55MOHM Search Results

inductor 100uH

Abstract: capacitor 104 ceramic 10uf 25V capacitor CAPACITOR 0805 RESISTOR 1210 ceramic capacitor 104 Si9435DY 104 ceramic capacitor EP05Q03L Ceramic Capacitors 104
Contextual Info: Server +12V INPUT 1 C1 0.47uF 2 R2 10k C2 27nF VL EXT MAX1846 3 C3 220pF 4 CS 8 COMP PGND REF FB GND 5 P1 Si9435DY 55mOhm 9 FREQ R1 150k 300kHz C4 0.1uF 1846-12b RWY 08/10/01 10 V+ C5 10uF 25V CER 7 6 L1 100uH DS5022P -104 D1 EP05 Q03L R3 0.1 0.25W R4 97.6k

magnetic amplifier saturable core

Abstract: L6561 application note L6561 AN966 bc337 pin out diagram circuit diagram of mosfet based smps power supply computer smps circuit diagram L6561 application magnetic-amplifier desktop computer smps circuit diagram smps transformer design
Contextual Info: AN1007 APPLICATION NOTE L6561 - BASED SWITCHER REPLACES MAG AMPS IN SILVER BOXES by Claudio Adragna Mag amps a contraction of "Magnetic Amplifier" are widely used in multi-output switching power supplies to get auxiliary regulated power rails. However, they are expensive, bulky, and require a

kb3925

Abstract: isl6262acrz EC-IT8752 pc817 s6 Asus RTL8111C-GR sr7012 asus schematic diagram intel GM45 cantiga asus f3s
Contextual Info: 4 3 Reset 2 Off Button PWRGD DOWN CPU, VGA Thermal OVERT# FORCE_OFF# Circuit Daughter Board EC_RST# PWR_SW# 2 D AC_BAT_SYS +5VA +3VA 1 3 6 Power On SWITCH EC KB3925 5 PM_RSMRST# VSUS_ON ICH9-M VRMPWRGD C SUSC_EC# From EC 9 +12V +5V +3V +1.8V +1.5V +0.9V GMCH

SC452IMLTRT

Abstract: BA59-01900A SADP-90FH BA92-04460A TM-00379-003 UL1571 AWG28 BA61-00631A BA44-00233A 7SZ08 BA59-01724A
Contextual Info: - This Document can not be used without Samsung's authorization - 5. Exploded View and Part List SYSTEM T0010 I0006 T0001 I0001 M3005 G0011 W3007 X2000 T2004 I0009 M0001 G3004 G0003 I0002 B0001 B0013 I0005 B0003 B0150 B0100 5-1 D0001 - This Document can not be used without Samsung's authorization -

K0301

Abstract: b154ew02 BA81-01824A BA92-04308A BA68 BA59-01557A TM61 BA96-02838A BA44-00211A DAC-09N014
Contextual Info: This Document can not be used without Samsung’s authorization. 6. MECHANICAL EXPLODED VIEW AND PARTLIST 6-1 System Overall Exploded View K0007 I0003 K1001 K4001 K0001 K0002 K0102 K1002 K4002 K0101 K1003 K0201 L1007 K0101 T4001 T4002 I0006 I0001 W0101 B0004

Contextual Info: OxiCapTM NOS Low ESR Series Niobium Oxide Capacitor A KYOCERA GROUP COMPANY CASE DIMENSIONS: millimeters inches NOS Low ESR series of OxiCapTM niobium oxide capacitors have been developed in order to offer significant Cost versus Performance value as the key

din 5901 rails

Abstract: MCMurdo 801 DPAF GASKET s1854 microdot 10-32 female connector ZDB25P1AKN SS-60300-010 IEC-1076-4-101 DB-25S-A191 RJ11 6p4c
Contextual Info: 1797 Technical portal and online community for Design Engineers - www.element-14.com Connectors - Signal & Data Page 1875 1829 1856 1843 1854 1877 1827 1825 1811 1805 1798 1821 1821 1826 1812 1814 1801 1817 1802 1817 1810 1803 1819 1804 1797 1811 DIN41612 Class 1, 2 and 3 . . . . . . . . . . . . . . . . . .

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

SOP-23

Abstract: 5.8A, 25V, N Channel MOSFET SOP-23-3L switching TRANSISTOR mosfet 30V 40A n channel enhancement MOSFET STN3400 42m-ohm n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR N-Channel, 30V, 4.0A, Power MOSFET
Contextual Info: N Channel Enhancement Mode MOSFET STN3400 5.8A DESCRIPTION The STN3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These

mosfet 40a 12v

Contextual Info: N Channel Enhancement Mode MOSFET ST3414 4.0A DESCRIPTION The ST3414 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

GOLD CAP 2.5V 3.3F

Abstract: 108-0740-001 emerson BOM lmp8646 supercap application LMP8646EB panasonic supercap
Contextual Info: LMP8646EB User’s Guide User’s Guide LMP8646EB – Nov. 2011 – Revised Nov. 2011 LMP8646EB Figure 1 – LMP8646EB The LMP8646 Evaluation Board LMP8646EB is designed to ease evaluation and design-in of Texas Instruments’ LMP8646, a Precision Current Limiter. The LMP8646 is used to detect small differential

LTC3615IUF

Abstract: QFN-24 LTC3615 LTC3615EFE LTC3615EUF LTC3615IFE DSASW0034716
Contextual Info: News Release ⎜ www.linear.com General Purpose Dual 3A, 4MHz, Synchronous Step-Down Regulator Also Supports DDR Memory MILPITAS, CA – May 3, 2010 – Linear Technology introduces the LTC3615, a high efficiency, 4MHz synchronous buck regulator that incorporates a constant frequency, current-mode

