUK6217-55C | |
1060 fetContextual Info: BUK6E3R2-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 6 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been |
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BUK6E3R2-55C 1060 fet | |
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Contextual Info: BUK6E3R2-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 6 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been |
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BUK6E3R2-55C | |
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Contextual Info: BUK653R2-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 6 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been |
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BUK653R2-55C | |
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Contextual Info: BUK653R2-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 6 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been |
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BUK653R2-55C | |
buk662r7Contextual Info: BUK662R7-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 7 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been |
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BUK662R7-55C buk662r7 | |
MiFare DESFIreContextual Info: BUK653R5-55C N-channel TrenchMOS intermediate level FET Rev. 1 — 27 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been |
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BUK653R5-55C MiFare DESFIre | |
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Contextual Info: BUK653R5-55C N-channel TrenchMOS intermediate level FET Rev. 1 — 27 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been |
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BUK653R5-55C | |
BUK6217-55CContextual Info: DP AK BUK6217-55C N-channel TrenchMOS intermediate level FET Rev. 3 — 9 July 2012 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been |
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BUK6217-55C BUK6217-55C | |
BUK6217-55CContextual Info: DP AK BUK6217-55C N-channel TrenchMOS intermediate level FET Rev. 3 — 9 July 2012 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been |
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BUK6217-55C BUK6217-55C | |
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Contextual Info: D2 PA K BUK6C2R1-55C N-channel TrenchMOS intermediate level FET Rev. 2 — 21 December 2011 Preliminary data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and |
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BUK6C2R1-55C | |
BUK6C2R1-55CContextual Info: D2 PA K BUK6C2R1-55C N-channel TrenchMOS intermediate level FET Rev. 3 — 18 January 2012 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and |
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BUK6C2R1-55C BUK6C2R1-55C | |
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Contextual Info: D2 PA K BUK663R5-55C N-channel TrenchMOS intermediate level FET Rev. 2 — 23 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been |
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BUK663R5-55C | |
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Contextual Info: D2 PA K BUK663R5-55C N-channel TrenchMOS intermediate level FET Rev. 2 — 23 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been |
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BUK663R5-55C | |
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Contextual Info: D2 PA K BUK6C2R1-55C N-channel TrenchMOS intermediate level FET Rev. 3 — 18 January 2012 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and |
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BUK6C2R1-55C | |
transistor C017
Abstract: HMC-C017
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HMC-C017 HMC-C017 231CCSF transistor C017 | |
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Contextual Info: HMC-C017 v00.0905 WIDEBAND LNA MODULE, 17 - 27 GHz AMPLIFIERS - CONNECTORIZED MODULES 16 Features Noise Figure: 2.75 dB Gain: 18 dB P1dB Output Power: +14 dBm 50 Ohm Matched Input/Output Regulated Supply: Vs = +8V to +16V Typical Applications Hermetically Sealed Module |
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HMC-C017 HMC-C017 231CCSF | |