55N03 Search Results

55N03L

Abstract: 55n03
Contextual Info: S DP /B 55N03L May,2004 ver1.1 S amHop Microelectronics C orp. N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S ID R DS on F E AT UR E S ( m W ) Max High power and current handling capability. 14 @ V G S = 10V

55n03

Abstract: 55N03L
Contextual Info: S DP /B 55N03L S eptember , 2002 S amHop Microelectronics C orp. N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S ID R DS on F E AT UR E S ( m W ) TYP High power and current handling capability. 12.5 @ V G S = 10V

55N03L

Abstract: 55N03
Contextual Info: 55N03L S eptember , 2002 N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S ID R DS on F E AT UR E S ( m W ) TYP High power and current handling capability. 12.5 @ V G S = 10V 30V S uper high dense cell design for extremely low R DS (ON).

MOSFET 55N03

Abstract: 55n03
Contextual Info: TAIW AN s 55N03 SEMICONDUCTOR 25V N-Channel MOSFET bl RoHS CO M PLIANCE TO-252 PRODUCT SUM M ARY Pin Definition; 1. Gate V DS V 2. Drain 3. Source 25 R os^m O ) I d (A) 6 @ Vc s = 1ÛV 30 9 @ V<;s z 4.5V 30 1 2 3 Features Block Diagram ♦ Advance Trench Proce s s Tech no logy

NEC TRANSISTOR MARKING CODE

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 55N03SUG SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 55N03SUG is N-channel MOS Field Effect PART NUMBER LEAD PLATING T.B.D. Pure Sn Tin PACKING PACKAGE Tape TO-252(MP-3ZK)

55N03

Abstract: NP55N03SUG NP55N03SUG-E1-AY MOS FIELD EFFECT TRANSISTOR
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 55N03SUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 55N03SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 55N03SUG-E1-AY Note

Contextual Info: 55N03 55A, 25V, RDS ON 6mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The 55N03 provide the designer with the best combination of fast switching,ruggedized device design,

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

55N03

Abstract: NP55N03SUG
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

npn transistor bc148 datasheet

Abstract: pin configuration NPN transistor BC147 BC148 pin configuration BC157 DATA SHEET npn transistor smd w19 pin configuration NPN transistor BC148 DATASHEET OF TRANSISTOR BC158 TRANSISTOR BC135 TRANSISTOR BC147 jog image bc159 npn switching transistor
Contextual Info: R Intel 810E2 Chipset Platform Design Guide January 2001 Document Number: 298248-001 ® Intel 810E2 Chipset Platform R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual

55n03

Abstract: MOSFET 55N03 ir 55n03 MTN55N03J3 DSA006750
Contextual Info: Spec. No. : C411J3 Issued Date : 2007.07.05 Revised Date : 2009.02.04 Page No. : 1/7 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET 55N03J3 BVDSS ID RDSON 25V 55A 6mΩ Features • Dynamic dv/dt Rating • Simple Drive Requirement • Repetitive Avalanche Rated

MOSFET 55N03

Contextual Info: TAIW AN s 55N03 SEMICONDUCTOR 25V N-Channel MOSFET bl RoHS CO M PLIANCE TO-252 PRODUCT SUM M ARY Pin D efinition; 1. Gate 2. Drain 3. Source & V DS V R os^m O ) Id (A) 6 @ V cs = 1 û V 30 9 @ V<;s z 4.5V 30 25 1 2 3 Features Block Diagram ♦ A dvance Trench Proce s s T ech n o logy

kc-1206

Abstract: manual FW82801BA motherboard cd 75232 INTEL FW82801BA manual Intel 815 FW82815 INTEL FW82801BA motherboard schematic diagram motor control MC60 manual intel chipset fw82801ba ABIT-SL30 bc227
Contextual Info: Intel 815E Scalable Performance Board Development Kit Manual April 2001 Order Number: 273432-003 Information in this document is provided in connection with Intel® products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of Sale for such products, Intel assumes no liability

55N03

Abstract: MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR d1832 NP55N03SUG NP55N03SUG-E1-AY NEC to-252 marking information
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 55N03SUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 55N03SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 55N03SUG-E1-AY Note