KB3910SF

Abstract: EPSON C691 MAIN g792 kb 3910 wistron G709T1U foxconn MAX1909 K29 mosfet epson t13 circuit diagram
Contextual Info: 5 4 3 2 1 W37 Block Diagram 04241-SA PCB Layer Stackup D 200-PIN DDR SODIMM CLK GEN IDT CV137 ICS951419 CY28RS480 AMD CPU DDR 333/400 DDR x2 Sempron K8 3 8,9,10 4,5,6,7 SVIDEO/COMP HyperTransport 6.4GB/S 16b/8b TV OUT16 MAX1909ETI LVDS ATI LCD PCI Express x16

w76l

Abstract: 9m50
Contextual Info: Mai nSyst em Opt i on SECCode Loc at i on Name Descr i pt i on Uni t I C0902002197 T7300 2. 0GHz CPU MI CROPROCESSOR; LF80537GG0414M, 2. 0GHz, uFCPGA, 479P, TR, PLASTI C, 1. 05V, 34W, 0t o+10 PC 0C, 4MB, Mer om T7300, FSB800, 4M I CDRAM MODULE; M470T6554,

Contextual Info: - Thi s Documentcan notbe used wi thoutSamsung' s authori zati on - 10. PartList 1 Main Board Main Board Location SEC Code Name Specification Quantity B504 3301-000314 BEAD-SMD 120ohm,1.6x0.8x0.8mm,-,-,- 1 B510 3301-000314 BEAD-SMD 120ohm,1.6x0.8x0.8mm,-,-,-

C1093

Abstract: SLD9630TT C1079 2007-000162 BA68-40012N C1061 npn 470nF 50V X7R ics954 C347 C558 npn
Contextual Info: 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다. This Document can not be used without Samsung's authorization. 10.자재 리스트 10-1. Main Board X25 / X20(EXT Item No Design LOC Parts name Spec 0201-001002

DS493

Contextual Info: Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 11. Mai n System PartLi st CODE DESCRI PTI ON REFERENCE EA 3920501 j ack-usb-4p-mnt4,JACK-USB;-,-,-,-,- J505 J2501 J2502 3 0401-000191 di ode,DI ODE-SWI TCHI NG;MMBD4148,75V,200MA,SOT-23,TP

UPEK

Abstract: tantalum polymer 104uf TANTALUM capacitor D330 transistor DC/DC to ac converter 10TPA100M NOSD337M004R0100 36mO d330 capacitor 104uf
Contextual Info: Polymer or OxiCapTM for DC converter? A KYOCERA GROUP COMPANY TANTALUM DIVISION GENERAL DESCRIPTION Tantalum polymer capacitor technology is often used on output of DC/DC converters as low ESR and non ignition failure mode solution. New niobium oxide capacitor OxiCapTM can be

desktop computer smps circuit diagram

Abstract: magnetic amplifier saturable core Saturable L6561 L6561 AN schematic diagram regulator 12v dc BC337 L6561 application note L6561 AN966 BC337-10
Contextual Info: AN1007 APPLICATION NOTE L6561 - BASED SWITCHER REPLACES MAG AMPS IN SILVER BOXES by Claudio Adragna Mag amps a contraction of ”Magnetic Amplifier” are widely used in multi-output switching power supplies to get auxiliary regulated power rails. However, they are expensive, bulky, and require a

Contextual Info: OxiCapTM NOS Low ESR Series Niobium Oxide Capacitor A KYOCERA GROUP COMPANY CASE DIMENSIONS: millimeters inches NOS Low ESR series of OxiCapTM niobium oxide capacitors have been developed in order to offer significant Cost versus Performance value as the key

STP2341

Abstract: sot-23 P-Channel MOSFET mosfet vgs 5v P-Channel 1.8V MOSFET P-Channel MOSFET code AS SOP-23
Contextual Info: P Channel Enchancement Mode MOSFET STP2341 -3.3A DESCRIPTION The STP2341 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance.

ST3401

Abstract: TRANSISTOR mosfet 30V 40A sot-23 P-Channel MOSFET P-Channel MOSFET 12V SOT 23 P channel MOSFET 40A a1ya MOSFET P channel SOT-23 MOSFET P-channel SOT-23 TRANSISTOR mosfet 40A p channel power trench mosfet
Contextual Info: P Channel Enhancement Mode MOSFET ST3401 -4.0A DESCRIPTION The ST3401 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance.

chn 825

Abstract: venice 6.2 ADP-60ZH BA61-01108A BA92-04518 chn 610 BA59-01953A venice 6.5 HAINAN2 BA46-03755A
Contextual Info: - This Document can not be used without Samsung's authorization - 6. Exploded View and Part List SYSTEM T0010 I0006 T0001 I0001 M3005 G0011 W3007 X2000 T2004 I0009 M0001 M3004 G0003 I0002 B0001 B0013 I0005 B0003 D0001 B0150 B0100 6-1 NP-R20/R21 - This Document can not be used without Samsung's authorization -

samsung R540 service

Abstract: AR2413 10029a 2402-001144 LTM170EX R40PLUS BA99-10026A HP100-C30N-N15 M170EU01 C547 smd
Contextual Info: 10. Electrical Part List Main System Parts Code Location XP_HOME,W/O_BA G 6801-001239 WARRANTY 6801-001535 E-BOOK COUPON BA46-05935A S/W Media BA46-05530A OS CD BA68-03737A OS Manual BA81-00991A MOUSE PAD Part Name BA44-00215A Lishin-90W ASSY ACCESSORYXP_HOME